Thermal Defect Analysis on Transformer Using a RLC Network and Thermography

Electrical transformers are vital components found virtually in most power-operated equipments. These transformers spontaneously radiate heat in both operation and steady-state mode. Should this thermal radiation inherent in transformers rises above allowable threshold a reduction in efficiency of operation occurs. In addition, this could cause other components in the system to malfunction. The aim of this work is to detect the remote causes of this undesirable thermal rise in transformers such as oil distribution transformers and ways to control this prevailing thermal problem. Oil transformers consist of these components: windings usually made of copper or aluminum conductor, the core normally made of silicon steel, the heat radiators, and the dielectric materials such as transformer oil, cellulose insulators and other peripherals. The Resistor-Inductor-Capacitor Thermal Network (RLCTN) model at architectural level identifies with these components to have ensemble operational mode as oil transformer. The Inductor represents the windings, the Resistor representing the core and the Capacitor represents the dielectrics. Thermography of transformer under various loading conditions was analyzed base on Infrared thermal gradient. Mathematical, experimental, and simulation results gotten through RLCTN with respect to time and thermal image analysis proved that the capacitance of the dielectric is inversely proportional to the thermal rise.

Thermal transport properties of defective graphene:A molecular dynamics investigation

In this work the thermal transport properties of graphene nanoribbons with randomly distributed vacancy defects are investigated by the reverse non-equilibrium molecular dynamics method. We find that the thermal conductivity of the graphene nanoribbons decreases as the defect coverage increases and is saturated in a high defect ratio range. Further analysis reveals a strong mismatch in the phonon spectrum between the unsaturated carbon atoms in 2-fold coordination around the defects and the saturated carbon atoms in 3-fold coordination, which induces high interfacial thermal resistance in defective graphene and suppresses the thermal conductivity. The defects induce a complicated bonding transform from sp2 to hybrid sp--sp2 network and trigger vibration mode density redistribution, by which the phonon spectrum conversion and strong phonon scattering at defect sites are explained. These results shed new light on the understanding of the thermal transport behavior of graphene-based nanomaterials with new structural configurations and pave the way for future designs of thermal management phononic devices.

Effects of doping, Stone Wales and vacancy defects on thermal conductivity of single-wall carbon nanotubes

The thermal conductivity of carbon nanotubes with certain defects （doping, Stone-Wales, and vacancy） is investigated by using the non-equilibrium molecular dynamics method. The defective carbon nanotubes （CNTs） are compared with perfect tubes. The influences of type and concentration of the defect, length, diameter, and chirality of the tube, and the ambient temperature are taken into consideration. It is demonstrated that defects result in a dramatic reduction of thermal conductivity. Doping and Stone-Wales （SW） defects have greater effect on armchair tubes, while vacancy affects the zigzag ones more. Thermal conductivity of the nanotubes increases, reaches a peak, and then decreases with increasing temperature. The temperature at which the thermal conductivity peak occurs is dependent on the defect type. Different from SW or vacancy tubes, doped tubes are similar to the perfect ones with a sharp peak at the same temperature. Thermal conductivity goes up when the tube length grows or diameter declines. It seems that the length of thermal conductivity convergence for SW tubes is much shorter than perfect or vacancy ones. The SW or vacancy tubes are less sensitive to the diameter change, compared with perfect ones.

Influences of vacancy defects on thermal conductivities of Ge thin films

The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics （MD） simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.

Thermal conductivity of carbon nanotube superlattices:Comparative study with defective carbon nanotubes

We use molecular dynamics simulation to calculate the thermal conductivities of（5, 5） carbon nanotube superlattices（CNTSLs） and defective carbon nanotubes（DCNTs）, where CNTSLs and DCNTs have the same size. It is found that the thermal conductivity of DCNT is lower than that of CNTSL at the same concentration of Stone–Wales（SW） defects. We perform the analysis of heat current autocorrelation functions and observe the phonon coherent resonance in CNTSLs, but do not observe the same effect in DCNTs. The phonon vibrational eigen-mode analysis reveals that all modes of phonons are strongly localized by SW defects. The degree of localization of CNTSLs is lower than that of DCNTs, because the phonon coherent resonance results in the phonon tunneling effect in the longitudinal phonon mode. The results are helpful in understanding and tuning the thermal conductivity of carbon nanotubes by defect engineering.

Different Thermal Stabilities of Cation Point Defects in LaAlO_3 Bulk and Films

Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.

