Ternary compounds and solid-state phase equilibria in Mg-rich side of Mg-Zn-Ca system at 300 ℃

The phase equilibria and compositions in Mg-rich side at 300 ℃ were investigated in Mg-Zn-Ca ternary system through the equilibrated alloy method by using scanning electron microscopy,electron probe microanalysis,X-ray diffraction and transmission electron microscopy.The results show that two ternary compounds T1 and T2 can be in equilibrium with the Mg-based solid solution in Mg-Zn-Ca system.T1 phase is a linear compound with the composition region（molar fraction） of 15% Ca,20.5%-48.9% Zn and balanced Mg at 300 ℃.Its hexagonal structure parameters decrease with increasing Zn content,i.e.a=0.992-0.945 nm,c=1.034-1.003 nm.T2 phase has hexagonal structure with the composition region of 26.4%-28.4% Mg,63.2%-65.5% Zn and 7.1%-8.4% Ca.At 300 ℃,the solubility of Zn in the Mg-based solid solution increases for the addition of Ca,the maximum solubility of Zn is 3.7%.Three-phase fields consisting of--Mg＋Mg2Ca＋T1,--Mg＋T1＋T2,--Mg＋T2＋MgZn and MgZn＋T2＋Mg2Zn3 exist in the Mg-Zn-Ca system at 300 ℃.

Topological Dirac surface states in ternary compounds GeBi_(2)Te_(4),SnBi_(2)Te_(4) and Sn_(0.571)Bi_(2.286)Se_(4)

Using high-resolution angle-resolved and time-resolved photoemission spectroscopy,we have studied the low-energy band structures in occupied and unoccupied states of three ternary compounds GeBi_(2)Te_(4),SnBi_(2)Te_(4) and Sn_(0.571)Bi_(2.286)Se_(4) near the Fermi level.In previously confirmed topological insulator GeBi_(2)Te_(4) compounds,we confirmed the existence of the Dirac surface state and found that the bulk energy gap is much larger than that in the first-principles calculations.In SnBi_(2)Te_(4) compounds,the Dirac surface state was observed,consistent with the first-principles calculations,indicating that it is a topological insulator.The experimental detected bulk gap is a little bit larger than that in calculations.In Sn_(0.571)Bi_(2.286)Se_(4) compounds,our measurements suggest that this nonstoichiometric compound is a topological insulator although the stoichiometric SnBi_(2)Se_(4) compound was proposed to be topological trivial.

PtCoNi ternary intermetallic compounds anchored on Co,Ni and N co-doped mesoporous carbon:Synergetic effect between PtCoNi nanoparticles and doped mesoporous carbon promotes the catalytic activity

Highly active and robust electrocatalysts are desired for proton exchange membrane fuel cells.Pt-based intermetallic compounds(IMCs) have been recognized as one of the most promising low-platinum catalysts for fuel cells(FCs).Herein,we report a high-performance IMCs by anchoring ordered PtCoNi ternary nanoparticles on the N,Co and Ni co-doped dodecahedral mesoporous carbon(DMC).While the introduced Co and Ni participate in the formation of PtCoNi IMCs,some of them are doped in the mesoporous carbon and coordinated by N to form Co-N_(y)/Ni-N_(z)dual active centers,which further enhances the electrocatalytic activity towards oxygen reduction reaction.Moreover,the addition of Ni results in a negative shift of the d-band center of Pt as compared to the Pt/DMC and Pt_(3)Co/DMC,making it easier to adsorb oxygen on the surface.As expected,our optimal sample Pt_(3)Co_(0.7)Ni_(0.3)/DMC exhibits excellent performance with mass activity and specific activity of 1.32 A mgPt-1and 1.98 mA cm^(-2)at 0.9 V,which are 7.33and 6.19 times that of commercial Pt/C,respectively.The Pt_(3)Co_(0.7)Ni_(0.3)/DMC also reveals much better cathodic performance in an H2-air single fuel cell than commercial Pt/C catalyst with a power density of0.802 W cm^(-2).This work provides critical sights into constructing efficient catalysts by ternary intermetallic strategy and synergetic effect between active components and support.

