Thermodynamic analysis of growth of ternary Ⅲ-Ⅴ semiconductor materials by molecular-beam epitaxy

Thermodynamic models for molecular-beam epitaxy（MBE） growth of ternary Ⅲ-Ⅴ semiconductor materials are proposed.These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP,and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth.The lattice strain energy △G and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously.△G is the function of the alloy composition,which is affected by flux ratio and growth temperature directly.The calculation results reveal that flux ratio and growth temperature mainly influence the growth process.Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.

基于电-热-结构耦合分析的SiC MOSFET可靠性研究

作为应用前景广阔的功率器件,SiC金属氧化物半导体场效应晶体管(MOSFET)的可靠性分析至关重要。基于结构几何、材料特性和边界条件的建模方法可以显著缩短失效分析周期。考虑器件电阻随温度变化的特性,构建电-热-结构耦合的有限元模型,针对健康状态及不同失效模式进行温度和应力研究。结果表明,功率循环过程中键合线与芯片连接处受到的热应力最大,焊料层与芯片接触面的边缘位置次之;键合线失效对器件寿命影响最大,且焊料层中心空洞产生的应力大于边缘空洞产生的应力。仿真结果可为提升器件可靠性提供重要参考。

Solar‑Driven Sustainability:Ⅲ–ⅤSemiconductor for Green Energy Production Technologies

Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable remedy.Improving the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated charges.It has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge transfer.This focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic systems.The review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction reactions.In order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge separation.It also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen production.The main purpose is to produce hydrogen through sustainable and ecologically friendly energy conversion.The review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.

Luminescence Characteristics of Yb^(3+) and Er^(3+) in Ⅲ-Ⅴ Semiconductors

The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at 77K.The peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb^(3+)and ~4I_(13/2)→~4I_(15/2)of Er^(3+), respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam- ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curve of X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an- nealing at 850℃.The interaction between Yb^(3+)and Er^(3+)in the SI-InP has been investigated for the first time. The quenching effect of Yb^(3+)and Er^(3+)with each other has been observed when the doses of Yb and Er-im- planted SI-InP are equal.

TDDFT-SOS Studies on the Polarizabilities and Second-order Hyperpolarizabilities of Zn_3O_3 II-VI Semiconductor Clusters

The geometrical structure of semiconductor clusters including Zn3O3 was optimized by the DFT B3LYP method. With the same basis sets, dipole moments, polarizabilities and secondorder hyperpolarizabilities have been calculated and compared with the results obtained by TDDFT B3LYP method combined with sum-over-state （SOS） formula. The calculation results indicate that the dipole moments of the ground state depend on the atom radius and electronegative differences between elements and are their balance point as well. The polarizabilities of the clusters accord with the rule of the corresponding energy transformation from ground to excited state. The results predict an increase of second-order hyperpolarizabilities with increasing the distances between atoms in the clusters as well as a decrease of the polarizabilities and second-order hyperpolarizabilities in the same serial of semiconductor clusters with increasing the dipole moments of the ground states. The changes of dipole moments in ground states are inconsistent with transition moments. Spatial structure, charge transfer and other factors play an important role in composing the transition moments.

热载流子多结太阳能电池CdSe/CdS核壳量子点和纳米片的声子瓶颈效应机理

热载流子多结太阳能电池(HCMJSC)是热载流子及叠层电池概念相结合而提出的一种较有前景的第三代太阳能电池之一,其理论效率在一个标准太阳条件(即1000 W/m 2,25℃)下将高于65%,远高于32%的单节硅基电池极限效率。该型电池主要包括一个宽带隙的顶结薄膜和一个适中带隙的厚底结基底,以分别高效吸收利用高能和低能光子。其广泛应用于光电器件的宽带隙CdSe/CdS低维材料体系(如量子点、纳米片等)有望成为顶结薄膜的合适候选材料。然而,该材料体系中的声子瓶颈效应(PBE)机理目前尚不明晰。文章主要研究了CdSe/CdS核壳量子点(QDs)和纳米片(NPLs)中的PBE机理;通过稳态光致发光(SSPL)和皮秒时间分辨尺度光致发光(ps-TRPL)技术,计算该材料体系的热弛豫系数(Q th),从而定量分析激发载流子的弛豫速率,同时阐述了PBE和量子点中常见的俄歇复合之间的耦合关系,最终系统研究了QDs和NPLs中载流子弛豫过程机理,提出HCMJSC的发展路径和建议。