SEM and Positron Annihilation Technology Investigation on the Defect Change with Thermal Treatment Temperature in GaP

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Characterizing Property of States: Effect of Defects on the Coefficient of Thermal Expansion and the Specific Heat Capacity of ZrB₂

Thermal storage potential and thermal expansion are characteristic properties for extreme applications. ZrB2 is a candidate for advanced applications in aircraft and fusion reactors. This article presents density functional theory calculations of its states, microstructure and quasi-harmonic levels calculations of thermophysical properties. Band structure highlighted dynamical instability with metallic impurities in ZrB2 structure based on frequency modes. The observed projected density of states (PDOS) appropriate 4d orbital of Zr dominated at low frequency both in perfect crystal in the presence or absence of covalent impurities while B 2s and 2p orbitals dominate higher frequency states. Temperature dependency and anisotropy of coefficient of thermal expansion (CTE) were evaluated with various impurities. Various thermodynamic properties like entropy and free energy were explored for degrees of freedom resulting from internal energy changes in the material. Computed results for heat capacity and CTE were compared to available numerical and experimental data.

Study of Surface and Subsurface Defects in Materials by Photothermal Deflection Technique: Theory and Experience

Photothermal deflection is widely used to study defects in materials. Both high spatial resolution and high sensitivity are required to detect them. In order to improve the theoretical model in the case of uniform heating (one dimensional heat treatment) we have chosen to heat the sample by a halogen lamp. The sample which contains a known surface and subsurface defects is first covered by a thin graphite layer and placed in air. The sample fixed on a vertical holder is able to move in the x and y directions thanks a two stepper motors. The measurement showed excellent agreement between experimental and simulation results.

Thermally Agitated Self Assembled Carbon Nanotubes and the Scenario of Extrinsic Defects

Employing the arc discharge method we prepared carbon nanotubes, CNTs, in open air deionized water. Their morphology was studied varying the annealing temperature and characterizing by Raman Spectroscopy, Transmission Electron Microscopy (TEM), X-Ray Diffractogram (XRD) and Energy Dispersion X-Ray (EDX). According to the study, the CNTs are found self-assembled where the graphene sheets and/or defects are observed sort out themselves with enhancement of temperature.

Study of Defect and Large Thermal Strain Nature in Organic Crystal of

Imperfections in the(001) plate of rubidium hydrogen phthalate(RAP, RbC8H5O4) crystals have been studied by means of X-ray topography. The main defects are the grown-in dislocations, inclusions, growth layers and the thermal strain lobes caused by heat. The large thermal strain nature was determined by an Inclusion Probed Method (IPM), which is due to the gradient of the interplanar spacing formed by atomic displacement to <110> directions.

TSV阵列在温度循环下的晶格变化对电学性能影响的研究

针对TSV(Through Silicon Via,硅通孔)热机械可靠性较差且其结构特性变化对电学性能影响情况不明的问题,基于一种TSV阵列叉指电极对样品开展了-55~125℃的温度循环试验,测试了温循后阵列电极的电学性能与边界绝缘性能变化,跟踪测试了TSV铜柱的几何尺寸变化,对比分析了试验前后TSV结构的形貌和晶格特性等衍化规律。结果表明,温度循环载荷导致了TSV-Cu晶粒向上生长、铜柱体积变大、微观结构缺陷产生以及电学性能退化;此外,还定量地构建了晶格特性变化对TSV阵列电极电学性能影响的关系架构,具有一定的工程意义。

电缆终端应力锥错位缺陷对界面温度及应力分布的影响

电缆终端内部缺陷会造成终端内部电场分布不均、局部温度升高与应力分布变化,可能引发局部放电造成绝缘击穿。为研究终端应力锥错位缺陷对电缆界面温度及应力分布的影响,分别建立了电缆终端安装不足与安装过盈情况下的电缆终端错位缺陷模型,并进行电-热-力多物理场耦合仿真分析。结果表明:电缆终端绝缘屏蔽层截断处是电缆终端的薄弱部位,终端界面温度和界面压力都会在绝缘屏蔽层截断处发生突变。当电缆终端存在安装不足缺陷时,终端屏蔽层截断处与应力锥根部之间会出现电场升高区域,在安装位置为-7.5 mm时界面温度最高,绝缘界面压力值升高,且安装位置为-2.5mm时绝缘承受的压力值最大;当电缆终端存在安装过盈缺陷时,绝缘屏蔽层截断处会发生电场畸变,电场突变量随着偏移量的增加而增大,在安装位置为+5.0mm时绝缘界面压力值最大,且界面压力突变量增加发生畸变。因此,在电缆终端实际设计安装与运行维护中,额外注意应力锥错位缺陷对终端内部应力分布的影响十分必要。

