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STUDY ON DIAMOND LIKE CARBON THIN FILM BY FILTERED VACUUM ARC DEPOSITION
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作者 朱纪军 左敦稳 王珉 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 1999年第1期102-106,共5页
Diamond like carbon thin film is successfully deposited on silicon, titanium and stainless steel substrate at low temperature in a filtered vacuum arc deposition system. Arc discharges are established on a graphite ... Diamond like carbon thin film is successfully deposited on silicon, titanium and stainless steel substrate at low temperature in a filtered vacuum arc deposition system. Arc discharges are established on a graphite cathode in the system with a toroidal macroparticle filter. A cathode activating magnetic field and a filtered magnetic field to collimate the plasma beam are applied. Ion current convected by the plasma beam is measured with a negatively biased probe. It is shown that the magnetic field of the coils located on the plasma duct has a strong influence on cathode spot behavior. Orthogonally the designed experiments are carried out to optimize the deposition parameters of arc stability. Finally, the diamond like carbon thin films are studied by scanning electron microscope (SEM) and Raman spectrum. 展开更多
关键词 diamond like carbon thin film filtered vacuum arc deposition
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OptoGPT: A foundation model for inverse design in optical multilayer thin film structures 被引量:2
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作者 Taigao Ma Haozhu Wang L.Jay Guo 《Opto-Electronic Advances》 SCIE EI CAS CSCD 2024年第7期4-16,共13页
Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design... Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design targets,or are difficult to suit for different types of structures,e.g.,designing for different materials at each layer.These methods also cannot accommodate versatile design situations under different angles and polarizations.In addition,how to benefit practical fabrications and manufacturing has not been extensively considered yet.In this work,we introduce OptoGPT(Opto Generative Pretrained Transformer),a decoder-only transformer,to solve all these drawbacks and issues simultaneously. 展开更多
关键词 multilayer thin film structure inverse design foundation models deep learning structural color
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Advancing Al-doped ZnO thin films structural,optical and electrical properties of low temperature PET substrates via flash lamp annealing
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作者 Juwon Lee Chang-Hyeon Jo +7 位作者 Gwangseop Lee Min-Sung Bae Slawomir Prucnal Shengqiang Zhou Muhammad Zubair Khan Osama Gohar Mohsin Saleem Jung-Hyuk Koh 《Journal of Semiconductors》 EI CAS CSCD 2024年第12期47-60,共14页
In this study,aluminum-doped zinc oxide(AZO)thin films were deposited onto a low-temperature polyethylene terephthalate(PET)substrate using DC magnetron sputtering.Deposition parameters included power range of 100-300... In this study,aluminum-doped zinc oxide(AZO)thin films were deposited onto a low-temperature polyethylene terephthalate(PET)substrate using DC magnetron sputtering.Deposition parameters included power range of 100-300 W,a working pressure of 15 mTorr,and a substrate temperature of 50°C.Post-deposition,flash lamp annealing(FLA)was employed as a rapid thermal processing method with a pulse duration of 1.7 ms and energy density of 7 J·cm-2,aimed at enhancing the film's quality while preserving the temperature-sensitive PET substrate.FLA offers advantages over conventional annealing,including shorter processing times and improved material properties.The structural,optical,and electrical characteristics of the AZO films were assessed using X-ray diffraction,field emission scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy,ultraviolet-visible spectroscopy,and Hall effect measurements.The results demonstrated that properties of AZO films varied with deposition and annealing conditions.Films deposited at 200 W and subjected to FLA exhibited superior crystallinity,with average visible light transmittance exceeding 80%and resistivity as low as 0.38Ω·cm representing 95%improvement in transmittance.Electrical analysis revealed that carrier concentration,mobility,and resistivity were influenced by both sputtering and annealing parameters.These findings underscore the effectiveness of FLA in optimizing AZO thin film properties,highlighting potential in optoelectronics applications. 展开更多
