Closed-form solution to thin-walled box girders considering effects of shear deformation and shear lag

Considering three longitudinal displacement functions and uniform axial displacement functions for shear lag effect and uniform axial deformation of thin-walled box girder with varying depths,a simple and efficient method with high precision to analyze the shear lag effect of thin-walled box girders was proposed.The governing differential equations and boundary conditions of the box girder under lateral loading were derived based on the energy-variational method,and closed-form solutions to stress and deflection corresponding to lateral loading were obtained.Analysis and calculations were carried out with respect to a trapezoidal box girder under concentrated loading or uniform loading and a rectangular box girder under concentrated loading.The analytical results were compared with numerical solutions derived according to the high order finite strip element method and the experimental results.The investigation shows that the closed-form solution is in good agreement with the numerical solutions derived according to the high order finite strip method and the experimental results,and has good stability.Because of the shear lag effect,the stress in cross-section centroid is no longer zero,thus it is not reasonable enough to assume that the strain in cross-section centroid is zero without considering uniform axial deformation.

The effect of deposition temperature on the intermixing and microstructure of Fe/Ni thin film

The physical vapour deposition of Ni atoms on α-Fe（001） surface under different deposition temperatures were simulated by molecular dynamics to study the intermixing and microstructure of the interracial region. The results indicate that Ni atoms hardly penetrate into Fe substrate while Fe atoms easily diffuse into Ni deposition layers. The thickness of the intermixing region is temperature-dependent, with high temperatures yielding larger thicknesses. The deposited layers are mainly composed of amorphous phase due to the abnormal deposition behaviour of Ni and Fe. In the deposited Ni-rich phase, the relatively stable metallic compound B2 structured FeNi is found under high deposition temperature conditions.

THE THINNING EFFECT OF ION IMPLANTATION

In this paper,we shall study in detail the change regularities of surface roughness parameters intwo and three dimensions under some implantation conditions.And a computer is used to calcu-late and analyze the topographies of the surfaces before and after ion implantation,therefore themechanism of the changes of surface topographies and that of wear resistance after implantationscan be understood further.

EFFECT OF SURFACE ENERGY ON DISLOCATION-INDUCED FIELD IN HALF-SPACE WITH APPLICATION TO THIN FILM-SUBSTRATE SYSTEMS

In this work the elastic field of an edge dislocation in a half-space with the effect of surface energy has been obtained. The elastic field is then used to study the image force on the dislocation, the critical thickness for dislocation generation in epitaxial thin films with strain mismatch and the yielding strength of thin films on substrates. The results show that the image forces on the dislocation deviate from the conventional solutions when the distance of the dislocation from the free surface is smaller than several times of the characteristic length. Also due to the effect of surface energy, the critical thickness for dislocation generation is smaller than that predicted by the conventional elastic solutions and the extent of the deviation depends on the magnitude of mismatch strain. In contrast, the effect of surface energy on the yielding strength for many practical thin films can be neglected except for some soft ones where the characteristic length is comparable to the thickness.

INVESTIGATION ON THIN－WALL EFFECT OF A DIRECTIONALLY SOLIDIFIED SUPERALLOY BY USING TUBULAR SPECIMENS

The thin-wall effect of DZ25G, a directionally solidified (DS) superalloy, has been studied by ustng tubular investment cast thin-wall specimens with shape and wall thickness near the air-cooled hollow blades.The results show that the stress-rupture properties of the thin-wall specimens (thickness 0.8, 1.2 and 1.6 mm) are equivalent to the standard ones (diameter 5 mm),i.e., under the experimental conditions in this study the alloy DZ25G has insignificant thin-wall effect. It is apparent that the resulte are different from previous work. In the paper the reasons resulting in the difference were discussion in terms of the specimen manufacture process and thus microstructure feature.

Study on superprism effect in the multilayer optical thin film stack

Researches show that multilayer optical thin film stack can exhibit superprism effect due to their large abnormal dispersions. We investigated and simulated this effect numerically in a 1-D non-periodic film structure-Fabry-Perot filters (FPF), which possess drastic change in phase and large group delay around wavelength of peak transmittance, and fabricated this device to realize remarkable superprism effect. We tested experimentally with the maximum spatial separation shift up to 65 μm, and the experimental result is in good agreement with the theory. Compared with the traditional prism, the total thickness of our structure is only 3.3 μm, and our prism shows a stronger angular resolution of 1.8°/nm.

Matching effect in superconducting NbN thin film with a square lattice of holes

A square hole array is fabricated over a micro-bridge of NbN thin film by electron beam lithography and reactive ion milling. Magneto-resistance is measured across the micro-bridge filled with a hole array near the superconducting transition temperature. It is found that magneto-resistance minima occur when the number of vortices is an integer multiple or a fractional multiple of the number of holes. The temperature and the current dependences of the matching effect are studied.

