Temperature effect in thermosonic wire bonding

The temperature effect on bonding strength and ultrasonic transmission in a PZT transducer system was investigated. The results show that, the temperature change influences the material features of the bonding interface, such as elastic modulus, tensile strength of gold ball and Ag substrate, which results in different bonding strengths. Moreover, the temperature change also influences the impedance and dissipative ultrasonic energy in the PZT system. The current signal of PZT transducer was analyzed by join time-frequency analysis, which can reveal the current change in a bonding process more clearly and completely. The analysis shows that the bonding parameters influence mutually. These results can help build some criteria for parameter match and optimization in wire bonding processes.

Ultrasonic power features of wire bonding and thermosonic flip chip bonding in microelectronics packaging

The driving voltage and current signals of piezoceramic transducer (PZT) were measured directly by designing circuits from ultrasonic generator and using a data acquisition software system. The input impedance and power of PZT were investigated by using root mean square (RMS) calculation. The vibration driven by high frequency was tested by laser Doppler vibrometer (PSV-400-M2). And the thermosonic bonding features were observed by scanning electron microscope (JSM-6360LV). The results show that the input power of bonding is lower than that of no load. The input impedance of bonding is greater than that of no load. Nonlinear phase, plastic flow and expansion period, and strengthening bonding process are shown in the impedance and power curves. The ultrasonic power is in direct proportion to the vibration displacement driven by the power, and greater displacements driven by high power (>5 W) result in welding failure phenomena, such as crack, break, and peeling off in wedge bonding. For thermosonic flip chip bonding, the high power decreases position precision of bonding or results in slippage and rotation phenomena of bumps. To improve reliability and precision of thermosonic bonding, the low ultrasonic power (about 1-5 W) should be chosen.

Effect of Conduction Pre-heating in Au-Al Thermosonic Wire Bonding

This paper presents the recent study by investigating the vital responses of wire bonding with the application of conduction pre-heating. It is observed through literature reviews that, the effect of pre-heating has not been completely explored to enable the successful application of pre-heating during wire bonding. The aim of wire bonding is to form quality and reliable solid-state bonds to interconnect metals such as gold wires to metalized pads deposited on silicon integrated circuits. Typically, there are 3 main wire bonding techniques applied in the industry;Thermo-compression, Ultrasonic and Thermosonic. This experiment utilizes the most common and widely used platform which is thermosonic bonding. This technique is explored with the application of conduction pre-heating along with heat on the bonding site, ultrasonic energy and force on an Au-Al system. Sixteen groups of bonding conditions which include eight hundred data points of shear strength at various temperature settings were compared to establish the relationship between bonding strength and the application of conduction pre-heating. The results of this study will clearly indicate the effects of applied conduction pre-heating towards bonding strength which may further produce a robust wire bonding system.

A Single Mode Hybrid Ⅲ-Ⅴ/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection

A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.

Effect of ultrasonic power and bonding force on the bonding strength of copper ball bonds

Copper wire, serving as a cost-saving alternative to gold wire, has been used in many high-end thermosonic ball bonding applications. In this paper, the bond shear force, bond shear strength, and the ball bond diameter are adopted to evaluate the bonding quality. It is concluded that the ef/~cient ultrasonic power is needed to soften the ball to form the copper bonds with high bonding strength. However, excessive ultrasonic power would serve as a fatigue loading to weaken the bonding. Excessive or less bonding force would cause cratering in the silicon.

Atomic diffusion properties in wire bonding

The lift-off characteristics at the interface of thermosonic bond were observed by using scanning electron microscope (JSM-6360LV). The vertical section of bonding point was produced by punching, grinding and ion-sputter thinning, and was tested by using transmission electron microscope (F30). The results show that the atomic diffusion at the bonded interface appears. The thickness of Au/Al interface characterized by atomic diffusion is about 500 nm under ultrasonic and thermal energy. The fracture morphology of lift-off interface is dimples. The tensile fracture appears by pull-test not in bonded interface but in basis material, and the bonded strength at interface is enhanced by diffused atom from the other side.