Structures and Magnetic Properties of Europium-Transition Metal-Gallium Ternary Intermetallic Compounds with 1:3 Type

The crystal structures and magnetic properties of novel Eu TrGa3-r （T=Pd, It, Rh） in termetallic compounds are investigated by using powder x-ray diffraction and magnetic measurements. EuTrGa3-r crystallizes in orthorhombic structure with space group of Cmcm and Z = 4. There are four kinds of nonequivalent 4c crystal positions in EuTrGaa-r unit cell, which are occupied by 4Eu, 4GaⅠ, 4（GaⅡ, T） and 4GaⅢ, respectively. EuTrGa3-r ex- hibits the complex magnetic states in low-temperature regime, with the three-, two- and one-antiferromagnetic transitions occurring for T=Ir, T=Rh and T=Pd, respectively. It might be due to the Kondo effect： a localized antiferromagnetic interaction of the isolated impurity spins with the surrounding conduction electrons at low-temperature regime.

SYNTHESIS AND STRUCTURE OF SbNB_3(Se_2)_6, A NEW ONE-DIMENSIONAL TERNARY NIOBIUM SELLURIDE COMPOUND

SbNb_3(Se_2)_6, Mr=1347.99, tetragonal, P4/mnc,a=b=9.466(2),c=19.075(3) ,V=1709.0(4) ~3, z=4, Dm=5.2(2)g/cm^3, Dc=5.24g/c^3,λ(Moka)=0.71069 ,μ=287.39cm^(-1), F(000)=2328,T=276(1)k,R=5.9％,Rw=6.9％, for 479 unique observed reflections (1>3σ(1)).The structure is composed of [Nb3(Se2)s]∞ chains along the c axis with Sb atoms inserted between them.

A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate

In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitutional accepter and donor concentration up to NA=5.0×10^17 cm^-3 and ND=9.0×10^16 cm^-3 for deep ultraviolet lasing was achieved.The structure was assumed to be grown over bulk AIN substrate and operate under a continuous wave at room temperature.Although there is an emphasizing of the suitability for using boron nitride wide band gap in the deep ultraviolet region,there is still a shortage of investigation about the ternary BGaN in aluminum-rich AIGaN alloys.Based on the simulation,an average local gain in quantum wells of 1946 cm^-1,the maximum emitted power of 2.4 W,the threshold current of 500 mA,a slope efficiency of 1.91 W/A as well as an average DC resistance for the V-I curve of(0.336Ω)had been observed.Along with an investigation regarding different EBL,designs were included with tapered and inverse tapered structure.Therefore,it had been found a good agreement with the published results for tapered EBL design,with an overweighting for a proposed inverse tapered EBL design.

Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE

The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.

Numerical Simulation of the Multicomponent Mass Transfer during Bridgman Growth of CdZnTe Crystal Using Maxwell-Stefan Diffusion Model

To reveal the complicated mechanism of the multicomponent mass transfer during the growth of ternary compound semiconductors, a numerical model based on Maxwell-Stefan equations was developed to simulate the Bridgman growth of CdZnTe crystal. The Maxwell-Stefan diffusion coefficients in the melt were estimated. Distributions of Zn, Cd, and Te were calculated with variable ampoule traveling rate and diffusion coefficients. The experimental results show that Zn in melt near the growth interface decreases and diffuses from the bulk melt to the growth interface. For Cd, the situation is just the opposite. The coupling effects of Zn and Cd diffusions result in an uphill diffusion of Te at the beginning of the growth. Throughout the growth, the concentration of Te in the melt keeps low near the growth interface but high far from the growth interface. Increasing the ampoule traveling rate will aggravate the segregation of Zn and Cd, and hence deteriorate the uniformity of Te. We also find that not only the diffusion coefficients but also the ratios between them have significant influence on the species diffusions.

