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Research on ZnO/Si heterojunction solar cells 被引量:1
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作者 Li Chen Xinliang Chen +2 位作者 Yiming Liu Ying Zhao Xiaodan Zhang 《Journal of Semiconductors》 EI CAS CSCD 2017年第5期62-72,共11页
We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO:B(B-doped ZnO) thin films deposited by metal-organic chemical vapor d... We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article.ZnO:B(B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition(MOCVD) are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications.We investigate the effects of thickness,buffer layer,ZnO:B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package.The energy conversion efficiency of the ZnO:B(n)/ZnO/c-Si(p) solar cell can achieve 17.16%(V(oc):675.8 mV,J(sc):30.24 mA/cm^2,FF:83.96%) via simulation.On a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells.The influences of growth temperature,thickness and diborane(B2H6) flow rates are also discussed.We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique.The obtained conversion efficiency reaches2.82%(V(oc):294.4 mV,J(sc):26.108 mA/cm^2,FF:36.66%). 展开更多
关键词 textured surface zno films p-type c-Si substrates MOCVD technique AFORS-HET software solar cells
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