It is shown that the introduction of thermal effect, zero-point vibration, and phonon anharmonicity to a high quality and first-principle-Sased force field （atomic potential） results in a significant improvement in ...It is shown that the introduction of thermal effect, zero-point vibration, and phonon anharmonicity to a high quality and first-principle-Sased force field （atomic potential） results in a significant improvement in predict- ing the densities for the α phase crystalline hexahydro-1,3,5-trinitro-l,3,5-triazine （RDX）, and derivation of its high-fidelity Hugoniot locus and Mie-Grfineisen equation of state covering a very wide range of pressures and temperatures. This work can be used to efficiently and accurately predict the thermophysical properties of solid explosives over the pressures and temperatures to which they are subjected, which is a long-standing issue in the field of energetic materials.展开更多
We complete the derivation of the Cornwall-Jackiw-Tomboulis effective potential for quark propagator at finite temperature and finite quark chemical potential in the real-time formalism of thermal field theory and in ...We complete the derivation of the Cornwall-Jackiw-Tomboulis effective potential for quark propagator at finite temperature and finite quark chemical potential in the real-time formalism of thermal field theory and in Landau gauge. In the approximation that the function A(p2) in inverse quark propagator is replaced by unity, by means of the running gauge coupling and the quark mass function invariant under the renormalization group in zero temperature Quantum Chromadynamics (QCD), we obtain a calculable expression for the thermal effective potential, which will be a useful means to research chiral phase transition in QCD in the real-time formalism.展开更多
We have proven the general relations between the gap equations obeyed by dynamical fermion mass and thecorresponding effective potentials at finite temperature and chemical potential in D-dimensional four-fermion inte...We have proven the general relations between the gap equations obeyed by dynamical fermion mass and thecorresponding effective potentials at finite temperature and chemical potential in D-dimensional four-fermion interactionmodels. This gives an easy approach to get effective potentials directly from the gap equations. We find out explicitexpressions for the effective potentials at zero temperature in the cases of D = 2,3, and 4 for practical use.展开更多
Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistan...Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor（MOSFET）is an important semiconductor device for light emitting diode-integrated circuit（LED IC） driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester（T3ster） at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs： FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.展开更多
Goal: Formulation of empiric formula, which establishes relations between major matrix parameters of ceramic materials and composites and the coefficient of resistance to material thermogradient. Method: Harcpurt’s m...Goal: Formulation of empiric formula, which establishes relations between major matrix parameters of ceramic materials and composites and the coefficient of resistance to material thermogradient. Method: Harcpurt’s method of cooling of water in boiling regime till disappearance of water. Results: It is proved that work-pieces reveal maximum thermal resistance and preservation of exploitation properties, when total closed porosity is within 2% - 8%, and pore sizes vary within 1 - 6 mcm. Besides, they are more or less of spherical form and are spread equally in the matrix. Conclusion: Thermogradient effect formula was defined for complex form work-pieces, when surfaces in the pieces are transacted several times by angles of various curvature radii.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11372053,11402031,11221202 and 11172044the Opening Project of the State Key Laboratory of Explosion Science and Technology under Grant No KFJJ14-06M
文摘It is shown that the introduction of thermal effect, zero-point vibration, and phonon anharmonicity to a high quality and first-principle-Sased force field （atomic potential） results in a significant improvement in predict- ing the densities for the α phase crystalline hexahydro-1,3,5-trinitro-l,3,5-triazine （RDX）, and derivation of its high-fidelity Hugoniot locus and Mie-Grfineisen equation of state covering a very wide range of pressures and temperatures. This work can be used to efficiently and accurately predict the thermophysical properties of solid explosives over the pressures and temperatures to which they are subjected, which is a long-standing issue in the field of energetic materials.
文摘We complete the derivation of the Cornwall-Jackiw-Tomboulis effective potential for quark propagator at finite temperature and finite quark chemical potential in the real-time formalism of thermal field theory and in Landau gauge. In the approximation that the function A(p2) in inverse quark propagator is replaced by unity, by means of the running gauge coupling and the quark mass function invariant under the renormalization group in zero temperature Quantum Chromadynamics (QCD), we obtain a calculable expression for the thermal effective potential, which will be a useful means to research chiral phase transition in QCD in the real-time formalism.
文摘We have proven the general relations between the gap equations obeyed by dynamical fermion mass and thecorresponding effective potentials at finite temperature and chemical potential in D-dimensional four-fermion interactionmodels. This gives an easy approach to get effective potentials directly from the gap equations. We find out explicitexpressions for the effective potentials at zero temperature in the cases of D = 2,3, and 4 for practical use.
基金Project supported by the Collaborative Research in Engineering,Science&Technology(Grant No.P28C2-13)
文摘Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor（MOSFET）is an important semiconductor device for light emitting diode-integrated circuit（LED IC） driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester（T3ster） at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs： FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.
文摘Goal: Formulation of empiric formula, which establishes relations between major matrix parameters of ceramic materials and composites and the coefficient of resistance to material thermogradient. Method: Harcpurt’s method of cooling of water in boiling regime till disappearance of water. Results: It is proved that work-pieces reveal maximum thermal resistance and preservation of exploitation properties, when total closed porosity is within 2% - 8%, and pore sizes vary within 1 - 6 mcm. Besides, they are more or less of spherical form and are spread equally in the matrix. Conclusion: Thermogradient effect formula was defined for complex form work-pieces, when surfaces in the pieces are transacted several times by angles of various curvature radii.
基金Financial support for this work was provided by the USA National Science Foundation （NSF） （Nos. CMMI- 0900509, CBET-0803142, and ECCS-0708998）. Graphene oxide samples were supplied by Prof. Rodney S. Ruoff. The authors thank Dr. Heather A. Owen for technical support with SEM, and Dr. Leonidas E. Ocola for assistance in the electrode fabrication. The e-beam lithography was performed at the Center for Nanoscale Materials of Argonne National Laboratory, which is supported by the USA Department of Energy （No. DE- AC02-06CH11357）. The SEM imaging was conducted at the Electron Microscope Laboratory of University of Wisconsin-Milwaukee.