Design of novel NiSiAlY alloys in marine salt-spray environment:PartⅠ.Al-Si-Y and Ni-Si-Y subsystems

MCrAlY(M=Ni,Co,NiCo)alloys have been widely used as a bond layer for thermal barrier coatings(TBCs).However;oxides form discontinuously on MCrAlY surface in the marine environment since Cr_(2)O_(3)can react with NaCl and H_(2)O at temperatures above 500℃.Replacing Cr with other alloying elements(such as Si)might prevent severe salt-spray corrosion effectively.To save time and efforts in materials design of the Ni-Si-Al-Y system;we obtained the thermodynamic descriptions of the ternary compounds by coupling the CALPHAD(CALculation of PHAse Diagrams)approach and first-principles calculations.Seven and eighteen ternary compounds were evaluated and calculated in the Al-Si-Y and Ni-Si-Y systems;respectively.Phase diagrams of the two systems were depicted after a series of experimental Al/Ni-Si-RE(RE denotes rare earth elements,including La,Ce,Pr,Nd,Sm,Gd,Dy,Ho,and Er)systems being analyzed.It is found that the RE elements with the same reference states tend to form ternary compounds with the same crystal structures.The model-based descriptions are the basis for the research and development of novel NiSiAlY alloys in resisting high-temperature corrosion.

New materials and designs for 2D-based infrared photodetectors

Infrared photodetectors have attracted much attention considering their wide civil and military applications.Two-dimensional(2D)materials offer new opportunities for the development of costless,high-level integration and high-performance infrared photodetectors.With the advent of a broad investigation of infrared photodetectors based on graphene and transition metal chalcogenides(TMDs)exhibiting unique properties in recent decades,research on the better performance of 2D-based infrared photodetectors has been extended to a larger scale,including explorations of new materials and artificial structure designs.In this review,after a brief background introduction,some major working mechanisms,including the photovoltaic effect,photoconductive effect,photogating effect,photothermoelectric effect and bolometric effect,are briefly offered.Then,the discussion mainly focuses on the recent progress of three categories of 2D materials beyond graphene and TMDs.Noble transition metal dichalcogenides,black phosphorus and arsenic black phosphorous and 2D ternary compounds are great examples of explorations of mid-wavelength or even long-wavelength 2D infrared photodetectors.Then,four types of rational structure designs,including type-II band alignments,photogating-enhanced designs,surface plasmon designs and ferroelectric-enhanced designs,are discussed to further enhance the performance via diverse mechanisms,which involve the narrower-bandgap-induced interlayer exciton transition,gate modulation by trapped carriers,surface plasmon polaritons and ferroelectric polarization in sequence.Furthermore,applications including imaging,flexible devices and on-chip integration for 2D-based infrared photodetectors are introduced.Finally,a summary of the state-of-the-art research status and personal discussion on the challenges are delivered.

Structural and optical properties of Cd_(0.8)Zn_(0.2)S thin films

Cdl-xZnxS thin films were deposited on glass substrates by a vacuum coevaporation method. The structural, compositional, and optical properties of as-deposited Cdo.sZno.2S films were investigated using X-ray diffraction （XRD）, X-ray fluorescence （XRF）, X-ray photoelectron spectroscopy （XPS）, and optical transmittance spectrum. The thin films are hexagonal in structure, with strong preferential orientation along the （002） planes. The composition of Cdl-xZnx S thin films monitored by a quartz crystal oscillator agrees well with that obtained from XRF and XPS measurements. The optical constants, such as refractive index, single-oscillator energy, dispersion energy, absorption coefficients, and the optical band gap, were deduced by the Swanepoel＇s method, in combination with the Wemple and DiDomenico single-oscillator model, from the transmission spectrum of Cd0.8Zn0.2S thin films.