The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on th...The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET（modulation doped field effect transistor） for optimum DC and RF characteristics.展开更多
文摘The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas（2-DEG） density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET（modulation doped field effect transistor） for optimum DC and RF characteristics.