基于改进PSO的蝶形半导体激光器温控系统的设计

提出了基于改进粒子群优化算法(Particle Swarm Optimization,PSO)的蝶形半导体激光器温度控制系统。利用蝶形半导体激光器内部热电冷却器(Thermo-Electric Cooler,TEC)作为被控对象求出其传递函数,并在Simulink仿真工具中搭建温度控制系统仿真模型,分析温度对激光器工作的影响。基于改进PSO算法来优化比例积分微分(Proportional-Integral-Derivative,PID)控制器参数以达到良好的温度控制效果。实验结果表明,通过将改进PSO算法优化后的PID控制器参数应用到温控电路,可以保证激光器在安全平稳运行的前提下,达到激光器TEC温控系统稳定性高、响应速度快的目标,2 h内温度最大浮动误差为0.13℃,温度稳定性提升至0.52%。

Unraveling the effect of uniaxial strain on thermoelectric properties of Mg2Si:A density functional theory study

In this work, the effect of uniaxial strain on electronic and thermoelectric properties of magnesium silicide using density functional theory（DFT） and Boltzmann transport equations has been studied. We have found that the value of band gap increases with tensile strain and decreases with compressive strain. The variations of electrical conductivity,Seebeck coefficient, electronic thermal conductivity, and power factor with temperatures have been calculated. The Seebeck coefficient and power factor are observed to be modified strongly with strain. The value of power factor is found to be higher in comparison with the unstrained structure at 2% tensile strain. We have also calculated phonon dispersion, phonon density of states, specific heat at constant volume, and lattice thermal conductivity of material under uniaxial strain. The phonon properties and lattice thermal conductivity of Mg2Si under uniaxial strain have been explored first time in this report.

Latest advances in high-performance light sources and optical amplifiers on silicon

Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.

Structural, Optical and Electrical Properties of Li-doped ZnO Thin Films Influenced by Annealing Temperature

Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Li doped ZnO films annealed at 500-600 ℃ and thep type ZnO films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.

First principle investigation of the electronic and thermoelectric properties of Mg2C

In this paper, electronic and thermoelectric properties of Mg_2C are investigated by using first principle pseudo potential method based on density functional theory and Boltzmann transport equations. We calculate the lattice parameters,bulk modulus, band gap and thermoelectric properties（Seebeck coefficient, electrical conductivity, and thermal conductivity） of this material at different temperatures and compare them with available experimental and other theoretical data. The calculations show that Mg_2C is indirect band semiconductor with a band gap of 0.75 eV. The negative value of Seebeck coefficient shows that the conduction is due to electrons. The electrical conductivity decreases with temperature and Power factor（PF） increases with temperature. The thermoelectric properties of Mg_2C have been calculated in a temperature range of 100 K–1200 K.

First-principles study of the band gap tuning and doping control in CdSexTe1-x alloy for high efficiency solar cell

CdTe is one of the leading materials for low cost,high efficiency thin-film solar cells with a nearly ideal band gap of 1.48 eV.However,its solar to electricity power conversion efficiency(PCE)is hindered by the relatively low open circuit voltage(VOC)due to intrinsic defect related issues.Here,we propose that alloying CdTe with CdSe could possibly improve the solar cell performance by reducing the"ideal"band gap of CdTe to gain more short-circuit current from long-wavelength absorption without sacrificing much VOC.Using the hybrid functional calculation,we find that the minimum band gap of the CdTe1-xSex alloy can be reduced from 1.48 eV at x=0 to 1.39 eV at x=0.32,and most of the change come from the lowering of the conduction band minimum.We also show that the formation of the alloy can improve the p-type doping of CuCdimpurity based on the reduced effective formation energy and nearly constant effective transition energy level,thus possibly enhance VOC,thus PCE.

Epitaxial Techniques for Compound Semiconductor Growth:from LPE to MOVPE

The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.

>35%5-junction space solar cells based on the direct bonding technique

Multijunction solar cells are the highest efficiency photovoltaic devices yet demonstrated for both space and terrestrial applications.In recent years five-junction cells based on the direct semiconductor bonding technique(SBT),demonstrates space efficiencies>35%and presents application potentials.In this paper,the major challenges for fabricating SBT 5J cells and their appropriate strategies involving structure tunning,band engineering and material tailoring are stated,and 4-cm235.4%(AM0,one sun)5J SBT cells are presented.Further efforts on detailed optical managements are required to improve the current generating and matching in subcells,to achieve efficiencies 36%-37%,or above.

What has been measured by reflection magnetic circular dichroism in Ga_(1-x)Mn_xAs/GaAs structures?

An explicit expression of reflection magnetic circular dichroism （RMCD） has been derived, taking into account the interference effect that arises from multiple internal reflections in an air/Ga1-xMnxAs/GaAs dielectric layered system. It unambiguously shows that the RMCD signal is composed by three terms. In addition to the conventional term, which is sufficient in the absence of interference, an oscillatory term is required. Both of them are related to the imaginary part εxy of the off-diagonal element of the dielectric tensor. One also becomes aware that in this case RMCD is not actually determined only by the imaginary part εxy of the off-diagonal element of the dielectric tensor, as has been widely accepted. In fact, the real part εxy of the off-diagonal element will substantially mix into the measured RMCD results by another oscillatory cos θ form. It can even reverse the sign of RMCD, when the Gal_xMnxAs layer becomes thicker. The main aspects of these predictions were used to reasonably explain the RMCD results measured in three different types of samples. Our work will bring about a reconsideration of how to correctly explain RMCD results.

