SiCp/Cu composites with a compact microstructure were successfully fabricated by vacuum hot-pressing method. In order to suppress the detrimental interfacial reactions and ameliorate the interfacial bonding between co...SiCp/Cu composites with a compact microstructure were successfully fabricated by vacuum hot-pressing method. In order to suppress the detrimental interfacial reactions and ameliorate the interfacial bonding between copper and silicon carbide, molybdenum coating was deposited on the surface of silicon carbide by magnetron sputtering method and crystallized heat-treatment. The effects of the interfacial design on the thermo-physical properties of Si Cp/Cu composites were studied in detail. Thermal conductivity and expansion test results showed that silicon carbide particles coated with uniform and compact molybdenum coating have improved the comprehensive thermal properties of the Si Cp/Cu composites. Furthermore, the adhesion of the interface between silicon carbide and copper was significantly strengthened after molybdenum coating. Si Cp/Cu composites with a maximum thermal conductivity of 274.056 W/(m·K) and a coefficient of thermal expansion of 9 ppm/K were successfully prepared when the volume of silicon carbide was about 50%, and these Si Cp/Cu composites have potential applications for the electronic packageing of the high integration electronic devices.展开更多
La2(Zr0.7Ce0.3)2O7 (LZ7C3) ceramic was synthesized by solid state reaction with La2O3, ZrO2 and CeO2 as starting materials. The synthesis kinetics, phase structure, mass loss and microstructure were studied by the...La2(Zr0.7Ce0.3)2O7 (LZ7C3) ceramic was synthesized by solid state reaction with La2O3, ZrO2 and CeO2 as starting materials. The synthesis kinetics, phase structure, mass loss and microstructure were studied by thermo gravimetric-different thermal analyzer (TG-DTA), X-ray difference (XRD) and scanning electron microscopy (SEM). The thermal conductivity and thermal expansion coefficient were measured by laser-flash method and pushing-rod method, respectively. XRD results showed that LZ7C3 was a mixture of La2Zr2O7 (LZ, pyro- chlore) and La2Ce2O7 (LC, fluorite). The lowest synthesis temperature and time of LZ7C3 were 1400 oC and 5 h. There were no peaks of La2O3 when the powder granularity was about 0.82 μm in the synthesis process. The atom ratio La:Zr:Ce of prepared LZ7C3 powder was very close to 10:7:3 which was the theory value of LZ7C3. The thermal conductivity of LZ7C3 decreased gradually with the temperature increased up to 1200 oC, and was located within 0.79 to 1.02 W/(m·K), which was almost 50% lower than that of LZ, whereas its thermal expansion coefficient was larger and the value was 11.6×10-6 K-1.展开更多
This study was pertained to the effects of Ti coating on diamond surfaces and Si addition into Al matrix on the thermal conductivity(TC) and the coefficient of thermal expansion(CTE) of diamond/Al composites by pr...This study was pertained to the effects of Ti coating on diamond surfaces and Si addition into Al matrix on the thermal conductivity(TC) and the coefficient of thermal expansion(CTE) of diamond/Al composites by pressure infiltration.The fracture surfaces,interface microstructures by metal electro-etching and interfacial thermal conductance of the composites prepared by two methods were compared.The results reveal that Ti coating on diamond surfaces and only12.2 wt% Si addition into Al matrix could both improve the interfacial bonding and increase the TCs of the composites.But the Ti coating layer introduces more interfacial thermal barrier at the diamond/Al interface compared to adding 12.2 wt% Si into Al matrix.The diamond/Al composite with 12.2 wt% Si addition exhibits maximum TC of 534 W·m^-1·K^-1and a very low CTE of 8.9×10^-6K^-1,while the coating Ti-diamond/Al composite has a TC of 514 W·m^-1·K^-1 and a CTE of 11.0×10^-6K^-1.展开更多
基金Funded by the China Aerospace Science&Industry Corp
文摘SiCp/Cu composites with a compact microstructure were successfully fabricated by vacuum hot-pressing method. In order to suppress the detrimental interfacial reactions and ameliorate the interfacial bonding between copper and silicon carbide, molybdenum coating was deposited on the surface of silicon carbide by magnetron sputtering method and crystallized heat-treatment. The effects of the interfacial design on the thermo-physical properties of Si Cp/Cu composites were studied in detail. Thermal conductivity and expansion test results showed that silicon carbide particles coated with uniform and compact molybdenum coating have improved the comprehensive thermal properties of the Si Cp/Cu composites. Furthermore, the adhesion of the interface between silicon carbide and copper was significantly strengthened after molybdenum coating. Si Cp/Cu composites with a maximum thermal conductivity of 274.056 W/(m·K) and a coefficient of thermal expansion of 9 ppm/K were successfully prepared when the volume of silicon carbide was about 50%, and these Si Cp/Cu composites have potential applications for the electronic packageing of the high integration electronic devices.
基金Project supported by National Basic Research Program of China (973 Program, 613112)
文摘La2(Zr0.7Ce0.3)2O7 (LZ7C3) ceramic was synthesized by solid state reaction with La2O3, ZrO2 and CeO2 as starting materials. The synthesis kinetics, phase structure, mass loss and microstructure were studied by thermo gravimetric-different thermal analyzer (TG-DTA), X-ray difference (XRD) and scanning electron microscopy (SEM). The thermal conductivity and thermal expansion coefficient were measured by laser-flash method and pushing-rod method, respectively. XRD results showed that LZ7C3 was a mixture of La2Zr2O7 (LZ, pyro- chlore) and La2Ce2O7 (LC, fluorite). The lowest synthesis temperature and time of LZ7C3 were 1400 oC and 5 h. There were no peaks of La2O3 when the powder granularity was about 0.82 μm in the synthesis process. The atom ratio La:Zr:Ce of prepared LZ7C3 powder was very close to 10:7:3 which was the theory value of LZ7C3. The thermal conductivity of LZ7C3 decreased gradually with the temperature increased up to 1200 oC, and was located within 0.79 to 1.02 W/(m·K), which was almost 50% lower than that of LZ, whereas its thermal expansion coefficient was larger and the value was 11.6×10-6 K-1.
基金financially supported by the National Natural Science Foundation of China (No.51274040)the Fundamental Research Funds for the Central Universities (No.FRF-TP-10-003B)
文摘This study was pertained to the effects of Ti coating on diamond surfaces and Si addition into Al matrix on the thermal conductivity(TC) and the coefficient of thermal expansion(CTE) of diamond/Al composites by pressure infiltration.The fracture surfaces,interface microstructures by metal electro-etching and interfacial thermal conductance of the composites prepared by two methods were compared.The results reveal that Ti coating on diamond surfaces and only12.2 wt% Si addition into Al matrix could both improve the interfacial bonding and increase the TCs of the composites.But the Ti coating layer introduces more interfacial thermal barrier at the diamond/Al interface compared to adding 12.2 wt% Si into Al matrix.The diamond/Al composite with 12.2 wt% Si addition exhibits maximum TC of 534 W·m^-1·K^-1and a very low CTE of 8.9×10^-6K^-1,while the coating Ti-diamond/Al composite has a TC of 514 W·m^-1·K^-1 and a CTE of 11.0×10^-6K^-1.