The phenomenon of stochastic resonance in a single-mode laser system with an input periodical signal

Using the linear approximation method, we study a single-mode laser system driven by colored pump noise and quantum noise with coupling between the real and imaginary parts when the laser is operated well above threshold. The steady state mean intensity fluctuation C(0) and signal-to-noise ratio (SNR) are calculated. It is found that there is a maximum in SNR when there is a minimum in the fluctuation of laser system if the coupling coefficient between real and imaginary parts of the quantum noise equals zero.

THE PHENOMENON ON COLLAPSIBLE TUBE DISPLACEMENT OSCILLATION AND ITS THEORETICAL ANALYSIS

In this paper,the phenomenon on collapsible tube displacement oscillation,a new behavior of the collapsible tube puisatile flow has been studied.The experiments show that the collapsible tube,in which the flow is periodic puisatile in the upstream,will oscillate as a simple supported beam when it is collapsed to certain extent,and that if the tube is collapsed continue,this oscillation will tend to weak and completely disappear lastly.An analytical model corresponding to the collapsible tube displacement oscillation and its governed equations are set up from the experiment background.By analysing the model and solving the equations, the collapsible tube displacement oscillation pattern and the oscillation occurring or disappearing criterion are obtained.The results predicted by this study are in agreement with those observed from experiment phenomena.

A Literature Review on “Non- Marriage”: A Global Comparative Perspective

This paper presents a comprehensive analysis and comparison of the existing literature on the phenomenon of non-marriage or staying unmarried in Asian countries such as China,Japan,South Korea,and Singapore,as well as European and American countries such as Spain and the US,and explores the trends,characteristics as well as reasons behind such a phenomenon.Through analysis,the present study found that there is a growing trend of postponed marriage and parenthood as well as an increasing proportion of individuals who exhibit no enthusiasm towards matrimony or parenthood in the aforementioned countries.To some extent,non-marriage or postponed marriage has become a prevalent trend in developed countries and even some developing countries.Japan,South Korea,and several developed countries in Europe and America have exhibited this phenomenon since the middle to late 20th century,with a relatively long history.The emergence of this phenomenon in China,Malaysia,the Philippines,and other developing countries in Asia,however,was relatively late,exhibiting a gradual development process.The current marriage landscape in China is characterized by a growing number of non-marriage individuals and a significant level of marital stability.In terms of reasons for staying unmarried,the marriage rates in the aforementioned countries can be attributed to various factors at macro,meso,and micro levels.In China,the phenomenon of non-marriage is closely associated with a range of factors,including diverse values and attitudes towards romance and marriage,marriage squeeze,education expansion,and the rise in females’economic and social status.The emphasis in future research should be placed on predicting the phenomenon of non-marriage,with a specific focus on exploring the reasons for advocating non-marriage,examining the internal mechanisms underlying this phenomenon,analyzing the consequences of non-marriage,and proposing corresponding countermeasures while establishing the public identity towards marriage.

Simulating and modeling the breakdown voltage in a semi-insulating GaAs P^+N junction diode

This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P＋N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region （SCR） and that is the trap density donor and acceptor states. The carrier crossing the space charge region （SCR） of W thickness creates N electron-hole pairs： for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region （SCR） by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I（V） current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions （1） and （3）, the current thermal generation in the region （2）, the leakage current in the surface, and the breakdown voltage.