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire （0001）. Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AIInGaN （χmin = 1.5%） with GaN buffer layer. The channeling angular scan around an off-normal {1213} axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AIInGaN. The resulting AlInGaN is subjected to an elastic strain at interracial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （^eT = 0）.

First-principles study of the co-effect of carbon doping and oxygen vacancies in ZnO photocatalyst

Although tuning band structure of optoelectronic semiconductor-based materials by means of doping single defect is an important approach for potential photocatalysis application,C-doping or oxygen vacancy(Vo)as a single defect in ZnO still has limitations for photocatalytic activity.Meanwhile,the influence of co-existence of various defects in ZnO still lacks sufficient studies.Therefore,we investigate the photocatalytic properties of ZnOx C0.0625(x=0.9375,0.875,0.8125),confirming that the co-effect of various defects has a greater enhancement for photocatalytic activity driven by visible-light than the single defect in ZnO.To clarify the underlying mechanism of co-existence of various defects in ZnO,we perform systematically the electronic properties calculations using density functional theory.It is found that the coeffect of C-doping and Vo in ZnO can achieve a more controllable band gap than doping solely in ZnO.Moreover,the impact of the effective masses of ZnO_(x)C_(0.0625)(x=0.9375,0.875,0.8125)is also taken into account.In comparison with heavy Vo concentrations,the light Vo concentration(x=0.875)as the optimal component together with C-doping in ZnO,can significantly improve the visible-light absorption and benefit photocatalytic activity.

Molecule-based vertical transistor via intermolecular charge transport throughπ-πstacking

Theπ-πstacking is a well-recognized intermolecular interaction that is responsible for the construction of electron hopping channels in numerous conducting frameworks/aggregates.However,the exact role ofπ-to-πchannels within typical single crystalline organic semiconductors remains unclear as the orientations of these molecules are diverse,and their control usually requires additional side chain groups that misrepresent the intrinsic properties of the original semiconducting molecules.Therefore,the construction of conduction channels with intrinsicπ-πstacking in the molecule-based device is crucial for the utilization of their unique transport characteristics and understanding of the transport mechanism.To this end,we present a molecular intercalation strategy that integrates two-dimensional layered materials with functional organic semiconductor molecules for functional molecule-based electronics.Various organic semiconductor molecules can be effectively intercalated into the van der Waals gaps of semi-metallic TaS_(2) withπ-πstacking configuration and controlled intercalant content.Our results show that the vertical charge transport in the stacking direction shows a tunneling-dominated mechanism that strongly depends on the molecular structures.Furthermore,we demonstrated a new type of molecule-based vertical transistor in which TaS_(2) andπ-πstacked organic molecules function as the electrical contact and the active channel,respectively.On/off ratios as high as 447 are achieved under electrostatic modulation in ionic liquid,comparable to the current state-of-the-art molecular transistors.Our study provides an ideal platform for probing intrinsic charge transport acrossπ-πstacked conjugated molecules and also a feasible approach for the construction of high-performance molecule-based electronic devices.

电力电子电路中功率晶体管结温在线测量技术研究现状

功率晶体管结温的在线测量对于电力电子变换器的优化运行以及可靠性监测具有重要意义。实时获取的晶体管结温可用于退化监测、日常维护以及进行有效的热控制来减少功率损耗,提高寿命。对现有的电力电子变换器中功率晶体管结温测量方法进行归纳整理。首先介绍目前功率晶体管结温离线获取的三类方法,并分析各自的优缺点。在此基础上,将现有的功率晶体管结温在线获取方法分为基于热模型的结温测量和基于热敏电参数的结温测量两大类。详细介绍各功率晶体管结温在线测量技术的工作原理,并对各个方法进行总结,分析各自的优势及不足,最后指出功率晶体管结温在线测量的研究难点以及今后的研究方向。

基于热电制冷技术的某星载相机焦面组件热设计

热电制冷(Thermo-Electric Cooling,TEC)技术是利用帕尔帖效应的一种制冷方法,它不需要任何工质,无活动部件,结构简单,非常适宜于微型制冷领域或有特殊要求的场合。文章将TEC技术应用于某星载相机焦面组件的热设计,解决了探测器恒温控制问题。仿真分析结果表明,基于TEC技术的热设计方案在满足探测器恒温控制的同时,控温功耗比传统方案降低了90%。