关键词 flash lamp annealing AZO thin film PET SPUTTERING
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Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition
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作者 Lu Wang Xulei Qin +8 位作者 Li Zhang Kun Xu Feng Yang Shaoqian Lu Yifei Li Bosen Liu Guohao Yu Zhongming Zeng Baoshun Zhang 《Journal of Semiconductors》 EI CAS CSCD 2024年第9期53-60,共8页
In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly impro... In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec. 展开更多
关键词 AlN thin film MPCVD gallium surfactant nucleation layer LASER
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Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering
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作者 Kerui Song Zhou Li +2 位作者 Mei Fang Zhu Xiao Qian Lei 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2024年第2期384-394,共11页
Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As... Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress. 展开更多
关键词 cobalt thin film magnetron sputtering microstructure electromagnetic properties
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Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy
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作者 黄盼盼 张有禄 +3 位作者 胡凯 齐静波 张岱南 程亮 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期164-169,共6页
We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn un... We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications. 展开更多
关键词 GeSn thin film time-resolved THz spectroscopy ultrafast dynamics carrier recombination
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Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO_(2):Y_(2)O_(3)/SrTiO_(3)thin films for non-volatile memory devices
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作者 YANG Ze-ou HUANG Xiao-zhong +3 位作者 HU Hai-long MA Bing-yang SHANG Hai-long YUE Jian-ling 《Journal of Central South University》 SCIE EI CAS CSCD 2024年第10期3674-3687,共14页
The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayer... The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism. 展开更多
关键词 YSZ/STO nano-multilayered thin film MEMRISTOR oxygen vacancy carrier mobility
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Liquid Metal Grid Patterned Thin Film Devices Toward Absorption‑Dominant and Strain‑Tunable Electromagnetic Interference Shielding
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作者 Yuwen Wei Priyanuj Bhuyan +9 位作者 Suk Jin Kwon Sihyun Kim Yejin Bae Mukesh Singh Duy Thanh Tran Minjeong Ha Kwang‑Un Jeong Xing Ma Byeongjin Park Sungjune Park 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第11期541-553,共13页
The demand of high-performance thin-film-shaped deformable electromagnetic interference(EMI)shielding devices is increasing for the next generation of wearable and miniaturized soft electronics.Although highly reflect... The demand of high-performance thin-film-shaped deformable electromagnetic interference(EMI)shielding devices is increasing for the next generation of wearable and miniaturized soft electronics.Although highly reflective conductive materials can effectively shield EMI,they prevent deformation of the devices owing to rigidity and generate secondary electromagnetic pollution simultaneously.Herein,soft and stretchable EMI shielding thin film devices with absorption-dominant EMI shielding behavior is presented.The devices consist of liquid metal(LM)layer and LM grid-patterned layer separated by a thin elastomeric film,fabricated by leveraging superior adhesion of aerosol-deposited LM on elastomer.The devices demonstrate high electromagnetic shielding effectiveness(SE)(SE_(T) of up to 75 dB)with low reflectance(SER of 1.5 dB at the resonant frequency)owing to EMI absorption induced by multiple internal reflection generated in the LM grid architectures.Remarkably,the excellent stretchability of the LM-based devices facilitates tunable EMI shielding abilities through grid space adjustment upon strain(resonant frequency shift from 81.3 to 71.3 GHz@33%strain)and is also capable of retaining shielding effectiveness even after multiple strain cycles.This newly explored device presents an advanced paradigm for powerful EMI shielding performance for next-generation smart electronics. 展开更多
关键词 Absorption-dominant electromagnetic interference shielding Liquid metals Soft and stretchable electronics thin film devices Tunable electromagnetic interference shielding
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Elastodynamic behaviors of steady moving straight dislocation within thin nano film
