La掺杂n型Mg_2Si基半导体的热电性能研究

采用感应熔炼然后热压的方法制备了La掺杂Mg2Si基热电材料Mg2-xLaxSi(x=0、0.002、0.005、0.010、0.015)。La在Mg2Si中占Mg位,当x≥0.005时,出现第二相LaMg。性能测试表明,Mg2-xLaxSi的导电类型为n型,Seebeck系数的绝对值随La含量的增多而减小,电导率和热导率均随La含量的增多而增大,在测试温度范围内,Mg1.995La0.005Si具有最高的ZT值,在774K温度下达到0.42。

Microwave direct synthesis and thermoelectric properties of Mg_(2)Si by solid-state reaction

In order to reduce the oxidation and volatilization caused by Mg element in the traditional methods for synthesizing Mg2Si compounds,Mg2Si thermoelectric materials were prepared by solid state reaction and microwave radiation techniques.Structure and phase composition of the materials were investigated by X-ray diffraction.The electrical conductivity,Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 700 K.It is found that high purity Mg2Si powders can be obtained with excessive content of 8% Mg from the stoichiometric Mg2Si at 853 K and 2.5 kW for 30 min.A maximum dimensionless figure of merit,ZT,of about 0.13 was obtained for Mg2Si at 600 K.

Synthesis and thermoelectric properties of Mg_2Si_(1-x)Sn_x solid solutions by microwave irradiation

In order to reduce the oxidizing and volatilizing caused by Mg element in the traditional methods for synthesizing Mg2Sil-xSnx （x=0.2, 0.4, 0.6, 0.8） solid solutions, microwave irradiation techniques were used in preparing them as thermoelectric materials. Structure and phase composition of the obtained materials were investigated by X-ray diffraction （XRD）. The electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 750 K. It is found that Mg2Si1-xSnx solid solutions are well formed with excessive content of 5% （molar fraction） Mg from the stoichiometric MgESil.xSnx under microwave irradiation. A maximum dimensionless figure of merit, ZT, of about 0.26 is obtained for Mg2Si1-xSnx solid solutions at about 500 K for x=0.6.

含金属Mg相的Mg_(2)(Sn,Si)薄膜的微观结构与热电性能

利用高真空磁控溅射设备,采用Mg-Sn-Si合金靶材和纯Mg靶进行顺序沉积,在表面含有500 nm厚氧化硅的单晶Si(100)衬底上制备了不同Mg含量的Mg-Sn-Si薄膜。沉积Mg-Sn-Si薄膜的相组成、化学成分、表面和横截面形貌和热电性能被系统的测量、观察和分析。结果表明,制备的Mg-Sn-Si薄膜由Mg_(2)(Sn,Si)固溶体和金属Mg相组成。随着金属Mg相含量的增多,沉积薄膜载流子浓度升高,迁移率降低。沉积薄膜的电导率随着金属Mg相含量的增多而增大,而Seebeck系数降低。沉积薄膜的金属Mg相含量增加,虽然电导率增加,但因Seebeck系数急剧下降,最终导致功率因子下降。在所研究的金属Mg含量范围内,Mg_(2)(Sn,Si)固溶体薄膜含有部分金属Mg相,对提高复合薄膜的功率因子是不利的。

Enhanced thermoelectric performance and atomic-resolution interfacial structures in BiSbTe thermo-electro-magnetic nanocomposites incorporating magnetocaloric LaFeSi nanoparticles

Incorporating magnetic nanoparticles in thermoelectric(TE)materials introduce magnetic interfaces with additional electron and phonon scattering mechanism for high TE performance.However,the influence of heterogeneous interfaces between magnetic nanoparticles and TE matrix on electronic and thermal transport remains elusive in the thermo-electric-magnetic nanocomposites.Here,using p-type TE material Bi_(0.3)Sb_(1.7)Te_(3)(BST)as matrix and magnetocaloric(MC)material La(Fe_(0.92)Co_(0.08))_(11.9)Si_(1.1)(LFS)nanoparticles as a second phase,TE/MC nanocomposites xLFS/BST(x=0.1%,0.2%,0.3% and 0.4%)were synthesized using spark plasma sintering method.The atomic-resolution interfacial structures demonstrate that Te vacancies originating from LFS-BST interfacial reaction decreases the hole concentration of the LFS/BST nanocomposites and enhances the Seebeck coefficient.The LFS/BST nanocomposites exhibit lower thermal conductivity due to enhanced phonon scattering by interfaces and defects.All the nanocomposites have higher ZT than BST matrix,with 0.2% LFS/BST nanocomposite achieving highest ZT=1.11 at 380 K.At working current 1.4 A,the device fabricated using 0.2% LFS/BST nanocomposite achieves maximal cooling temperature 4.9 K,which is 58% higher than the matrix.Moreover,the MC properties are retained in all the nanocomposites,which make them a promising candidate to achieve high TE performance and dual TE/MC properties for future applications.

Pressure induced convergence of conduction bands in Al doped Mg_(2)Si: Experiment and theory

High-pressure and high-temperature(HPHT)synthesis provides an effective way to tune the band structure of materials and improve their electronic properties.To investigate the influence of synthesis pressure on electronic properties,Mg_(1.97)Al_(0.03)Si samples were synthesized using the HPHT method.The maximum effective mass 0.92me is obtained for the sample prepared with the synthesis pressure of 3 GPa,leading to the biggest Seebeck coefficient
201.3 mV/K at room temperature.Meanwhile,the 3 GPa sample obtains the higher electron carrier concentration and electrical conductivity,resulting in nearly overall enhancement of power factor.The Density Functional Theory(DFT)calculations evidences that the Conduction Bands Minimum(CBM)can be tuned effectively by applied pressure and the convergence of the CBM leads to a larger effective mass of DOS,which are beneficial to the enhancement of power factors.These results indicate that high-pressure is a powerful tool to tune Mg_(1.97)Al_(0.03)Si band structures.

Thermoelectric transport properties and structure of Mg_2Si_(0.8)Sn_(0.2)prepared by ECAS under different current intensities

Thermoelectric materials Mg2Si0.8Sn0.2 were sintered under three different conditions including no electricity sintering（NCS）, low electricity sintering（LCS）,and high electricity sintering（HCS）. Thermoelectric performance and microstructure of three group samples were measured and compared. The results indicate that the application of electric current during the sintering process changes the microstructure and significantly increases the density of samples, and increases the electric conductivity and the power factor. The electric current activated/assisted sintering is an effective way to obtain thermoelectric materials with excellent performance.