The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films ...The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600oC. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fab- ricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN with- out presence of elemental gallium and Ga2O3 in this film.展开更多
ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to...ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with precursor molarity of ZnO thin films. The ZnO films exhibit higher electrical n-type semiconductors, whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M. The maximum value of electrical conductivity of the films is 7.96 （S2.cm）-1 obtained in the ZnO thin film for precursor molarity 0.125 M. The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1% in the higher conductivity.展开更多
This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 ...This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2：F thin films were deposited at a 350 ℃ pending time （5, 15, 60 and 90 s）. The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2：F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 （Ω.cm）-1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2：F thin films deposited by ultrasonic spray was reported.展开更多
SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 × 10^-4 Pa （ 10^-6 Torr） on unheated glass substrates. The effect of thickness on the structural, morphological and optic...SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 × 10^-4 Pa （ 10^-6 Torr） on unheated glass substrates. The effect of thickness on the structural, morphological and optical properties of SnSb2S4 thin films was investigated. Films thickness measured by interference fringes method varied from 50 to 700 nm. X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness. The microstructure parameters： crystallite size, strain and dislocation density were calculated. It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness. In addition, by increasing the film thickness, an enhancement in the surface roughness root-mean-square （RMS） increased from 2.0 to 6.6 nm. The fundamental optical parameters like band gap, absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum. The optical absorption measurements indicated that the band （Eg） gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness. The refractive indexes were evaluated in transparent region in terms of envelope method, which was suggested by Swanepoul. It was observed that the refractive index increased with increasing film thickness.展开更多
This paper examines the growth of ZnO thin films on glass substrate at 350 ℃ using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and e...This paper examines the growth of ZnO thin films on glass substrate at 350 ℃ using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are （002） oriented. The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Ω.cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 ℃ has been reported.展开更多
Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique.Conditions of preparation have been optimized to get good quality.A set of aluminum（Al） doped ZnO（between 0 and 5 wt%） th...Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique.Conditions of preparation have been optimized to get good quality.A set of aluminum（Al） doped ZnO（between 0 and 5 wt%） thin films were grown on glass substrate at 350℃.Nanocrystalline films with a hexagonal wurtzite structure show a strong（002） preferred orientation.The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%.All the films have low absorbance in the visible region,thus the films are transparent in the visible region;the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%.The electrical conductivity of the films increased from 7.5 to 15.2（Ω·cm）^（-1）.So the best results are achieved in Al doped ZnO film with 3 wt%.展开更多
文摘The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600oC. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fab- ricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN with- out presence of elemental gallium and Ga2O3 in this film.
文摘ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with precursor molarity of ZnO thin films. The ZnO films exhibit higher electrical n-type semiconductors, whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M. The maximum value of electrical conductivity of the films is 7.96 （S2.cm）-1 obtained in the ZnO thin film for precursor molarity 0.125 M. The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1% in the higher conductivity.
文摘This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2：F thin films were deposited at a 350 ℃ pending time （5, 15, 60 and 90 s）. The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2：F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 （Ω.cm）-1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2：F thin films deposited by ultrasonic spray was reported.
文摘SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 × 10^-4 Pa （ 10^-6 Torr） on unheated glass substrates. The effect of thickness on the structural, morphological and optical properties of SnSb2S4 thin films was investigated. Films thickness measured by interference fringes method varied from 50 to 700 nm. X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness. The microstructure parameters： crystallite size, strain and dislocation density were calculated. It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness. In addition, by increasing the film thickness, an enhancement in the surface roughness root-mean-square （RMS） increased from 2.0 to 6.6 nm. The fundamental optical parameters like band gap, absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum. The optical absorption measurements indicated that the band （Eg） gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness. The refractive indexes were evaluated in transparent region in terms of envelope method, which was suggested by Swanepoul. It was observed that the refractive index increased with increasing film thickness.
文摘This paper examines the growth of ZnO thin films on glass substrate at 350 ℃ using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are （002） oriented. The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Ω.cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 ℃ has been reported.
文摘Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique.Conditions of preparation have been optimized to get good quality.A set of aluminum（Al） doped ZnO（between 0 and 5 wt%） thin films were grown on glass substrate at 350℃.Nanocrystalline films with a hexagonal wurtzite structure show a strong（002） preferred orientation.The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%.All the films have low absorbance in the visible region,thus the films are transparent in the visible region;the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%.The electrical conductivity of the films increased from 7.5 to 15.2（Ω·cm）^（-1）.So the best results are achieved in Al doped ZnO film with 3 wt%.