MICROSTRUCTURE CHARACTERISTICS AT THE BOND INTERFACE

Lift-off and section characteristics at the interface of thermosonic bond are observed by using scanning electron microscope （KYKY2800） with EDS-test. Results show that the peeling underdeveloped bonds simulate atorns （or doughnut） with an unbonded central region and ridged peripheral region is bonded hardly, Inside roundness at flip chip bonding center are discovered. Bond strength is located between the severely ridged periphery and the non-adhering central area of the bond. For constant force and time, the ridged area of the bond pattern increases when more power is applied. For constant force and power, the ridged location of the bonded region moves closer to the bond center with time. Results of EDS-tests at Au-Al and Au-Ag interfaces show that Kirkendall diffusibility at Au-Ag interface occur and the diffusing speed of Au-atomic is faster than that of Ag, and that intermetallic compounds at Au-Al interface is generated possibly. And these would be helpful for further research about thermosonic bonding.

GaAs芯片上倒装Si芯片的金凸点高度与键合工艺参数优化

随着射频集成电路向小型化、高集成方向发展,基于金凸点热超声键合的芯片倒装封装因凸点尺寸小、高频性能优越成为主流技术之一。以GaAs芯片上倒装Si芯片的互连金凸点为研究对象,通过有限元仿真方法,分析了温度和剪切力作用下不同高度金凸点的等效应力,得到金凸点的最优高度值。通过正交试验,研究键合工艺参数(压力、保持时间、超声功率、温度)对金凸点高度和键合强度的影响规律。通过可靠性试验,验证了工艺优化后倒装焊结构的可靠性。结果表明:键合工艺参数对凸点高度的影响排序为压力>超声功率>温度>保持时间,对剪切力的影响排序为压力>超声功率>保持时间>温度。

Indium bump array fabrication on small CMOS circuit for flip-chip bonding

We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/A1GaAs multiple quantum well spatial light modulator. A chip holder with a via hole is used to coat the photoresist for indium bump lift-off. The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500 μm, which ensures the integrity of the indium bump array. 64 - 64 indium arrays with 20 μm-high, 30 μm-diameter bumps are successfully formed on a 5 - 6.5 mm^2 CMOS chip.

热超声键合换能系统阻抗/导纳模型

采用等效电路方法建立换能系统的阻抗/导纳集总参数模型,包含各子部分的材料特性、尺寸、系统损耗因子、谐振频率、激励电信号以及不同负载下系统阻抗和导纳等动力学特性。以无键合工具与有键合工具两种不同负载为例计算得到,在100kHz范围内系统包含4阶轴向谐振频率:相比于无键合工具条件,有链合工具负载条件下的各阶谐振频率增大,其电阻值增大,电导值降低。阻抗分析仪试验与有限元分析结果均验证系统阻抗/导纳模型的正确性。

热超声键合PZT阻抗和功率动态特性研究

鉴于热超声芯片封装工艺的键合点空间高度局部化和时间瞬态性等特点,通过分析系统前端PZT阻抗和功率的动态变化规律,研究了芯片金球凸点与基板的键合过程及键合质量。结果表明:对于恒压源的键合系统,PZT换能器电流、阻抗及功率信号可表征键合过程的动态变化,且可将金球凸点与基板键合过程分为初始、平稳、结束三个阶段;键合环境的变化反映在PZT阻抗和功率变化之中,且PZT阻抗和功率与键合强度存在直接关系。试验及分析表明,PZT换能器阻抗和功率变化反映了金球凸点与基板键合过程及键合质量的差别,可用以分析整个键合系统。

热超声引线键合换能系统振动特性仿真研究

在建立热超声引线键合换能系统各子部分运动方程的基础上,利用有限元方法建立空载情况下换能系统的振动特性仿真模型,并采用正弦扫频方法验证仿真模型。结果表明:换能系统以第2阶变幅杆轴向振动与劈刀径向振动的模态作为其工作状态下的主振型;换能系统工作频率附近包含多种振动模态,键合过程极易被激发而表现出多模态性,由此会消耗部分超声能量且对芯片键合界面造成负面影响,这些振动模态必须得到抑制;仿真计算与试验结果相吻合,其中工作频率的相对误差只有1.2%。

温度因素对热超声键合强度的影响实验研究

主要研究了热超声键合过程中环境温度对键合强度的影响规律。分析了键合强度与键合温度之间的关系。实验研究发现,最佳键合“窗口”出现在200～240℃,此时键合强度可达20g左右。对推荐使用的大于5.4g的键合强度标准,本实验条件下可键合“窗口”为120～360℃。这些实验现象和分析结果为后期的键合参数匹配规律和系统动态特性研究打下基础。

