Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire...Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.展开更多
Using a transient thermoreflectance （TTR） technique, several Au films with different thicknesses on glass and SiC substrates are measured for thermal characterization of metMlic nano-films, including the electron ph...Using a transient thermoreflectance （TTR） technique, several Au films with different thicknesses on glass and SiC substrates are measured for thermal characterization of metMlic nano-films, including the electron phonon coupling factor G, interfazial thermal resistance R, and thermal conductivity Ks of the substrate. The rear heating-front detecting （RF） method is used to ensure the femtosecond temporal resolution. An intense laser beam is focused on the rear surface to heat the film, and another weak laser beam is focused on the very spot of the front surface to detect the change in the electron temperature. By varying the optical path delay between the two beams, a complete electron temperature profile can be scanned. Different from the normally used single-layer model, the double-layer model involving interfaciM thermal resistance is studied here. The electron temperature cooling profile can be affected by the electron energy transfer into the substrate or the electron-phonon interactions in the metallic films. For multiple-target optimization, the genetic algorithm （GA） is used to obtain both G and R. The experimental result gives a deep understanding of the mechanism of ultra-fast heat transfer in metals.展开更多
Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT ...Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT of VO_(2)thin film is important for the applications of this material in various devices.Here,the changes in thermal conductivity of epitaxial and polycrystalline VO_(2)thin film across MIT are probed by the time-domain thermoreflectance(TDTR)method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_(2)film to attenuate the impact from extra thermal interfaces.It is demonstrated that the method is feasible for the VO_(2)films with thickness values larger than 100 nm and beyond the phase transition region.The observed reasonable thermal conductivity change rates across MIT of VO_(2)thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate,which is different from the reported behavior of single crystal VO_(2)nanowires.The recovery of the relationship between thermal conductivity and electrical conductivity in VO_(2)film may be attributed to the increasing elastic electron scattering weight,caused by the defects in the film.This work demonstrates the possibility and limitation of investigating the thermal properties of VO_(2)thin films by the TDTR method without depositing any metal thermoreflectance layer.展开更多
利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。...利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。栅极、漏极和源极的温度幅度有着非常明显的差距,器件表面以栅为中心呈现较大的温度分布梯度。器件表面栅金属温度变化幅度最高、变化速度最快,其主要温度变化发生在5μs之内。经过仔细分析,器件各部位温度差异的主要原因是器件的传热方向、不同区域与发热点的距离。展开更多
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61604049)the Shenzhen Municipal Research Project(Grant No.JCYJ20160531192714636)
文摘Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50730006,50976053,and 50906042)
文摘Using a transient thermoreflectance （TTR） technique, several Au films with different thicknesses on glass and SiC substrates are measured for thermal characterization of metMlic nano-films, including the electron phonon coupling factor G, interfazial thermal resistance R, and thermal conductivity Ks of the substrate. The rear heating-front detecting （RF） method is used to ensure the femtosecond temporal resolution. An intense laser beam is focused on the rear surface to heat the film, and another weak laser beam is focused on the very spot of the front surface to detect the change in the electron temperature. By varying the optical path delay between the two beams, a complete electron temperature profile can be scanned. Different from the normally used single-layer model, the double-layer model involving interfaciM thermal resistance is studied here. The electron temperature cooling profile can be affected by the electron energy transfer into the substrate or the electron-phonon interactions in the metallic films. For multiple-target optimization, the genetic algorithm （GA） is used to obtain both G and R. The experimental result gives a deep understanding of the mechanism of ultra-fast heat transfer in metals.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61825102,51872038,and 52021001)the“111”Project,China(Grant No.B18011).
文摘Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT of VO_(2)thin film is important for the applications of this material in various devices.Here,the changes in thermal conductivity of epitaxial and polycrystalline VO_(2)thin film across MIT are probed by the time-domain thermoreflectance(TDTR)method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_(2)film to attenuate the impact from extra thermal interfaces.It is demonstrated that the method is feasible for the VO_(2)films with thickness values larger than 100 nm and beyond the phase transition region.The observed reasonable thermal conductivity change rates across MIT of VO_(2)thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate,which is different from the reported behavior of single crystal VO_(2)nanowires.The recovery of the relationship between thermal conductivity and electrical conductivity in VO_(2)film may be attributed to the increasing elastic electron scattering weight,caused by the defects in the film.This work demonstrates the possibility and limitation of investigating the thermal properties of VO_(2)thin films by the TDTR method without depositing any metal thermoreflectance layer.
文摘利用具备亚微米量级空间分辨率和纳秒级时间分辨率的热反射测温技术对工作在脉冲偏置条件下的CGH4006P型Ga N HEMT进行了瞬态温度检测。测量了Ga N器件表面栅极、漏极和源极金属各部位在20μs内的瞬态温度幅度、分布及变化速度等数据。栅极、漏极和源极的温度幅度有着非常明显的差距,器件表面以栅为中心呈现较大的温度分布梯度。器件表面栅金属温度变化幅度最高、变化速度最快,其主要温度变化发生在5μs之内。经过仔细分析,器件各部位温度差异的主要原因是器件的传热方向、不同区域与发热点的距离。
基金The National Basic Research Program of China(973 Program)(No.2011CB707605)the National Natural Science Foundation of China(No.51205061,50925519,51106029)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK2012340)the Ph.D.Programs Foundation of Ministry of Education of China(No.20110092120006)
