Superconducting thin films of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>（Y-Ba-Cu-O） with Tc more than 85K have been deposited in situ by metalorganic chemical vapor deposition ...Superconducting thin films of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>（Y-Ba-Cu-O） with Tc more than 85K have been deposited in situ by metalorganic chemical vapor deposition （MOCVD） on yttria stabilized zirconia（YSZ） substrates. The relationship of film orientation on substrate temperature and the lowest formation temperature region of superconducting phase have been obtained after changing the substrate temperature. The epitaxial relation between Y-Ba-Cu-O films and the YSZ su bstrates were discussed.展开更多
TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 ...TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 to 800 ℃ in a tube furnace under flowing oxygen gas for half an hour each. The effect of annealing temperatures on the structure, optical properties, and morphologies were presented and discussed by using X-ray diffraction, optical absorption spectrura, and atomic force microscope. The films show the presence of diffraction peaks from the （101）, （004）, （200） and （105） lattice planes of the anatase TiO2 lattice. The direct band gap of the annealed films decreases with the increase of annealing temperature. While, the roughness of the films increases with the increases of annealing temperature, and some significant roughness changes of the TiO2 film surfaces were observed after the annealing temperature reached 800 ℃. Moreover, the influences of annealing on the microstructures of the TiO2 film were investigated also by in situ observation in transmission electron microscope.展开更多
La0.7Sr0.3CoO3 (LSCO) thin films were epitaxially grown on (001)-single crystalline LaAlO3 substrates by metal organic deposition. The evolution of the crystallinity of the films having various thicknesses and obtaine...La0.7Sr0.3CoO3 (LSCO) thin films were epitaxially grown on (001)-single crystalline LaAlO3 substrates by metal organic deposition. The evolution of the crystallinity of the films having various thicknesses and obtained at various annealing temperatures is investigated using Raman spectroscopy. The Raman mode associated to the Jahn-Teller distortions in the LSCO films is found to be dependent on the annealing temperature and sensitive to the strain state evolution with film thickness. The microstructure and morphology of the obtained films were investigated using transmission electron microscopy observations on cross-sections and atomic force microscopy. The obtained films are characterized by nanocrystalline morphology, with an average roughness around 5 nm. By increasing the annealing temperature to 1000℃ and the film thickness to 100 nm, the electrical resistivity was decreased by several orders of magnitude. The film resistivity reaches approximately 2.7 × 10–4 Ω•cm in a wide interval of temperature of 77 - 320 K, making this material a promising candidate for a variety of applications.展开更多
对生长在Si和MgO单晶基片上的不同厚度的单层NbN薄膜、双层薄膜AlN/NbN以及三层薄膜NbN/AlN/NbN应用透射电子显微镜(Transmission Electron Microscope,TEM)技术进行了分析研究,对这几种薄膜样品的微观结构、薄膜厚度以及各个边界的一...对生长在Si和MgO单晶基片上的不同厚度的单层NbN薄膜、双层薄膜AlN/NbN以及三层薄膜NbN/AlN/NbN应用透射电子显微镜(Transmission Electron Microscope,TEM)技术进行了分析研究,对这几种薄膜样品的微观结构、薄膜厚度以及各个边界的一些直观细节给出了较为清晰的图像。由透射电子显微镜的电子衍射图案计算了薄膜和单晶衬底的晶格常数,并与我们以前采用X射线衍射技术分析的结果进行了比较,结果有很好的吻合。展开更多
Diamond like carbon films were synthesized by the pulsed laser deposition method under a magnetic filed. The magnetic field was used to enhance the hardness of the films. Analysis with transmission electron microscop...Diamond like carbon films were synthesized by the pulsed laser deposition method under a magnetic filed. The magnetic field was used to enhance the hardness of the films. Analysis with transmission electron microscopy and atomic force microscopy were carried out to characterize the films. As a protective coating, the film was deposited on porous silicon. The influence of the coating on the photoluminescence properties of porous silicon was studied.展开更多
Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy （TEM）....Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy （TEM）. It is found that the film is single-crystallized and epitaxially grown on the SrTiO3 substrate forming a flat and distinct interface. Anti-phase domains were identified, and the crystallographic features of mismatch dislocations at the interface between film and substrate were clarified. The high conductivity of the present film was discussed from the viewpoint of Nb dopant and the nitrogen atmosphere.展开更多
文摘Superconducting thin films of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>（Y-Ba-Cu-O） with Tc more than 85K have been deposited in situ by metalorganic chemical vapor deposition （MOCVD） on yttria stabilized zirconia（YSZ） substrates. The relationship of film orientation on substrate temperature and the lowest formation temperature region of superconducting phase have been obtained after changing the substrate temperature. The epitaxial relation between Y-Ba-Cu-O films and the YSZ su bstrates were discussed.
