Thermoelastic stresses in SiC single crystals grown by the physical yapor transport method

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.

Evolution of thermo-physical properties of diamond/Cu composite materials under thermal shock load

In this paper, the two-flume method was used to study the change laws of the thermal conductivity and thermal expansion coefficient of diamond/Cu composite materials with 100, 300, and 500 cycle numbers, under the action of thermal shock load between-196 and 85 °C; the X-ray diffraction method（XRD） was used to study the change of the residual stress in the thermal shock process of the diamond/Cu composite materials; and the evolution of the fracture microstructure with different thermal shock cycle numbers was observed through scanning electron microscopy（SEM）. The results of the study show that the increase of the binder residue at the interface reduces the thermal shock stability of the diamond/Cu composite materials. In addition, under the thermal shock load between-196 and 85 °C, the residual stress of the diamond/Cu composite materials increases continuously with the increase of the cycle numbers, the increase of residual stress leads to a small amount of interface debonding, an increase of the interfacial thermal resistances, and a decrease of the constraints of low-expansion component on material deformation, thus the thermal conductivity decreases slightly and the thermal expansion coefficient increases slightly.