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作者 Ran Tao Yehui Hong +1 位作者 Zheyu Li Wenwang Wu 《Theoretical & Applied Mechanics Letters》 CAS CSCD 2024年第5期360-370,共11页
The elastodynamic dislocation behaviors are of great interest for understanding the performances of structural alloys under intense dynamic loading conditions.The formation,propagations,and interactions of dislocation... The elastodynamic dislocation behaviors are of great interest for understanding the performances of structural alloys under intense dynamic loading conditions.The formation,propagations,and interactions of dislocations(such as injected dislocation,accelerating dislocation,steady moving dislocation at high constant speed)are quite different from static dislocations.For steady-moving dislocation within the isotropic infinite medium,the effects of surface and interface on steady-moving dislocations within limited space are still known.In this paper,we investigate the elastodynamic image stress simulation of steady moving dislocation within film of limited thickness at constant speed using Eigenstrain theory,Lorentz transformation,and steady dynamic equilibrium equations.We propose an efficient solution method that involves complex Fourier series,transforming partial differential equations into ordinary differential equations,and ultimately into a set of algebraic equations in spectral space.The effects of dislocation speed and position near the free surface on the image stress of steady-moving climbing and gliding dislocations within the thin film are examined.The results show that relativistic effects are significant for certain dislocation configurations and stress components,whereas other stress components are less sensitive to relativistic effects near the transonic speed region. 展开更多
关键词 Elastodynamic Image stress DISLOCATION thin film
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Enhanced Electrical Properties of Bi_(2−x)Sb_(x)Te_(3) Nanoflake Thin Films Through Interface Engineering
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作者 Xudong Wu Junjie Ding +8 位作者 Wenjun Cui Weixiao Lin Zefan Xue Zhi Yang Jiahui Liu Xiaolei Nie Wanting Zhu Gustaaf Van Tendeloo Xiahan Sang 《Energy & Environmental Materials》 SCIE EI CAS CSCD 2024年第6期359-366,共8页
The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform int... The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film. 展开更多
关键词 Bi_(2)Te_(3) nanoflakes interface engineering scanning transmission electron microscopy thermoelectric thin film
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Effects of the ion-beam voltage on the properties of the diamond-like carbon thin film prepared by ion-beam sputtering deposition 被引量:1
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作者 孙鹏 胡明 +4 位作者 张锋 季一勤 刘华松 刘丹丹 冷健 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期581-585,共5页
Diamond-like carbon (DLC) thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prep... Diamond-like carbon (DLC) thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy (AFM), Raman spectroscopy, nanoindentation, and Fourier transform infrared (FTIR) spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases. 展开更多
关键词 DLC thin film ion-beam sputtering deposition chemical bondings infrared optical and mechani-cal properties
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Annealing Temperature-Dependent Luminescence Color Coordination in Eu-Doped AlN Thin Films
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作者 Yingda Qian Mariko Murayama +1 位作者 Sujun Guan Xinwei Zhao 《Journal of Materials Science and Chemical Engineering》 2024年第1期20-28,共9页
AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of... AlN was used as a host material and doped with Eu grown on Si substrate by pulsed laser deposition (PLD) with low substrate temperature. The X-ray diffraction (XRD) data revealed the orientation and the composition of the thin film. The surface morphology was studied by scanning electron microscope (SEM). While raising the annealing temperatures from 300˚C to 900˚C, the emission was observed from AlN: Eu under excitation of 260 nm excitation. The photoluminescence (PL) was integrated over the visible light wavelength shifted from the blue to the red zone in the CIE 1931 chromaticity coordinates. The luminescence color coordination of AlN: Eu depending on the annealing temperatures guides the further study of Eu-doped nitrides manufacturing on white light emitting diode (LED) and full color LED devices. 展开更多
关键词 Low-Temperature PLD Growth Eu-Doped AlN thin film White Light Emitting Diode
