The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional de...The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 ×10^-5 A/cm2.展开更多
In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field dist...In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.展开更多
基金Project supported by the Science and Technology Foundation of Hunan Province of China (Grant No. 2008FJ3102)
文摘The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 ×10^-5 A/cm2.
基金Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration,China(Grant No.JCYJ20160226192639004)the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment,China(Grant No.JCYJ20170412153356899)the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT,China(Grant No.2017A050506002)
文摘In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