Origin of ultraviolet photovoltaic effect in Fe3O4 thin films

We have investigated the transport and ultraviolet photovoltaic properties of Fe3O4 thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe3O4 film under ultraviolet laser, since the energy gap of Fe3O4 is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

The spin Hall effect in single-crystalline gold thin films

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au(001) single crystal films via H-pattern devices,whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.

Frequency Effects of Fine Thin Layer

One of the most important research task in reservoir engineering now is to resolve the fine thin layer. What are the characteristics of the fine thin layer? This paper gives the answer in frequency domain. The frequency feature of fine thin layer set obtained is grating. The frequence effects of rhythmic thin layer, on the other hand, is different from those of graded thin layer; the grating effect of fine layer is affected by several factors, but the thickness and its inner layer number are the most predominant factors over others affecting grating effect.

Size Effects of the Critical Temperature in Ferroelectric Thin Films

The size effects of the critical behaviors for the systems of interacting spins are discussed extensively inliterature.In this paper,the finite-size dependence of the critical temperature and susceptibility of the ferroelectric thinfilm are investigated numerically based on the four-state Potts model with the nearest-neighbor interactions between thedipole moments.The four orientations of the domains exist in the ferroelectric film and the movement of the domainwalls determines the polarization switching process besides the boundary conditions of the film.The critical exponentsare obtained and our investigations show that the boundary conditions play the important roles for the ferroelectricproperties of the thin films and the critical behavior of the thin films strongly depends on the feature of the surface.

EFFECTS OF MASS TRANSFER ON THE THINNING AND RUPTURE OF A PLANE PARALLEL LIQUID FILM

The effects of mass transfer and physical properties upon the thinning and rupture of adraining plane parallel film are investigated.An equation is derived in which the thinning rate is afunction of bulk properties.surface properties(surface tension,surface viscosities,and the variationof surface tension with surface concentration),intermolecular forces(London-van der Waals forcesand electrostatic double layer forces),adsorption and surface diffusion coefficients,bubble size andfilm thickness.An estimation for the critical thickness at which a film rupture is carried out and thecoalescence time is obtained by integration to the critical thickness,The coalescence time is predictedas a function of bulk and surface properties,London-van der forces,adsorption and surfacediffusion coefficients,and bubble size.

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

An obvious weak localization correction to anomalous Hall conductance（AHC） in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response.

A STUDY ON THE EFFECT OF RADIAL INERTIA ON THE ELASTO-PLASTIC COMBINED STRESS WAVE PROPAGATION IN THIN-WALLED TUBES

An in-depth analysis of propagation characteristics ofelasto-plastic combined stress waves in circular thin-walled tubeshas been made. In obtaining the simple-wave solution, however, mostresearches have ignored the influence of the circumferential stressrelated to the radial inertial ef- fect in the tubes. In this paperthe incremental elasto-plastic constitutive relations which areconve- nient for dynamic numerical analysis are adopted, and thefinite-difference method is used to study the evolution adpropagation of elasto-plastic combined stress waves in a thin-walledtube with the radial inertial effect of the tube considered. Thecalculation results are compared with those obtained when the radialinertial effect is not considered. The calculation results show thatthe radial inertial effect of a tube has a fairly great influence onthe propagation of elasto-plastic combined stress waves.

Bauschinger and size effects in thin-film plasticity due to defect-energy of geometrical necessary dislocations

The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations （GNDs） are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations （or pile-ups） moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.

Irradiation effects of graphene and thin layer graphite induced by swift heavy ions

Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the 'blue shift' of 2D bond and the 'red shift' of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).

Effect of slip velocity on Casson thin film flow and heat transfer due to unsteady stretching sheet in presence of variable heat flux and viscous dissipation

The aim of the present paper is to study flow and heat transfer charac- teristics of a viscous Casson thin film flow over an unsteady stretching sheet subject to variable heat flux in the presence of slip velocity condition and viscous dissipation. The governing equations are partial differential equations. They are reduced to a set of highly nonlinear ordinary differential equations by suitable similarity transformations. The re- sulting similarity equations are solved numerically with a shooting method. Comparisons with previous works are macle, and the results are found to be in excellent agreement. In the present work, the effects of the unsteadiness parameter, the Casson parameter, the Eckert number, the slip velocity parameter, and the Prandtl number on flow and heat transfer characteristics are discussed. Also, the local skin-friction coefficient and the local Nusselt number at the stretching sheet are computed and discussed.