the Rotterdam rules has made several changes in the carrier＇ s liability basis： to new refinement and classification of transport subject, responsibility foundation uses the presumption of fault pattern completely, ...the Rotterdam rules has made several changes in the carrier＇ s liability basis： to new refinement and classification of transport subject, responsibility foundation uses the presumption of fault pattern completely, and extends the carrier＇ s liability to ＂door to door＂ , during the extension of airworthiness an obligation, we make correction to transport law more than traditional exceptions to further improve the limitation of liability of the carrier, aiming at the carder part of the obligation we introduce the principle of freedom of contract.展开更多
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
文摘the Rotterdam rules has made several changes in the carrier＇ s liability basis： to new refinement and classification of transport subject, responsibility foundation uses the presumption of fault pattern completely, and extends the carrier＇ s liability to ＂door to door＂ , during the extension of airworthiness an obligation, we make correction to transport law more than traditional exceptions to further improve the limitation of liability of the carrier, aiming at the carder part of the obligation we introduce the principle of freedom of contract.
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
