In order to obtain the suitable phase change material（PCM） with low phase change temperature and improve its heat transfer rate, experimental investigation was conducted. Firstly, different mass ratios of lauric aci...In order to obtain the suitable phase change material（PCM） with low phase change temperature and improve its heat transfer rate, experimental investigation was conducted. Firstly, different mass ratios of lauric acid（LA） and stearic acid（SA） eutectic mixtures were prepared and characterized by differential scanning calorimetry（DSC）. Then, the performance of eutectic mixture during charging process under different fin widths in vertical condition, and performance during charging and discharging processes under different inlet temperature heat transfer fluid（HTF） in horizontal condition were investigated, respectively. The results revealed that the LA-SA eutectic mixture had the suitable phase change temperature and desired latent heat for low-temperature water floor heating system. Wide fins and high inlet temperature HTF significantly enhanced the transfer rate and decreased the melting time.展开更多
A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface...A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.展开更多
基金Funded by the Key Project of National Natural Science Foundation of China(No.51432007)the National Key Research and Development Program of China(No.2016 YFC0700201)+1 种基金the Science,Technology Support Program of Hubei Province(Nos.2014BAA134 and 2015BAA107)the Postdoctoral Fund of China(2017M612629)
文摘In order to obtain the suitable phase change material（PCM） with low phase change temperature and improve its heat transfer rate, experimental investigation was conducted. Firstly, different mass ratios of lauric acid（LA） and stearic acid（SA） eutectic mixtures were prepared and characterized by differential scanning calorimetry（DSC）. Then, the performance of eutectic mixture during charging process under different fin widths in vertical condition, and performance during charging and discharging processes under different inlet temperature heat transfer fluid（HTF） in horizontal condition were investigated, respectively. The results revealed that the LA-SA eutectic mixture had the suitable phase change temperature and desired latent heat for low-temperature water floor heating system. Wide fins and high inlet temperature HTF significantly enhanced the transfer rate and decreased the melting time.
基金Project(N110204015)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2012M510075)supported by the China Postdoctoral Science Foundation
文摘A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.