石墨烯基导热薄膜的研究进展

随着现代技术的发展,散热和导热已成为制约芯片器件小型化和大功率制造业发展的关键问题之一。由于传统的金属导热材料存在密度大和易氧化等问题,近年来以石墨烯基材料为代表的非金属碳基材料逐渐成为国内外的研究热点。本文综述了近年国内外石墨烯导热薄膜的制备方法及最新研究成果,分析讨论了热处理工艺、晶粒尺寸、薄膜密度及杂质原子和缺陷等对石墨烯导热薄膜性能的影响和物理机理,并对该领域的发展趋势进行了展望。

基于LabVIEW的红外热波图像缺陷检测系统设计

碳纤维增强复合材料大量应用于航空领域,对其质量提出了更高的要求。但是传统人工检测方法工作强度高、效率低。为了提高碳纤维复合材料的缺陷检测效率,本文基于LabVIEW软件开发平台设计CFRP(carbon fiber reinforced plastics)缺陷检测系统,提取缺陷边缘并进行数量统计。本研究采用主动式红外热成像无损检测技术,通过红外热像仪获取激光扫描的损伤试样表面热图像。针对红外图像对比度及均匀性差的特点,使用HSL(hue, saturation, luminance)进行颜色平面提取,灰度变换,选用适用于处理光照分布不均匀图像的Niback局部阈值分割处理算法进行感兴趣区域图像阈值分割处理。最后通过形态学处理增强图像并实现缺陷特征提取和缺陷数量统计。本文通过搭建红外热成像缺陷检测实验平台完成红外热波缺陷图像的采集、处理,设计软件平台及用户界面以实现缺陷特征的提取。相比于人工检测,该系统的设计极大地减少了检测用时,有助于实现缺陷检测的自动化。

变压器绕组热缺陷温度演化规律及其辨识方法

近年来变压器因绕组发生热故障烧毁时有发生,严重威胁电网安全。为保障变压器的安全稳定运行,开展了变压器绕组热缺陷温度演化规律及其辨识方法研究。首先,基于有限元法研究构建变压器绕组电磁-温度-流体多物理场耦合仿真模型,并通过温升试验验证仿真模型的有效性;然后,仿真分析绕组不同过热位置、热缺陷严重程度和运行工况对绕组局部区域温度的影响规律;最后,应用绕组轴向油道多点温度突变分析研究提出绕组热缺陷位置和严重程度辨识方法。研究结果表明:基于该文多场耦合仿真模型计算的温度值与温升试验实测值的误差小于6%;绕组不同区域发生热缺陷时,过热区域热量会沿油流导向路径快速传递,绕组油道内多点温升值会随其下方区域过热温度的增大呈现线性规律增长;该文提出的热缺陷辨识方法对热缺陷位置辨识的准确度为100%,对热缺陷温度估计的相对均方根误差为6.1%。采用该研究成果能及早发现变压器运行过程中绕组上的热缺陷,避免由缺陷向更严重的故障发展,保障变压器的安全运行。

基于膦氧化物钝化的热蒸发像素化钙钛矿发光二极管

热蒸发法是实现钙钛矿发光二极管商业化显示应用的可靠技术。然而,热蒸发沉积的钙钛矿薄膜的PLQY经常较低,并且钝化手段不如溶液法丰富。本文报道了一种通过原位共蒸技术将钝化剂引入钙钛矿层的方法,这种方法能够钝化真空沉积钙钛矿中的缺陷,增强辐射复合,并提高钙钛矿的PLQY。氧膦基团与不饱和位点形成配位络合,钝化了钙钛矿的晶界缺陷,并抑制了带尾态缺陷。基于最佳比例的钙钛矿薄膜所制备的LED器件表现出最大6.3%的EQE,最大亮度为35642 cd/m^(2)。更进一步地,基于全真空的器件制备工艺,获得了最大EQE为5.0%的312 ppi高分辨率PeLEDs。总之,本文为热蒸发PeLEDs的缺陷钝化提供了有用的指导,证明热蒸发PeLEDs在效率和亮度提升方面具有巨大潜力,并具备商业化前景。

