Emerging Flexible Thermally Conductive Films:Mechanism,Fabrication,Application

Effective thermal management is quite urgent for electronics owing to their ever-growing integration degree,operation frequency and power density,and the main strategy of thermal management is to remove excess energy from electronics to outside by thermal conductive materials.Compared to the conventional thermal management materials,flexible thermally conductive films with high in-plane thermal conductivity,as emerging candidates,have aroused greater interest in the last decade,which show great potential in thermal management applications of next-generation devices.However,a comprehensive review of flexible thermally conductive films is rarely reported.Thus,we review recent advances of both intrinsic polymer films and polymer-based composite films with ultrahigh in-plane thermal conductivity,with deep understandings of heat transfer mechanism,processing methods to enhance thermal conductivity,optimization strategies to reduce interface thermal resistance and their potential applications.Lastly,challenges and opportunities for the future development of flexible thermally conductive films are also discussed.

XANES analysis of tribo-chemical and thermal films generating from some organic polysulfides

X 光检查吸收近的边结构(XANES ) 光谱学第一被用来描绘从烷基，本甲基和包含酰的器官的 polysulfides 产生的 triboehemical 和热电影的化学性质。从这些 polysulfides 产生的热电影主要由 FeSO4l 和烷基化二硫组成，这被发现了也存在在表面下并且从包含酰的 polysulfides 产生的热电影的体积。Undertriboehemical 条件，电影的作文依赖于添加剂的分子结构。也就是，从烷基 polysulfide 产生的 triboehemical 电影由烷基化二硫组成在外面表面， FeSO_4 的混合物， FeS_2 和亚在表面下，并且 FeSO_4in 体积；为本甲基 polysulfide 的 triboehemical 电影的作文由 FeSO4 组成在外面，出现作文在表面下并且体积与烷基 polysulfide.For 一样是包含酰的 polysulfides， triboehemical 电影由烷基化二硫组成在外面表面，和 FeS_2 在表面下并且体积。

Pyrolysis Characteristics and Thermal Kinetics of Degradable Films

开发可能减解的电影是为解决电影污染的问题的一个重要工具；在最近的年里，然而，仅仅与可能减解的塑料薄膜的热分析有关有很少研究。这研究详细说明了作文和热分解一个种有点用示差热分析(DTA ) 技术的三种可能减解的塑料薄膜。结果证明可能减解的电影和平常的电影有类似的 DTA 曲线，它反映了他们的类似的作文；然而，小差别被测量，它由于可能减解的电影的增加的成分。每部电影的热分解反应订单是大约 0.93。热分解激活精力和 pre 指数的因素跟随了平常的电影 】 相片的顺序可能减解的电影 】 相片可能减解的碳酸钙电影 】 可被细菌破坏的电影。这研究的结果为利用塑料薄膜引起的土壤污染为新理论打了基础。

Conductive Polyaniline/Cellulose/Graphite Composite Films with High Thermal Stability and Antibacterial Activity

Functional composite films were successfully prepared from cellulose, graphite(GP), and polyaniline(PANI) using a combination of physical and chemical processes. Cellulosewasdissolved in N-methylmorpholine-N-oxide monohydrate(NMMO) and regenerated in water to form the matrix. GP was dispersed in the NMMO solvent prior to the dissolution of the cellulose, and PANI was deposited on the surfaces of the cellulose/GP films by in situ chemical polymerization. The structures of the PANI/cellusose/GP composite films were investigated using X-ray diffraction analysis, Fourier transform infrared spectroscopy, scanning electron microscopy(SEM), and SEM/energy-dispersive X-ray spectroscopy. The mechanical strengths, thermal stabilities, conductivities, and antibacterial activities of the films were studied in detail. The results showed that GP formed a multilayered structure in the cellulose matrix and that the PANI nanoparticles were tightly wrapped on the film surface. The film thickness increased from 40 mm to 100 mm after the addition of GP and PANI. The tensile strength of the composite films was 80~107 MPa, with the elongation at break being 3%~10%. The final residual weight of the composite films was as high as 65%, and the conductivity of the composite films reached 14.36 S/m. The cellulose matrix ensured that the films were flexible and exhibited desirable mechanical properties, while the GP filler significantly improved the thermal stability of the films. The PANI coating acted as a protective layer during burning and provided good electrical conductivity and antibacterial activity against Escherichia coli; both of these characteristics were slightly enhanced by the incorporation of GP. These PANI/cellulose/GP composite films should be suitable for use in electronics, antistatic packing, and numerous other applications.