基金Funded by the National Basic Research Program of China (973 Program, 2009CB939704)the NSFC (No. 10905043, 11005082, 11004052)+4 种基金the Specialized Research Fund for the Doctoral Program of Higher Education (20100141120042, 20110141130004)the Foundations from Chinese Ministry of Education (311003)the Open Research Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices (UESTC) (KFJJ201004)Young Chenguang Project of Wuhan City (201050231055)the Fundamental Research Funds for the Central Universities, Hubei Provincial Natural Science Foundation(2011CDB270)
文摘TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 to 800 ℃ in a tube furnace under flowing oxygen gas for half an hour each. The effect of annealing temperatures on the structure, optical properties, and morphologies were presented and discussed by using X-ray diffraction, optical absorption spectrura, and atomic force microscope. The films show the presence of diffraction peaks from the （101）, （004）, （200） and （105） lattice planes of the anatase TiO2 lattice. The direct band gap of the annealed films decreases with the increase of annealing temperature. While, the roughness of the films increases with the increases of annealing temperature, and some significant roughness changes of the TiO2 film surfaces were observed after the annealing temperature reached 800 ℃. Moreover, the influences of annealing on the microstructures of the TiO2 film were investigated also by in situ observation in transmission electron microscope.
文摘La0.7Sr0.3CoO3 (LSCO) thin films were epitaxially grown on (001)-single crystalline LaAlO3 substrates by metal organic deposition. The evolution of the crystallinity of the films having various thicknesses and obtained at various annealing temperatures is investigated using Raman spectroscopy. The Raman mode associated to the Jahn-Teller distortions in the LSCO films is found to be dependent on the annealing temperature and sensitive to the strain state evolution with film thickness. The microstructure and morphology of the obtained films were investigated using transmission electron microscopy observations on cross-sections and atomic force microscopy. The obtained films are characterized by nanocrystalline morphology, with an average roughness around 5 nm. By increasing the annealing temperature to 1000℃ and the film thickness to 100 nm, the electrical resistivity was decreased by several orders of magnitude. The film resistivity reaches approximately 2.7 × 10–4 Ω•cm in a wide interval of temperature of 77 - 320 K, making this material a promising candidate for a variety of applications.
文摘对生长在Si和MgO单晶基片上的不同厚度的单层NbN薄膜、双层薄膜AlN/NbN以及三层薄膜NbN/AlN/NbN应用透射电子显微镜(Transmission Electron Microscope,TEM)技术进行了分析研究,对这几种薄膜样品的微观结构、薄膜厚度以及各个边界的一些直观细节给出了较为清晰的图像。由透射电子显微镜的电子衍射图案计算了薄膜和单晶衬底的晶格常数,并与我们以前采用X射线衍射技术分析的结果进行了比较,结果有很好的吻合。
文摘Diamond like carbon films were synthesized by the pulsed laser deposition method under a magnetic filed. The magnetic field was used to enhance the hardness of the films. Analysis with transmission electron microscopy and atomic force microscopy were carried out to characterize the films. As a protective coating, the film was deposited on porous silicon. The influence of the coating on the photoluminescence properties of porous silicon was studied.
基金supported by the National Natural Science Foundation of China under Grant No.50325101the Special Funds for the Major State Basic Research Projects of China(Grant No.2002CB613503).
文摘Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy （TEM）. It is found that the film is single-crystallized and epitaxially grown on the SrTiO3 substrate forming a flat and distinct interface. Anti-phase domains were identified, and the crystallographic features of mismatch dislocations at the interface between film and substrate were clarified. The high conductivity of the present film was discussed from the viewpoint of Nb dopant and the nitrogen atmosphere.
