A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the S...A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.展开更多
There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.
Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were o...Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.展开更多
We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid m...We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.展开更多
The absorption coefficient is usually considered as a constant for certain materials at the given wavelength.However,recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN ju...The absorption coefficient is usually considered as a constant for certain materials at the given wavelength.However,recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction.The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure.Here,we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers.Based on the Fokker-Planck theory,a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed.It could predict the experimental data well.Our results can give new ideas to design photoelectric devices.展开更多
The PN junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were measured.The relative change of capacitanc...The PN junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were measured.The relative change of capacitance can be greater than 100%,which is much greater than the relative change for low resistivity P-type silicon.The relative change of capacitance with and without laser radiation at zero bias is 121.7%.展开更多
The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined...The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined with argon sputtering are used for forming ultra-shallow pn+ junction, whose depth is lower than 30nm. In a vacuum system Ⅰ-Ⅴcharacteristics were measured. The stability problem which was found in the devices testing is also discussed in this paper.展开更多
文摘A new method for reducing the substrate rated losses of integrated spiral inductors is presented.The method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing steps.Integrated inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are calculated.The impacts of the substrate pn junction isolation on the inductor quality factor are studied.The experimental results show that substrate pn junction isolation in certain depth has achieved a significant improvement.At 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.
文摘There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.
基金supported by the National Major Scientific Instruments and Equipment Development Projects(No.2012YQ240121)National Natural Science Foundation of China(No.11075064)
文摘Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376019 and 61020106007)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120005110011)+2 种基金the Natural Science Foundation of Beijing(Grant No.4142038)the 111 Program of China(Grant No.B07005)the Fund of the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications)
文摘We report on the fabrications and characterizations of axial and radial Ga As nanowire pn junction diode arrays.The nanowires are grown on n-doped Ga As（111）B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition（MOCVD）. Diethyl–zinc and silane are used as p- and n-type dopant precursors,respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61804176,61991441,and 62004218)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB01000000)the Youth Innovation Promotion Association of Chinese Academy of Sciences.
文摘The absorption coefficient is usually considered as a constant for certain materials at the given wavelength.However,recent experiments demonstrated that the absorption coefficient could be enhanced a lot by the PN junction.The absorption coefficient varies with the thickness of the intrinsic layer in a PIN structure.Here,we interpret the anomalous absorption coefficient from the competition between recombination and drift for non-equilibrium carriers.Based on the Fokker-Planck theory,a non-equilibrium statistical model that describes the relationship between absorption coefficient and material thickness has been proposed.It could predict the experimental data well.Our results can give new ideas to design photoelectric devices.
文摘The PN junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were measured.The relative change of capacitance can be greater than 100%,which is much greater than the relative change for low resistivity P-type silicon.The relative change of capacitance with and without laser radiation at zero bias is 121.7%.
文摘The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined with argon sputtering are used for forming ultra-shallow pn+ junction, whose depth is lower than 30nm. In a vacuum system Ⅰ-Ⅴcharacteristics were measured. The stability problem which was found in the devices testing is also discussed in this paper.
