Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors th...Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors that determined the output of the asymptotics of the operating parameters of semiconductor electronic devices,in particular,both the saturation of the limiting clock frequency of processors,and the saturation of the efficiency of both thermoelectric and photoelectric converters.But in semiconductors,although these thermodynamic errors manifested themselves not only in the instrumental,but also in the technological aspect,they could not prohibit semiconductor Electronics itself,unlike Electronics based on other materials.It’s just that a number of qualitative mistakes were made in the theory of semiconductor devices and photo devices.In this work,it is shown that the energy band diagram of semiconductor contacts itself was constructed with a significant omission-without taking into account the temperature force on the contact.At the same time,because of the incorrect calculation of currents according to the outdated formulas of Richardson-Langmuir-Deshman,there were also PROHIBITIONS.So the practitioners compensated for the errors of the theory with“empirical corrections”.So electronics engineers often made devices not according to a strict theory(which simply did not exist until now),but on a hunch and according to empirical local laws.And only the correction of the historical mistakes made it possible to expand the phenomenology of the description of processes in a Solid Body,on the basis of which it is possible to make calculations of highly efficient elements of Photo-Thermo-Electronics.展开更多
The ancient emission formulas of Langmuir and Richardson entered the calculations of subtle effects in semiconductor devices as basic ones.But,in the physics of semiconductor devices,these models have long played a pu...The ancient emission formulas of Langmuir and Richardson entered the calculations of subtle effects in semiconductor devices as basic ones.But,in the physics of semiconductor devices,these models have long played a purely decorative role,since they can describe in the most rough approximation only individual sections of the I-V characteristic.But it is precisely the fact that these formulas are basic when describing the barrier current-voltage characteristics(CVC)and prevented the consideration and use of thermoelectric effects in materials on a nano-scale.Thus,as these basic emission models actually imposed a ban on the MEASURABILITY of local thermoelectric effects,the existence of which has already been proven both phenomenologically and experimentally.The quantum transition technique is based on classical models.But it can also be used to correct these classic formulas.The calculation of the spatial transition of electrons over the potential barrier,taking into account the polarity of the kinetic energy,gives currents that are significantly higher than the currents of Langmuir and Richardson,including in the initial section of the I-V characteristic.Moreover,ballistic currents are concentrated at energy levels close to the threshold.This effect of condensation of electrons flowing down the barrier transforms the"anomalous"Seebeck coefficients into normal MEASURABLE Local Thermal EMF,including in p-n junctions.展开更多
文中采用Si_3N_4为绝缘壳体,Si_3N_4-B_4C和Si_3N_4-SiC为正、负极,设计制备层压式整体陶瓷热电偶传感器,并进行组织结构分析与性能测试。结果表明:热电偶各层之间以及电极复合材料中第二相与基体之间结合紧密;正、负电极复合材料呈现...文中采用Si_3N_4为绝缘壳体,Si_3N_4-B_4C和Si_3N_4-SiC为正、负极,设计制备层压式整体陶瓷热电偶传感器,并进行组织结构分析与性能测试。结果表明:热电偶各层之间以及电极复合材料中第二相与基体之间结合紧密;正、负电极复合材料呈现典型渗流导电行为;绝缘壳体与正、负电极之间具有良好的热适配性;热电偶在1 600℃时输出热电势与塞贝克系数达到242 m V和154.31μV/℃,在1 200℃保温时热电势偏差为±0.28%,表现出良好的测量精度、灵敏度和稳定度。展开更多
There was elaborated a method for calculating magnetic fields of the Solar System planets. It is based on the quantum theory of electroconductivity of metals and semiconductors. The latter helps to calculate thermoele...There was elaborated a method for calculating magnetic fields of the Solar System planets. It is based on the quantum theory of electroconductivity of metals and semiconductors. The latter helps to calculate thermoelectrical processes, always taking place in the bowels of “hot” planets. Main elements of those processes are planetary temperature gradients, thermo electromotive force and radially directed thermoelectrical currents, which are associated with Seebeck effect. Thermo electromotive force causes directional movement of planetary thermoelectrical currents both in metal cores and other conductive shells of planets. Those currents are big and they generate magnetic fields of proportional intensity. The capacities of the calculation method were tested while finding the reason why the Jupiter magnetic field is such complicated. As a result it was specified that the source of the main magnetic field of a planet is its metal core and the source of an additional magnetic field is the layer of liquid metal hydrogen. There was also found the third source of a local magnetic field of low intensity along the circular zone of the equatorial region. The conclusion that the Jupiter’s main magnetic field has a polarity opposite to the Earth’s one.展开更多