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A Study of Diamond-Like Carbon Thin Films Prepared by Microwave Plasma Chemical Vapour Deposition
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作者 赖秀琼 陈俊芳 +4 位作者 符斯列 李炜 张茂平 史磊 杨春林 《Plasma Science and Technology》 SCIE EI CAS CSCD 2007年第4期444-447,共4页
In order to deposit good films, we need to study the uniformity of plasma density and the plasma density under different gas pressures and powers. The plasma density was diagnosed by a Langmuir probe. The optical emis... In order to deposit good films, we need to study the uniformity of plasma density and the plasma density under different gas pressures and powers. The plasma density was diagnosed by a Langmuir probe. The optical emission spectroscopy (OES) of CH4 and H2 discharge was obtained with raster spectroscopy, with characteristic peaks of H and CH achieved. Diamond-like carbon films were achieved based on the study of plasma density and OES and characterized by atomic force microscope (AFM), X-ray diffraction instrument (XRD), Raman spectroscope and profiler. 展开更多
关键词 plasma density Langmuir probe OES diamond-like carbon thin films
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Structural and optoelectronic properties of AZO thin films prepared by RF magnetron sputtering at room temperature 被引量:3
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作者 孙宜华 王海林 +2 位作者 陈剑 方亮 王磊 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第6期1655-1662,共8页
Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of ... Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV. 展开更多
关键词 AZO thin film microstructure optoelectronic properties RF magnetron sputtering
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Fabrication of Bottom-Gate and Top-Gate Transparent ZnO Thin Film Transistors 被引量:1
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作者 张新安 张景文 +4 位作者 张伟风 王东 毕臻 边旭明 侯洵 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期859-862,共4页
Transparent zinc oxide thin film transistors (ZnO-TFTs) with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 fil... Transparent zinc oxide thin film transistors (ZnO-TFTs) with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/(V ·s), - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region. 展开更多
关键词 zinc oxide thin film transistor structure interface
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Influence of Substrate Temperature and Nitrogen Gas on Zinc Nitride Thin Films Prepared by RF Reactive Sputtering 被引量:1
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作者 张军 谢二庆 +2 位作者 付玉军 李晖 邵乐喜 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第8期1173-1178,共6页
Zinc nitride (Zn3N2) thin films were prepared by radio frequency (RF) magnetron sputtering on quartz glass at different substrate temperatures.The structure and composition were characterized by X-ray diffraction ... Zinc nitride (Zn3N2) thin films were prepared by radio frequency (RF) magnetron sputtering on quartz glass at different substrate temperatures.The structure and composition were characterized by X-ray diffraction and Raman-scattering measurements,respectively.The polycrystalline phase Zn3N2 films appeared when the ratio of the N2 partial pressure to the total pressure reached 1/2.The effects of the substrate temperature on the electrical and optical properties of the Zn3N2 films were investigated by Hall measurements and optical transmission spectra.The electrical and optical properties of the films were highly dependent on the substrate temperature.With the substrate temperature increasing from 100 to 300℃,the resistivity of the Zn3N2 films decreased from 0.49 to 0.023Ω·cm,the carrier concentration increased from 2.7×10^16 to 8.2×10^19cm^-3,and the electron mobility decreased from 115 to 32cm^2/(V·s).The deposited Zn3N2 films were considered to be n-type semiconductors with a direct optical band gap,which was around 1.23eV when the substrate temperature was 200℃. 展开更多
关键词 zinc nitride thin film magnetron sputtering electrical and optical properties
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Thickness Impacts of Vacancy Defects in Epitaxial La0.7Sr0.3MnO3 Thin Films Using Slow Positron Beam 被引量:1
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作者 刘建党 成斌 +1 位作者 杜淮江 叶邦角 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第6期685-688,746,共5页
