Interaction of RuO₂and Lead-Silicate Glass in Thick-Film Resistors

Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.

Hybrid functional IrO_2-TiO_2 thin film resistor prepared by atomic layer deposition for thermal inkjet printheads

IrO2-TiO2 thin films were prepared by atomic layer deposition using Ir（EtCp）（COD） and titanium isopropoxide （TTIP）. The resistivity of IrO2-TiO2 thin films can be easily controlled from 1 500 to 356.7 μΩ·cm by the IrO2 intermixing ratio from 0.55 to 0.78 in the IrO2-TiO2 thin films. The low temperature coefficient of resistance（TCR） values can be obtained by adopting IrO2-TiO2 composite thin films. Moreover, the change in the resistivity of IrO2-TiO2 thin films was below 10% even after O2 annealing process at 600 ℃. The step stress test results show that IrO2-TiO2 films have better characteristics than conventional TaN08 heater resistor. Therefore, IrO2-TiO2 composite thin films can be used as a heater resistor material in thermal inkjet printhead.

Preparation of Lead-free Thick-film Resistor Pastes

The preparation of lead-free thick-film resistors are reported:using RuO 2 and ruthenates as conductive particles,glass powders composed of B 2 O 3,SiO 2,CaO and Al2 O 3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al 2 O 3 substrates,and then sintering in a belt furnace.X-ray diffraction(XRD) and electron scanning microscopy(SEM) have been used to characterize the conductive particles.The resistors exhibit good refiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80Ω/□ to 600Ω/□.The resistors prepared are qualified for common use.

Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance

High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...

Failure Behaviors and Mechanisms of High-Ohmic Resistors Protected by PF/EP Paint in Heat and Humid Environment

Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of bandlike resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH^- ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH^- ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH^- ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.

Formation of epitaxial Tl_2Ba_2Ca_2Cu_3O_(10) superconducting films by dc-magnetron sputtering and triple post-annealing method

For obtaining pure phase T12Ba2Ca2Cu3O10 （T1-2223） films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, T12Ba2CaCu2O8 （T1-2212） is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared T1-2212 inter-phase is converted into T1-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of T1-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction （XRD） θ-2θ scans, 09 scans and rotational φ scans show that each of the T1-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy （SEM）. The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.

PF/EP/Nano-SiO_2 Composite Paint for Resistor

Phenolic resin(PF) and nano-SiO2 were used to improve the curing property and high humidity resistance of epoxy resin (EP) and methyl nadic anhydride (MNA) resistor paint, respectively. Hydrogen bonds, formed between phenolic resin and nano-SiO2 in alcohol, made nano-SiO2 disperse easily in EP/MNA paint through phenolic resin without being treated by supersonic vibration. When the mass ratio of PF to EP in paint is 3:7, the formed composite paint film can be cured in 2 min at 170 ℃ . When the mass ratio of nano-SiO2 to PF in paint is 3:100, the property of high humidity resistance of the composite paint is the best, meeting the requirement of varying ratio of resistance less than 0.1% after experiment on high humidity resistance. SEM analysis shows the surface of the composite paint film is smooth, glassy, tight and homogeneous, without acicular air holes.

Transparent and anti-fogging AlPO_(4)-5 films constructed by oblique oriented nano-flake crystals

In the present work,transparent and anti-fogging AlPO_(4)-5 films were prepared on glass substrates using a novel developed process.The process entails a simple in-situ sol–gel followed by vapor phase transport.The in-situ sol–gel process was implemented by coating the precursor sols for the synthesis of AlPO4-5 on the glass substrates successively using the spin-coating method.The films and powders scribed from the films were characterized by X-Ray diffraction(XRD),Fourier transform infrared spectroscopy(FT-IR),scanning electron microscope(SEM),atomic force microscope(AFM),X-ray photoelectron spectroscopy and transmission electron microscope(TEM).The unique films were composed of oblique oriented nanoflake AlPO_(4)-5 crystals with the thickness of about 20 nm.The formation of nano-flake crystals can be ascribed to the high concentration of the precursors,resulting in the formation of a supersaturation system.The obtained films showed high antifogging performance due to the superhydrophilicity with a water contact angle of lower than 1.0°.The silicone oil contact angle was also low about 8.2°.In addition,heteroatom-substituted AlPO_(4)-5 films showing different colors can be obtained easily by simply adding transition metal ions in the phosphate acid solution during the preparation that can extend the application of the method for different coating demand.

The EVA plastic film for V-process and steel castings by V-process in China

EVA plastic film is the key material for V-process. Through decades of research, special EVA film for V-process has been produced. The film has adequate elongation; its maximum is about 800% in longitudinal direction and 750% in transversal direction. The single width of the film is 2.8 m and the double width is 5.6 m, which is the widest sheet film for V-process in China. Sheets with different thickness ranging from the thickest 0.35 mm to the thinnest 0.08 mm can meet different demands in China. The film can be used not only for V-process of iron castings, but also for the manganese steel railway frog, steel rocking support and side frame castings for train and the steel bridge box for engine truck.

Enhancing superconductivity of ultrathin YBa2Cu3O7-δ films by capping non-superconducting oxides

In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO3 has only a negligible effect on the properties of YBCO. In contrast, we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO. PrBa2 Cu3 O7,La2 CuO4, LaMnO3, SrTiO3, and LaAlO3 have been examined as capping layers, and the minimum thickness of superconducting YBCO with capping is ~ 2 unit cells–3 unit cells. This result might be useful in constructing good-performance YBCO-based field effect devices.

