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Simulation of Dendritic Growth with Melt Convection in Solidification of Ternary Alloys 被引量:1
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作者 孙东科 张庆宇 +1 位作者 曹伟生 朱鸣芳 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第6期176-179,共4页
A cellular automaton-lattice Boltzmann coupled model is extended to study the dendritic growth with melt convection in the solidification of ternary alloys. With a CALPHAD-based phase equilibrium engine, the effects o... A cellular automaton-lattice Boltzmann coupled model is extended to study the dendritic growth with melt convection in the solidification of ternary alloys. With a CALPHAD-based phase equilibrium engine, the effects of melt convection, solutal diffusion, interface curvature and preferred growth orientation are incorporated into the coupled model. After model validation, the multi dendritic growth of the Al-4.0 wt%Cu-1.0 wt%Mg alloy is simulated under the conditions of pure diffusion and melt convection. The result shows that the dendritic growth behavior, the final microstructure and microsegregation are significantly influenced by melt convection in the solidification. 展开更多
关键词 Simulation of Dendritic Growth with melt Convection in Solidification of ternary Alloys
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Electrical Properties of GeTe-based Ternary Alloys 被引量:1
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作者 曹一琦 LI Zhigang +2 位作者 WU Jianbo HUANG Xiaohua ZHANG Shengnan 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2018年第2期472-475,共4页
Ge_(50-x)Sb_xTe_(50) and Ge_(50-x)Bi_xTe_(50) ternary alloys were synthesized by vacuum melting at 1273 K with the starting materials of Ge, Bi, Sb, and Te. The lattice structures were analyzed based on X-ray ... Ge_(50-x)Sb_xTe_(50) and Ge_(50-x)Bi_xTe_(50) ternary alloys were synthesized by vacuum melting at 1273 K with the starting materials of Ge, Bi, Sb, and Te. The lattice structures were analyzed based on X-ray diffraction patterns, which could all be indexed to R3m rhombic structure. Electrical properties measurements revealed that the Ge-Sb-Te ternary alloys were p-type semiconductors with high electrical conductivity of 4.5×10~5S?m^(-1) near room temperature. And the maximum electrical property was obtained at Ge_45Sb_5Te_50, with the power factor of 2.49×10^(-3)W?m^(-1)K^(-2) at 640 K. Due to the existence of secondary phases, the electrical conductivity of Ge-Bi-Te system was lower and Seebeck coefficient was higher comparing with those of Ge-Sb-Te system. 展开更多
关键词 thermoelectric materials melting ternary alloy GeTe thermoelectric property
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