1-Substituted- 4-trimethylsilylcyclohex- 3-enol and 1-substituted- 4-trimetnylsilyl-cyclohexanol, 4-trimethylsilylcyclohex-3-enol and 4-trimethylsilylcyclohexanol, and some of their esters and carbon counterparts were...1-Substituted- 4-trimethylsilylcyclohex- 3-enol and 1-substituted- 4-trimetnylsilyl-cyclohexanol, 4-trimethylsilylcyclohex-3-enol and 4-trimethylsilylcyclohexanol, and some of their esters and carbon counterparts were synthesized. Structures of the nineteen new compounds were determined by 1H NMR, IR and MS. Their odors are evaluated.展开更多
An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the cry...An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.展开更多
The refractory raw materials used in recent years were introduced,including metal and intermetallic compounds（ aluminum,silicon,ferrosilicon,etc.）,nonoxide raw materials（ Si3N4 and ferrosilicon nitride）.The develo...The refractory raw materials used in recent years were introduced,including metal and intermetallic compounds（ aluminum,silicon,ferrosilicon,etc.）,nonoxide raw materials（ Si3N4 and ferrosilicon nitride）.The developmental tendency of China＇s raw refractories in the future was also discussed.展开更多
The technology of preparing reaction burning silicon carbide (RBSC) by replacing SiC/C with entirely carbonaceous raw materials is investigated. Experimental results show the predominant factors of successfully prepar...The technology of preparing reaction burning silicon carbide (RBSC) by replacing SiC/C with entirely carbonaceous raw materials is investigated. Experimental results show the predominant factors of successfully preparing RBSC are as following:strictly controlling the porosity and pore diameter of biscuit, obtaining ideal carbon network permeating of Si and completely reaction between Si and beta-SiC.展开更多
基金Supported by the National Natural Science Foundation of China
文摘1-Substituted- 4-trimethylsilylcyclohex- 3-enol and 1-substituted- 4-trimetnylsilyl-cyclohexanol, 4-trimethylsilylcyclohex-3-enol and 4-trimethylsilylcyclohexanol, and some of their esters and carbon counterparts were synthesized. Structures of the nineteen new compounds were determined by 1H NMR, IR and MS. Their odors are evaluated.
文摘An experiment for preparation of SOI films by using the scanning electron beam to modify the polycrystalline silicon on SiO2 is presented. This method takes on the epitaxial lateral growth of liquid phase with the crystallon to form monocrystalline silicon films. The effects of the beam power density, scanning velocity, temperature of the substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the monocrystalline silicon zone is nearly 200×25μm2.
文摘The refractory raw materials used in recent years were introduced,including metal and intermetallic compounds（ aluminum,silicon,ferrosilicon,etc.）,nonoxide raw materials（ Si3N4 and ferrosilicon nitride）.The developmental tendency of China＇s raw refractories in the future was also discussed.
文摘The technology of preparing reaction burning silicon carbide (RBSC) by replacing SiC/C with entirely carbonaceous raw materials is investigated. Experimental results show the predominant factors of successfully preparing RBSC are as following:strictly controlling the porosity and pore diameter of biscuit, obtaining ideal carbon network permeating of Si and completely reaction between Si and beta-SiC.