Thickness effects of thin La0.7Sr0.3MnO3 (LSMO) films on (LaAlOa)0.3(Sr2AlTaO6)0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function... Thickness effects of thin La0.7Sr0.3MnO3 (LSMO) films on (LaAlOa)0.3(Sr2AlTaO6)0.7 substrates were examined by a slow positron beam technique. Doppler-broadening line shape parameter S was measured as a function of thickness and differnt annealing conditions. Results reveal there could be more than one mechanism to induce vacancy-like defects. It was found that strain-induced defects mainly influence the S value of the in situ oxygenambience annealing LSMO thin films and the strain could vanish still faster along with the increase of thickness, and the oxygen-deficient induced defects mainly affect the S value of post-annealing LSMO films. 展开更多
关键词 thin film Giant magnetoresistance Slow positron beam DEFECT
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Physical and Electrochemical Characterization of LiCo0.8M0.2O2 (M=Ni,Zr) Cathode Films for All-solid-state Rechargeable Thin-film Lithium Batteries 被引量:1
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作者 李驰麟 刘文元 傅正文 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2006年第6期493-498,共6页
LiCo0.8M0.2O2 (M=Ni,Zr) films were fabricated by radio frequency sputtering deposition combined with conventional annealing methods. The strtuctures of the films were characterized with X-ray diffraction (XRD), Ra... LiCo0.8M0.2O2 (M=Ni,Zr) films were fabricated by radio frequency sputtering deposition combined with conventional annealing methods. The strtuctures of the films were characterized with X-ray diffraction (XRD), Raman spectroscopy and scarming electron microscopy (SEM) techniques. It was shown that the 700 ℃- annealed LiCo0.8M0.2O2 has an α-NaFeO2 like layered structure. All-solid-state thin-film batteries (TFBs) were fabrieated with these films as the cathode and their eleetroctemical performances were evaluated. It was found that doping of electrochemically active Ni and inactive Zr has different effects on the structural and elcctrochemical properties of the LiCoO2 cathode films. Ni doping increases the discharge capacity of the film while Zr doping improves its cycling stability. 展开更多
关键词 Cathode materia ls All-solid-state thin film batteries Radio frequency sputtering
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Research on Raman-scattering and Fabrication of Multilayer Thin Film with Different Structures and Components Based on Pt/Ti/Si3N4/SiO2/Si Substrate
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作者 谭秋林 张文栋 +3 位作者 薛晨阳 刘俊 李都泓 熊继军 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2009年第3期333-338,340,共7页
Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate (PZT, Zr... Using the same conditions and various starting materials, such as lead acetate trihydrate, tetrabulyl titanate, zirconium n-butoxide, and acetylacetone, two kinds of solid precursors, lead zirconate titanate (PZT, Zr/Ti=15/85) and lead titanate (PT), were fabricated. With three different combinations, namely, PZT, PT/PZT-PZT/PT, and PT/PZT/-/PZT/PT, three multilayer thin films were deposited on three Pt-Ti-Si3N4-SiO2-Si substrates by a modified sol-gel process. The fabrication process of the thin films is discussed in detail. We found that there is a large built-in stress in the thin film, which can be diminished by annealing at 600 ℃, when the gel is turned into solid material through drying and sintering. The Raman scattering spectra of the films with different compositions and structures were investigated. With the help of X-ray diffraction (XRD) analyzer and Raman scattering spectra analyzer, it was found that the thin films with the PT/PZT-PZT/PT structure have reasonable crystallinity and less residual stress. XRD testing shows that the diffraction pattern of the multilayer film results from the superimposition of the PZT and PT patterns. This leads to the conclusion that the PT/PZT-PZT/PT multilayer thin film has a promising future in pyroelectric infrared detectors with high performance. 展开更多
关键词 Multilayer thin film PYROELECTRIC Sol-gel Raman XRD analysis
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Target effects on electrical properties and laser induced voltages of La_(0.72)Ca_(0.28)MnO_3 thin films prepared by pulsed laser deposition
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作者 张辉 王文章 +4 位作者 崔琦 业冬 马吉 陈清明 刘翔 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第2期465-470,共6页
La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 (100) single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synt... La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 (100) single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process. 展开更多
关键词 La0.72Ca0.28MnO3 TARGET thin film sol-gel method coprecipitation method
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