文摘Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors that determined the output of the asymptotics of the operating parameters of semiconductor electronic devices,in particular,both the saturation of the limiting clock frequency of processors,and the saturation of the efficiency of both thermoelectric and photoelectric converters.But in semiconductors,although these thermodynamic errors manifested themselves not only in the instrumental,but also in the technological aspect,they could not prohibit semiconductor Electronics itself,unlike Electronics based on other materials.It’s just that a number of qualitative mistakes were made in the theory of semiconductor devices and photo devices.In this work,it is shown that the energy band diagram of semiconductor contacts itself was constructed with a significant omission-without taking into account the temperature force on the contact.At the same time,because of the incorrect calculation of currents according to the outdated formulas of Richardson-Langmuir-Deshman,there were also PROHIBITIONS.So the practitioners compensated for the errors of the theory with“empirical corrections”.So electronics engineers often made devices not according to a strict theory(which simply did not exist until now),but on a hunch and according to empirical local laws.And only the correction of the historical mistakes made it possible to expand the phenomenology of the description of processes in a Solid Body,on the basis of which it is possible to make calculations of highly efficient elements of Photo-Thermo-Electronics.
文摘The ancient emission formulas of Langmuir and Richardson entered the calculations of subtle effects in semiconductor devices as basic ones.But,in the physics of semiconductor devices,these models have long played a purely decorative role,since they can describe in the most rough approximation only individual sections of the I-V characteristic.But it is precisely the fact that these formulas are basic when describing the barrier current-voltage characteristics(CVC)and prevented the consideration and use of thermoelectric effects in materials on a nano-scale.Thus,as these basic emission models actually imposed a ban on the MEASURABILITY of local thermoelectric effects,the existence of which has already been proven both phenomenologically and experimentally.The quantum transition technique is based on classical models.But it can also be used to correct these classic formulas.The calculation of the spatial transition of electrons over the potential barrier,taking into account the polarity of the kinetic energy,gives currents that are significantly higher than the currents of Langmuir and Richardson,including in the initial section of the I-V characteristic.Moreover,ballistic currents are concentrated at energy levels close to the threshold.This effect of condensation of electrons flowing down the barrier transforms the"anomalous"Seebeck coefficients into normal MEASURABLE Local Thermal EMF,including in p-n junctions.
文摘文中采用Si_3N_4为绝缘壳体,Si_3N_4-B_4C和Si_3N_4-SiC为正、负极,设计制备层压式整体陶瓷热电偶传感器,并进行组织结构分析与性能测试。结果表明:热电偶各层之间以及电极复合材料中第二相与基体之间结合紧密;正、负电极复合材料呈现典型渗流导电行为;绝缘壳体与正、负电极之间具有良好的热适配性;热电偶在1 600℃时输出热电势与塞贝克系数达到242 m V和154.31μV/℃,在1 200℃保温时热电势偏差为±0.28%,表现出良好的测量精度、灵敏度和稳定度。
文摘There was elaborated a method for calculating magnetic fields of the Solar System planets. It is based on the quantum theory of electroconductivity of metals and semiconductors. The latter helps to calculate thermoelectrical processes, always taking place in the bowels of “hot” planets. Main elements of those processes are planetary temperature gradients, thermo electromotive force and radially directed thermoelectrical currents, which are associated with Seebeck effect. Thermo electromotive force causes directional movement of planetary thermoelectrical currents both in metal cores and other conductive shells of planets. Those currents are big and they generate magnetic fields of proportional intensity. The capacities of the calculation method were tested while finding the reason why the Jupiter magnetic field is such complicated. As a result it was specified that the source of the main magnetic field of a planet is its metal core and the source of an additional magnetic field is the layer of liquid metal hydrogen. There was also found the third source of a local magnetic field of low intensity along the circular zone of the equatorial region. The conclusion that the Jupiter’s main magnetic field has a polarity opposite to the Earth’s one.