Synthesis of New Multibranch Chromophores with Strong Light-emitting in Solution and in PMMA Film

Three new chromophores with triphenylamine as molecular focal point bearing one, two, or three 4-(n-butyloxystyryl) group(s) at the periphery respectively, (named as T1, T2, and T3) have been synthesized and characterized. It is interesting to find that the fluorescence quantum yield increases from T1 (0.489), to T3 (0.535), and to T2 (0.628) in cyclohexane, meanwhile the lifetime for T3 is shorter than T1 and T2, which is an important characteristic for applications in light emitting diode. Also PMMA (polymethyl methacrylate) film doped with T3 gives stronger fluorescence than T1, and T2. Cyclic voltammetry showed that T3 exhibited lowest oxidation potential of 0.52 V vs SCE, suggesting its better hole-transport property.

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)

The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.

MICROSTRUCTURAL CHANGE OF YSZ-SUPPORTED YBaCuO SUPPERCONDUCTING FILM BY PROTON BEAM BOMBARDMENTS

Microstructural change of YBaCuO film/YSZ substrate with and without proton irradiation has been studied by scanning electron microscope and X- ray diffraction techniques. Structural analysis has shown that conversion from tetragonal to orthorhombic phases, reduction of nonsuperconducting phase and preferential rearrangement of crystal grains are all favorable to the improvement of superconductivity in the YBaCuO film supported by YSZ substrate by proton beam bombardment.

Growth and transport features of electron-doped superconductor Pr_(1-x)LaCe_xCuO_(4-δ) thin films

Tt-phase electron-doped superconductor Pr1-xLaCexCuO4-δ（PLCCO） thin films are successfully prepared on SrTiOs （100） substrates by using the dc magnetron sputtering method. It is found that the films each have a highly oriented structure along the c-axis. For optimally doped films with x ≈ 0.10, the superconducting transition temperature Tc is 25.5 K, which is similar to that of a single crystal. The quadratic temperature dependence of the resistivity is observed when T 〉 To, which can be attributed to the two-dimensional Fermi liquid behaviour. Besides, the optimal conditions for preparing the T1-phase PLCCO thin films are also discussed in detail.

Preparation of c-Axis Oriented LiNb_(1-x) Ta_xO_3 Films on Si(111) Substrates by a Modified Sol-gel Process

In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substrates was improved by adding a 33% aqueous solution of CH 3CH 2OH to the mixed sols of LiNb(OCH 2CH 3) 6 and LiTa(OCH 2CH 3) 6 . The crystallization behavior of LiNb 1- x Ta x O 3 films on Si(111) substrates has been studied. Highly c axis oriented LiNb 1- x Ta x O 3 films have been obtained within the tantalum composition range of \{0< x <0 33\}. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c axis oriented films.

High T_c HoBa_2Cu_3O_(7-δ) Thin Films Deposited on (100) Y_2O_3Stabilized ZrO_2 Substrates by Sputtering

Thin films of superconductors HoBa_2Cu_3O_(7-δ)(HBCO) were prepared by DC-sputtering technique. The epi-taxial growth was controlled by the ratio of the oxygen pressure and Ar pressure (O_2/Ar) , the subetrate temperature T_s and the distance of the target to subetrate. Thin films deposited under the optimum conditions (Po_2/P_(Ar)= 1:2 ; T_s=730℃) show a critical temlierature clase to 87K and a transition width less than 1K. X-raydiffraction analysis shows that the films are highiy c-axis oriented. Auger electron spectroscopy depth profilingdemonstrates Ho diffusion into the Zr(Y)O_2 subetrate owing to the Ho subetitution for Y.

IONIC CONDUCTIVITY OF POLY (β-ALKOXYCARBONYLETHYLMETHYLSILOXANE)-LiClO_4 CROSSLINKED FILMS

Poly (β-carboxyethylmethylsiloxane)-LiClO_4 and poly (β-alkoxylethylmethylsiloxane)-LiClO_4 crosslinked fllms have been prepared. The ionic conductivity of the films depends on the polymer species, concentration of lithium perchlorate, temperature and content of crosslinking agent. The effect of high polar organic solvent 1, 4-butyrolactone on the ionic conductivity and mechanical properties of poly (β-carhoxyethylmethylsiloxane )-LiClO_4 system was also investignied.

Water and nitrogen transport characteristics of single-line interference infiltration under film hole irrigation with muddy water and fertilizer

Based on the experimental data,this study investigated the effect of sand content of muddy water on water and nitrogen transport characteristics of the single-line interference infiltration under film hole irrigation with muddy water and fertilizer.The relationship between the single-line interference infiltration parameters,the sand content,the wetting front movement distances,and the sand content were all established.The model of the cumulative infiltration volume of per unit film pore area,the vertical and horizontal wetting front movement distance of the free surface,and the wetting front movement distance of the interference center with sand content and infiltration time were proposed.Reveal the law of the change of soil water content and the distribution of NO_(3)^(-)-N content based on different muddy water sand content.The results indicate that at the same infiltration time,as the muddy water sand content increases,the cumulative infiltration volume per unit pore area decreases.The infiltration index of the free infiltration and the single-line interference vary little when the sand content increases,mainly are around 0.64 and 0.58.The relationship between infiltration parameters a,b and the sand content is linear function.At the same location,the more the sand content,the smaller the wetting front movement distance in free surface and the single-line interference surface,the less the NO_(3)^(-)-N content.

Preparation of Y_(1-x)Ho_xBa_2Cu_3O_(7-δ) Superconductive Thin Films

Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu_3O_(7-δ)(YBCO) and half of HoBa_2Cu_3O_(7-δ)(HBCO) superconducting materials. As the distance between HBCO targetmaterial and substrate is varied , the Ho content in material is changed respectively. When the content of Ho is0. 7 (atom ratio) , the T_c>83K.