压力约束模式下热超声倒装键合的试验

在采用压力约束模式夹持倒装芯片的条件下,实现了热超声倒装键合。通过观测键合过程中的输入超声功率、工具末端和芯片的振幅变化情况,研究了压力约束模式下不同键合参数对键合过程和键合强度的影响规律。试验结果表明:在这种约束模式下,键合力和功率对键合强度具有重要的影响;键合力对金凸点的变形是决定性的;键合强度与输入的超声能量总量有关,过小和过大的超声能量都不能形成好的键合强度,高强度的键合并不需要大的超声功率输入,键合过程中能量主要耗散于工具/芯片间相对运动导致的摩擦做功,并造成了芯片和工具的磨损。

芯片键合换能系统中接触界面的影响分析

接触界面对超声能量传递与振动特性的影响是各类压电换能器的共性问题。在超声芯片封装领域,各子部分之间的接触界面是影响系统超声能量传递的强非线性因素,直接影响芯片与基板的键合质量。该文通过有限元法与激光多谱勒测振仪等技术,获得系统中接触界面对超声能量传递与振动特性的影响规律,发现不合理的接触界面会引发系统多模态与频率混叠效应、超声能量输出不稳定、系统迟滞响应等,导致键合强度下降、芯片与基板倾斜、键合效率下降等封装缺陷。研究结果对理解超声键合与系统设计具有指导意义。

热超声键合压电换能器的动力学特性

基于有限元方法和试验测试,研究了芯片封装用压电超声换能器的动力学特性。借助ANSYS压电耦合和非线性接触分析功能,对换能器自由和约束状态下的振动特性进行了分析。探讨了超声能量在空间域、时域和频域的传递规律。由模态分析得到换能器的振动形式,通过谐响应分析提取其在正弦电压激励下的振动信息,经瞬态分析获得换能器的瞬态响应。结果表明,螺栓径向尺寸和预紧力影响换能器的模态分布和动态特性,压电晶堆加载电压的频率影响超声能量传递特性。通过键合试验考察了焊点质量与螺栓径向尺寸的关系。分析和试验结果为换能器设计和键合工艺优化提供了指导。

热超声倒装键合机视觉系统的设计与实现

针对热超声倒装键合过程中对准工作的特点,确定合理的视觉自动对准方案,在对多种颜色和形状的LED光源进行实验对比的基础上,设计环形LED光源与单个LED发光二极管组合的照明方式,使芯片、基板表面亮度一致且表面几何特征清晰。视觉软件以HexSight为核心,利用创建参考点实现不同目标的识别,并对2个CCD摄像机的控制方案进行优化。通过分析多次识别结果对单项误差进行评估,并以实验用1 mm×1 mm的表面有8个凸点的芯片为例计算视觉识别系统的综合误差,结果表明此视觉识别系统满足芯片键合时对定位精度的要求。

热超声键合换能系统振动多模态分析

研究了换能系统的振动多模态性及其对键合质量的影响。利用激光多谱勒测振仪提取变幅杆和工具末端各特征点的速度信号,发现换能系统的运动为多种模态耦合的结果,并得到各非主模态与主模态的速度比值,其中非主模态以垂直弯曲振动为主。这种垂直弯曲振动对芯片造成“拍击”的负面效应,从而影响多凸点与基板的键合面积、键合强度以及芯片与基板的平行度。利用FEM方法分析系统多模态产生的原因,并提出抑制方法。

热超声键合过程中键合力波动特性仿真研究

利用有限元分析方法研究了在铜金属化晶片上进行金引线热超声键合过程中的键合力变化情况,建立了基于率相关材料特性的热超声键合有限元模型,对键合中的碰撞和超声两个过程进行了仿真分析,并引入平均键合力、键合力标准差值等统计参量来判定键合力的波动变化,从而更加准确地揭示了各键合参数对键合力波动的影响规律.研究结果表明:碰撞初速度(v0)、超声时间或键合温度的增加,均会使得键合力的波动加剧,不利于键合力的控制;对于v1/v0(v1为劈刀速度)则存在一个合适的值,可以使得键合力的波动变化最小.

热超声倒装键合中基于视觉的芯片高精度定位控制

针对自行研制的热超声倒装芯片键合机,建立了基于视觉的芯片定位控制系统,运用图像识别及处理算法对芯片的位置进行实时检测,并结合PID控制方法实现了平台的精确位置控制。实验结果表明,基于视觉的芯片定位控制系统能很好地完成芯片与基板的高精度键合定位。