基于红外热成像的古建筑墙内暗柱材料缺失检测

【目的】墙内暗柱是木结构古建筑的重要承重构件之一,因其处于潮湿和缺乏通风的环境,故多存在腐朽及由严重腐朽导致的材料缺失等缺陷,容易失去原有的承载能力和稳定性。墙内暗柱自身构造导致现有的检测手段受限,易造成不可逆的损坏。故本研究基于红外热成像原理开展墙内暗柱材料缺失缺陷检测理论与试验研究,以期为基于红外热成像的墙内暗柱缺陷状况无损检查方法的建立奠定部分前期基础。【方法】首先,从理论角度探讨古建筑墙内暗柱传热过程,推导稳态下木柱区域与纯墙体区域的温度公式,分析影响木柱材料缺失缺陷区域温度变化的因素;然后,建立试验模型,进行墙内暗柱缺陷红外检查试验,采集红外图像;最后,通过分析所获得的红外热图,探讨墙内暗柱材料缺失缺陷大小与墙体表面温度分布之间的关系。【结果】(1)理论研究表明:由于木材的横向导热系数远小于墙体导热系数,加热面加热温度相同的情况下,木柱墙体外表面所对应的温度偏低;墙内暗柱的检测效果主要受到缺陷尺寸,即缺陷高度、缺陷深度的影响。(2)试验结果表明:在稳态热传导下,木柱处的墙体外表面温度要低于纯墙体,即木柱处红外图像的颜色更浅;木柱缺陷的存在会使缺陷处墙体表面温度变高,红外图像颜色变深;木柱缺陷高度越大,缺陷导致的高温范围越大;木柱缺陷深度越大,缺陷区域温度值越高。(3)在非稳态热传导下,木柱中线温差分别与木柱缺陷高度(R^(2)≥0.964)、深度(R^(2)≥0.951)呈极强的正相关。(4)在木柱缺陷较小的情况下,墙体表面温度不因缺陷的存在而发生明显改变。【结论】木柱的缺陷高度与深度是影响缺陷红外热成像检测效果的主要因素,红外热成像法应用于古建筑墙内暗柱材料缺失缺陷的筛查与评估是可行的。

用于干式空心电抗器热致缺陷的可逆示温涂料制备与变色理化特性

电抗器包封的异常发热问题较为突出,易引起匝间绝缘故障导致设备损坏。为了及时检测异常发热,提出一种用于干式空心电抗器热致缺陷的可逆示温涂料制备方法,并对其变色性能、电学及热学性能进行分析。研究结果表明:显色剂双酚A决定变色材料的颜色深浅,其含量的增大使得其颜色先变深后缓慢变浅;溶剂聚丙烯蜡决定变色温度,其含量越高,变色开始温度越高,变色结束温度并不明显。进一步基于变色材料的颜色变化、变色时间、复色时间、变色温度及可逆性等影响因素,优选出变色材料最佳组分(结晶紫内酯,双酚A,聚丙烯蜡)含量配比。采用搅拌混合法制备出可用于干式空心电抗器热致缺陷的可逆示温涂料,其变色温度范围为107~131℃,变色效果较为明显,并具有良好的耐酸碱性和有机溶剂性;其沿面闪络电压随变色材料组分含量的增加先增大后减小,持久性就地型防污闪复合涂料(permanent-room-temperature-valcanicedanti-contamination flashover composite coating,PRTV)与变色材料质量比为10:3.4时达到峰值9.27 kV/cm;导热系数为0.2514~0.5806W/(m·K),并随组分含量增加而降低。研究成果可为干式空心电抗器热致缺陷温度在线检测提供方法参考。

蜂窝夹层结构缺陷红外热成像检测及缺陷分类

为实现GFRP/NOMEX蜂窝夹层结构常见缺陷的准确分类,基于红外热成像无损检测技术,采用卷积神经网络及迁移学习技术建立GFRP/NOMEX蜂窝夹层结构缺陷的分类模型,比较微调的VGG16、MobileNetV2、ResNet50、InceptionV3、DenseNet201模型对于缺陷的分类效果,结果表明以上模型针对GFRP/NOMEX蜂窝夹层结构蒙皮脱粘缺陷、夹层脱粘缺陷、积水缺陷、堵胶缺陷及健康区域均可实现准确的识别分类,其准确率均在94%以上。其中基于VGG16的两种迁移学习模型及ResNet50的迁移学习模型对于此数据集的分类效果优于其余几种经典模型的迁移学习网络,其准确率分别达到99.94%、99.10%、98.95%,五个类别φ值得分均高于96%,可实现缺陷区域及健康区域的有效分类。