Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorpho...Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·n H2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2h, RuO2·n H2O electrode surface gains mass of2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly20% with voltage scan rate increasing from 5 to 250 m V/s.展开更多
基金Project(S2013040015492)supported by the Natural Science Foundation of Guangdong Province,ChinaProject(2007AA03Z240)supported by Hi-tech Research and Development Program of China
文摘Ru O2·n H2O film was deposited on tantalum foils by electrodeposition and heat treatment using Ru Cl3·3H2O as precursor.Surface morphology, composition change and cyclic voltammetry from precursor to amorphous and crystalline RuO2·n H2O films were studied by X-ray diffractometer, Fourier transformation infrared spectrometer, differential thermal analyzer, scanning electron microscope and electrochemical analyzer, respectively. The results show that the precursor was transformed gradually from amorphous to crystalline phase with temperature. When heat treated at 300 °C for 2h, RuO2·n H2O electrode surface gains mass of2.5 mg/cm2 with specific capacitance of 782 F/g. Besides, it is found that the specific capacitance of the film decreased by roughly20% with voltage scan rate increasing from 5 to 250 m V/s.