Enhancing the thermal conductivity of polymer-assisted deposited Al_2O_3 film by nitrogen doping

Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.

Effect of Mg-Film Thickness on the Formation of Semiconductor Mg_2Si Films Prepared by Resistive Thermal Evaporation Method

Mg films of various thicknesses were deposited on Si（111） substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg film thickness on the formation and structure of Mg2Si films were investigated. The results showed that the crystallization quality of Mg2Si films was strongly influenced by the thickness of Mg film. The XRD peak intensity of Mg2Si （220） gradually increased initially and then decreased with increasing Mg film thickness. The XRD peak intensity of Mg2Si （220） reached its maximum when the Mg film of 380 um was used. The thickness of the Mg2Si film annealed at 400℃ for 4 h was approximately 3 times of the Mg film.

Thermal Expansion Coefficients of Thin Crystal Films

The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

B4C/NRL flexible films for thermal neutron shielding

Boron carbide/natural rubber latex(B_4 C/NRL)flexible films were prepared via dip-molding with B_4 C content in the range of 5–55 wt% for thermal neutron(0.0253 e V) shielding. B_4 C was well dispersed in NRL according to microscopic observation. Both the inside and outside surfaces of the film were smooth. For B_4 C/NRL flexible films, the minimum elongation at break was greater than 600%, the minimum tensile strength was greater than 12 MPa, and the hardness was in the range of 35–55 HA,which were suitable for preparing flexible wearable products. The attenuation efficiencies of the B_4 C/NRL flexible films for thermal neutrons were also calculated. The B_4 C/NRL flexible films exhibit good attenuation effect for thermal neutrons.

Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

Effects of rapid thermal annealing on the room-temperature NO_2-sensing properties of WO_3 thin films under LED radiation

WO3 thin films were sputtered onto alumina substrates by DC facing-target magnetron sputtering. One sample was rapid-thermal-annealed （RTA） at 600 ℃ in a gas mixture of N2：O2 = 4 ： 1, and as a comparison, another was conventionally thermal-annealed at 600 ℃ in air. The morphology of both was investigated by scanning electron microscopy （SEM） and atomic force microscopy （AFM）, and the crystallization structure and phase identification were characterized by X-ray diffraction （XRD）. The NO2-sensing measurements were taken under LED light at room temperature. The sensitivity of the RTA-treated sample was found to be high, up to nearly 100, whereas the sensitivity of the conventionally thermal-annealed sample was about five under the same conditions. From the much better selectivity and response-recovery characteristics, it can be concluded that compared to conventional thermal annealing, RTA has a greater effect on the NO2-sensing properties of WO3 thin films.

Influence of nitrogen doping on thermal stability of fluorinated amorphous carbon thin films

Nitrogen doping fluorinated amorphous carbon (a-C∶F) films were deposited using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and annealed in Ar environment in order to investigate their thermal stability. Surface morphology and the thickness of the films before and after annealing were characterized by AFM and ellipsometer. Raman spectra and FTIR were used to analyze the chemical structure of the films. The results show that the surface of the films becomes more homogeneous either by the addition of N2 or after annealing. Deposition rate of the films increases a little at first and then decreases sharply with the increase of N2 source gas flux. It is also found that the fraction of aromatic rings structure increases and the thermal stability of the films is strengthened with the increase of N2 flux. Nitrogen doping is a feasible approach to improve the thermal stability of a-C∶F films.

P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films

P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.

Thickness Dependence of Structural and Optical Properties of Chromium Thin Films as an Infrared Reflector for Solar-thermal Conversion Applications

The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.

