This study is an extension of the previous work done with ARS-680 Environmental Chamber. Drying is a complex operation that demands much energy and time. Drying is essentially important for preservation of ginger rhiz...This study is an extension of the previous work done with ARS-680 Environmental Chamber. Drying is a complex operation that demands much energy and time. Drying is essentially important for preservation of ginger rhizome. Drying of ginger was modeled, and then the effective diffusion coefficient and activation energy were determined. For this purpose, the experiments were done at six levels of varied temperatures: 10°C, 20°C, 30°C, 40°C, 50°C and 60°C. The values of effective diffusion coefficients obtained in this work for the variously treated ginger rhizomes closely agreed with the average effective diffusion coefficients of other notable authors who determined the drying kinetics and convective heat transfer coefficients of ginger slices.展开更多
In this work, a model of convective drying of mango slices was developed and validated by experiments. This model was established by considering slices shrinkage in the energy and the mass balances during the thin lay...In this work, a model of convective drying of mango slices was developed and validated by experiments. This model was established by considering slices shrinkage in the energy and the mass balances during the thin layer drying. The drying kinetics and the temperature curves of the product were simulated using the model at various drying temperatures. The simulated curves were then compared to the experimental curves obtained using a convective dryer controlled in temperature and moisture. The results showed that the drying curves were suitably fitted by the thin layer drying model with a correlation coefficient r<sup>2</sup> = 0.997. Thus, taking shrinkage into account, it is possible to predict more effectively the thin layer drying kinetics of mango slices. This study therefore contributed to the mango drying modelling and to the mango dryer setting.展开更多
Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltag...Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
Using Monte Carlo simulations, we have investigated the classical XY model on triangular lattices of ultra-thin film structures with middle ferromagnetic layers sandwiched between two antiferromagnetic layers. The int...Using Monte Carlo simulations, we have investigated the classical XY model on triangular lattices of ultra-thin film structures with middle ferromagnetic layers sandwiched between two antiferromagnetic layers. The internal energy, the specifc heat, the chirality and the chiral susceptibility are calculated in order to clarify phase transitions and critical phenomena. Prom the finite-size scaling analyses, the values of critical exponents are determined. In a range of interaction parameters, we find that the chirality steeply goes up as temperature increases in a temperature range; correspondingly the value of a critical exponent for this change is estimated.展开更多
针对背沟道刻蚀(Back Channel Etch,BCE)技术的非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(Thin Film Transistor,TFTs),建立了一种高浓度掺杂态密度模型(High Concentration Doping Density Of States model,HCD-DOS model),并通过数值模拟...针对背沟道刻蚀(Back Channel Etch,BCE)技术的非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(Thin Film Transistor,TFTs),建立了一种高浓度掺杂态密度模型(High Concentration Doping Density Of States model,HCD-DOS model),并通过数值模拟研究态密度关键参数对器件性能的影响,以此揭示a-IGZO TFTs中制备工艺对导电沟道修复的物理机理.首先,采用结合强度较高的钼/铜双层结构作为栅/源/漏电极,引入BCE方法制备了底栅顶接触(BottomGate Top-Contact,BG-TC)TFTs.其次,建立了适用于BCE技术的a-IGZO TFTs的HCD-DOS模型.随后,基于TCAD(Technology Computer Aided Design)仿真器对态密度关键参数进行数值研究,结果表明,不同态密度参数对a-IGZO TFTs器件转移特性曲线、电学特性以及沟道内部电子浓度分布的影响有所差异.最后,基于HCD-DOS模型探索SiO_(x)钝化层沉积和N_(2)O等离子体处理对器件内部机理的影响.研究发现,N2O等离子体处理对态密度分布和沟道载流子浓度有显著影响,进而导致阈值电压正向漂移.展开更多
Drying operations can help in reducing the moisture content of food materials for avoidance of microbial growth and deterioration, for shelf life elongation, to minimize packaging and improving storage for easy transp...Drying operations can help in reducing the moisture content of food materials for avoidance of microbial growth and deterioration, for shelf life elongation, to minimize packaging and improving storage for easy transportation. Thin-layer drying of materials is necessary to understand the fundamental transport mechanism and a prerequisite to successfully simulate or scale up the whole process for optimization or control of the operating conditions. Researchers have shown that to rely solely on experimental drying practices without mathematical considerations for the drying kinetics, can significantly affect the efficiency of dryers, increase the cost of production, and reduce the quality of the dried product. An effective model is necessary for the process design, optimization, energy integration and control;hence, the use of mathematical models in finding the drying kinetics of agricultural products is very important. The statistical criteria in use for the evaluation of the best model(s) has it that coefficient of determination (R2) has to be close to unity while the rest statistical measures will have values tending to zero. In this work, the essence of drying using thin-layer, general approaches to modeling for food drying mechanisms thin layer drying models and optimization of the drying processes have been discussed.展开更多
文摘This study is an extension of the previous work done with ARS-680 Environmental Chamber. Drying is a complex operation that demands much energy and time. Drying is essentially important for preservation of ginger rhizome. Drying of ginger was modeled, and then the effective diffusion coefficient and activation energy were determined. For this purpose, the experiments were done at six levels of varied temperatures: 10°C, 20°C, 30°C, 40°C, 50°C and 60°C. The values of effective diffusion coefficients obtained in this work for the variously treated ginger rhizomes closely agreed with the average effective diffusion coefficients of other notable authors who determined the drying kinetics and convective heat transfer coefficients of ginger slices.
