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Thermodynamic analysis of manufacturing polysilicon from Si HCl_3,Si Cl_4 and H_2 被引量:1
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作者 李佩龙 王铁峰 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2015年第4期681-688,共8页
Production of polysilicon by chemical vapor deposition of SiHCI3 with a fluidized bed reactor is a competitive technology. As equilibrium conversion can be approached in a fluidized bed reactor, a reliable thermodynam... Production of polysilicon by chemical vapor deposition of SiHCI3 with a fluidized bed reactor is a competitive technology. As equilibrium conversion can be approached in a fluidized bed reactor, a reliable thermodynamic analysis is very important. However, inconsistent thermodynamic analysis results have been reported in the lit- erature. The present work studied the effects of thermodynamic data and species selection, and recommended that JANAF was the best Cp data source and the minimum set of species included the following eight species: H2, HCI, SiC[4, SiCl2, SiHCI3, SiH2CI2, SiH3C] and Si. Then, the influence of operating conditions on the equilibrium was studied. For the SiHC|3-H2 system, both the yield of silicon and selectivity to silicon reached their maximum at (up to 1100 ℃), and low pressure and high H2 feed ratio were of benefit for silicon production. For the SiHCI3- SiCI4-H2 system, silicon could be produced only at 900-1400 ℃, and reducing pressure and increasing H2 feed ratio enhanced the yield of silicon. Meanwhile, the operation map for zero net by-production of SiCI4 by directly recycling the produced SiCl4 was determined. 展开更多
关键词 ThermodynamicsPolysiliconFluidized bedTrichlorosilaneSilicon tetrachtoride
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