Thermal Characteristics of PVA-PANI-ZnS Nanocomposite Film Synthesized by Gamma Irradiation Method

Gamma irradiation is employed for in situ preparation of PVA-PANI-ZnS nanocomposite. The irradiation dose is varied from 10 to 40 kGy at 10 kGy intervals. The XRD result confirms the formation of crystalline phases corresponding to ZnS nanoparticles, PVA and PANI. Field emission scanning electron microscopy shows the formation of agglomerated PANI along the PVA backbone, within which the ZnS nanoparticles are dispersed.UV-visible spectroscopy is conducted to measure the transmittance spectra of samples revealing the electronic absorption characteristics of ZnS and PANI nanoparticles. Photo-acoustic（PA） setup is installed to investigate the thermal properties of samples. The PA spectroscopy indicates a high value of thermal diffusivity for samples due to the presence of ZnS and PANI nanoparticles. Moreover, at higher doses, the more polymerization and formation of PANI and ZnS nanoparticles result in enhancement of thermal diffusivity.

Morphology and Structure of SiO_2 Film Using Thermal Oxidation Process on(111)Silicon Crystals in Dry Oxygen Atmosphere

By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.

A Genetic Algorithm for Simultaneous Determination of Thin Films Thermal Transport Properties and Contact Resistance

一个基因算法(GA ) 被学习同时决定热运输性质和在厚底层上扔的薄电影的接触抵抗。Apulsed 相片热反射(PPR ) 系统为大小被采用。GA 被用来提取热性质。大小在硅底层上在不同厚度的 SiO_2 薄电影上被执行。结果证明伴有 PPR 系统的 GA 为底层上的薄电影的热性质的同时的决心是有用的。

Coefficient of thermal expansion of stressed thin films

A new technique was proposed to determine the coefficient of thermal expansion (CTE) of thin films at low temperature. Different pre-stress could be applied and the elastic modulus of materials at different temperatures was measured with CTE simultaneously to eliminate the influence of mechanical deformation caused by the pre-stress. By using this technique, the CTEs of polyimide/silica nanocomposite films with different silica doping levels were experimentally studied at temperature from 77 K to 287 K, and some characteristics related to this new technique were discussed.

Approximate solutions for the problem of liquid film flow over an unsteady stretching sheet with thermal radiation and magnetic field

The proposed method is based on replacement of the unknown function by a truncated series of the shifted Legendre polynomial expansion. An approximate formula of the integer derivative is introduced. Special attention is given to study the convergence analysis and derive an upper bound of the error for the presented approximate formula. The introduced method converts the proposed equation by means of collocation points to a system of algebraic equations with shifted Legendre coefficients. Thus, after solving this system of equations, the shifted Legendre coefficients are obtained. This efficient numerical method is used to solve the system of ordinary differential equations which describe the thin film flow and heat transfer with the effects of the thermal radiation, magnetic field, and slip velocity.

High quality NbTiN films fabrication and rapid thermal annealing investigation

NbTiN thin films are good candidates for applications including single-photon detector, kinetic inductance detector, hot electron bolometer, and superconducting quantum computing circuits because of their favorable characteristics,such as good superconducting properties and easy fabrication.In this work, we systematically investigated the growth of high-quality NbTiN films with different thicknesses on Si substrates by reactive DC-magnetron sputtering method.After optimizing the growth conditions, such as the gas pressure, Ar/N2 mixture ratio, and sputtering power, we obtained films with excellent superconducting properties.A high superconducting transition temperature of 15.5 K with narrow transition width of 0.03 K was obtained in a film of 300 nm thickness with surface roughness of less than 0.2 nm.In an ultra-thin film of 5 nm thick, we still obtained a transition temperature of 7.6 K.In addition, rapid thermal annealing(RTA) in atmosphere of nitrogen or nitrogen and hydrogen mixture was studied to improve the film quality.The results showed that Tc and crystal size of the NbTiN films were remarkably increased by RTA.For ultrathin films, the annealing in N2/H2 mixture had better effect than that in pure N2.The Tc of 10 nm films improved from 9.6 K to 10.3 K after RTA in N2/H2 mixture at 450℃.