文摘In this work, a model of convective drying of mango slices was developed and validated by experiments. This model was established by considering slices shrinkage in the energy and the mass balances during the thin layer drying. The drying kinetics and the temperature curves of the product were simulated using the model at various drying temperatures. The simulated curves were then compared to the experimental curves obtained using a convective dryer controlled in temperature and moisture. The results showed that the drying curves were suitably fitted by the thin layer drying model with a correlation coefficient r<sup>2</sup> = 0.997. Thus, taking shrinkage into account, it is possible to predict more effectively the thin layer drying kinetics of mango slices. This study therefore contributed to the mango drying modelling and to the mango dryer setting.
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金Project supported by the National Natural Science Foundation of China （Grant No 10234010）, Acknowledgements The authors would like to thank Professor T. Horiguch for his useful discussion. 0ur simulations were carried out on IBM RS/6000 SP3 at the Centre for Computational Science and Engineering of Peking University.
文摘Using Monte Carlo simulations, we have investigated the classical XY model on triangular lattices of ultra-thin film structures with middle ferromagnetic layers sandwiched between two antiferromagnetic layers. The internal energy, the specifc heat, the chirality and the chiral susceptibility are calculated in order to clarify phase transitions and critical phenomena. Prom the finite-size scaling analyses, the values of critical exponents are determined. In a range of interaction parameters, we find that the chirality steeply goes up as temperature increases in a temperature range; correspondingly the value of a critical exponent for this change is estimated.
文摘针对背沟道刻蚀(Back Channel Etch,BCE)技术的非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(Thin Film Transistor,TFTs),建立了一种高浓度掺杂态密度模型(High Concentration Doping Density Of States model,HCD-DOS model),并通过数值模拟研究态密度关键参数对器件性能的影响,以此揭示a-IGZO TFTs中制备工艺对导电沟道修复的物理机理.首先,采用结合强度较高的钼/铜双层结构作为栅/源/漏电极,引入BCE方法制备了底栅顶接触(BottomGate Top-Contact,BG-TC)TFTs.其次,建立了适用于BCE技术的a-IGZO TFTs的HCD-DOS模型.随后,基于TCAD(Technology Computer Aided Design)仿真器对态密度关键参数进行数值研究,结果表明,不同态密度参数对a-IGZO TFTs器件转移特性曲线、电学特性以及沟道内部电子浓度分布的影响有所差异.最后,基于HCD-DOS模型探索SiO_(x)钝化层沉积和N_(2)O等离子体处理对器件内部机理的影响.研究发现,N2O等离子体处理对态密度分布和沟道载流子浓度有显著影响,进而导致阈值电压正向漂移.
文摘Drying operations can help in reducing the moisture content of food materials for avoidance of microbial growth and deterioration, for shelf life elongation, to minimize packaging and improving storage for easy transportation. Thin-layer drying of materials is necessary to understand the fundamental transport mechanism and a prerequisite to successfully simulate or scale up the whole process for optimization or control of the operating conditions. Researchers have shown that to rely solely on experimental drying practices without mathematical considerations for the drying kinetics, can significantly affect the efficiency of dryers, increase the cost of production, and reduce the quality of the dried product. An effective model is necessary for the process design, optimization, energy integration and control;hence, the use of mathematical models in finding the drying kinetics of agricultural products is very important. The statistical criteria in use for the evaluation of the best model(s) has it that coefficient of determination (R2) has to be close to unity while the rest statistical measures will have values tending to zero. In this work, the essence of drying using thin-layer, general approaches to modeling for food drying mechanisms thin layer drying models and optimization of the drying processes have been discussed.
