Amorphous Ti_(0.88)Ni_(1.00) and Ti_(1.69)Ni_(1.00) alloy films are prepared by means of ion beam sputtering using TiNi and Ti_2Ni alloy targets, respectively. Their hydrogen absorption properties are investigated by ...Amorphous Ti_(0.88)Ni_(1.00) and Ti_(1.69)Ni_(1.00) alloy films are prepared by means of ion beam sputtering using TiNi and Ti_2Ni alloy targets, respectively. Their hydrogen absorption properties are investigated by a galvanostatic method. The results show th the discharge capacity of the Ti_(1.69)Ni_(1.00) sample is higher than that of the Ti_(0.88)Ni_(1.00) sample. And the film electrodes have high durability and long cycle life.展开更多
Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for ...Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for the preparation of solar cells.However,the stable range of CuSbSe_(2)(CASe)phase is narrow,which is inevitable to form Sb_(2)Se_(3)and Cu_(3)SbSe_(4)second phase during the preparation process.In this work,selenization annealing of Sb/Cu metal layer to prepare CASe thin films with pulse electrodeposition process was studied,and the growth mechanism of CASe film was analyzed.Cu and Sb reacted with Se to form Cu_(2)Se and Sb_(2)Se_(3),respectively.Then Cu_(2)Se and Sb_(2)Se_(3)further reacted to generate CASe.Since the formation temperature of Cu_(3)SbSe_(4)was lower than that of CASe,the preferential formation of Cu_(3)SbSe_(4)led to layer separation.When the annealing temperature was too high,CASe decomposed to form Cu_(3)SbSe_(3)and Sb_(2)Se_(3).Additionally,by increasing the heating rate,the separation of CASe thin films was effectively improved,and the CASe thin films with relatively high crystallinity were obtained at 360℃with heating rate of 30℃/min and selenization time of 20 min.展开更多
文摘Amorphous Ti_(0.88)Ni_(1.00) and Ti_(1.69)Ni_(1.00) alloy films are prepared by means of ion beam sputtering using TiNi and Ti_2Ni alloy targets, respectively. Their hydrogen absorption properties are investigated by a galvanostatic method. The results show th the discharge capacity of the Ti_(1.69)Ni_(1.00) sample is higher than that of the Ti_(0.88)Ni_(1.00) sample. And the film electrodes have high durability and long cycle life.
基金the National Natural Science Foundation of China(Nos.61804108 and 62074084)。
文摘Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for the preparation of solar cells.However,the stable range of CuSbSe_(2)(CASe)phase is narrow,which is inevitable to form Sb_(2)Se_(3)and Cu_(3)SbSe_(4)second phase during the preparation process.In this work,selenization annealing of Sb/Cu metal layer to prepare CASe thin films with pulse electrodeposition process was studied,and the growth mechanism of CASe film was analyzed.Cu and Sb reacted with Se to form Cu_(2)Se and Sb_(2)Se_(3),respectively.Then Cu_(2)Se and Sb_(2)Se_(3)further reacted to generate CASe.Since the formation temperature of Cu_(3)SbSe_(4)was lower than that of CASe,the preferential formation of Cu_(3)SbSe_(4)led to layer separation.When the annealing temperature was too high,CASe decomposed to form Cu_(3)SbSe_(3)and Sb_(2)Se_(3).Additionally,by increasing the heating rate,the separation of CASe thin films was effectively improved,and the CASe thin films with relatively high crystallinity were obtained at 360℃with heating rate of 30℃/min and selenization time of 20 min.
