MET receptor tyrosine kinase promotes the generation of functional synapses in adult cortical circuits

Loss of synapse and functional connectivity in brain circuits is associated with aging and neurodegeneration,however,few molecular mechanisms are known to intrinsically promote synaptogenesis or enhance synapse function.We have previously shown that MET receptor tyrosine kinase in the developing cortical circuits promotes dendritic growth and dendritic spine morphogenesis.To investigate whether enhancing MET in adult cortex has synapse regenerating potential,we created a knockin mouse line,in which the human MET gene expression and signaling can be turned on in adult(10–12 months)cortical neurons through doxycycline-containing chow.We found that similar to the developing brain,turning on MET signaling in the adult cortex activates small GTPases and increases spine density in prefrontal projection neurons.These findings are further corroborated by increased synaptic activity and transient generation of immature silent synapses.Prolonged MET signaling resulted in an increasedα-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid/N-methyl-Daspartate(AMPA/NMDA)receptor current ratio,indicative of enhanced synaptic function and connectivity.Our data reveal that enhancing MET signaling could be an interventional approach to promote synaptogenesis and preserve functional connectivity in the adult brain.These findings may have implications for regenerative therapy in aging and neurodegeneration conditions.

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.

Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs

An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

Indispensable gutter layers in thin-film composite membranes for carbon capture

Industrial thin-film composite(TFC)membranes achieve superior gas separation properties from high-performance selective layer materials,while the success of membrane technology relies on high-performance gutter layers to achieve production scalability and low-cost manufacturing.However,the current literature predominantly focuses on the design of polymer architectures to obtain high permeability and selectivity,while the art of fabricating gutter layers is usually safeguarded by industrial manufacturers and appears lackluster to academic researchers.This is the first report aiming to provide a comprehensive and critical review of state-of-the-art gutter layer materials and their design and modification to enable TFC membranes with superior separation performance.We first elucidate the importance of the gutter layer on membrane performance through modeling and experimental results.Then various gutter layer materials used to obtain high-performance composite membranes are critically reviewed,and the strategies to improve their compatibility with the selective layer are highlighted,such as oxygen plasma treatment,polydopamine deposition,and surface grafting.Finally,we present the opportunities of the gutter layer design for practical applications.

Carbon nanotube integrated circuit technology:purification,assembly and integration

As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.

Neuromorphic circuits based on memristors: endowing robots with a human-like brain

Robots are widely used,providing significant convenience in daily life and production.With the rapid development of artificial intelligence and neuromorphic computing in recent years,the realization of more intelligent robots through a pro-found intersection of neuroscience and robotics has received much attention.Neuromorphic circuits based on memristors used to construct hardware neural networks have proved to be a promising solution of shattering traditional control limita-tions in the field of robot control,showcasing characteristics that enhance robot intelligence,speed,and energy efficiency.Start-ing with introducing the working mechanism of memristors and peripheral circuit design,this review gives a comprehensive analysis on the biomimetic information processing and biomimetic driving operations achieved through the utilization of neuro-morphic circuits in brain-like control.Four hardware neural network approaches,including digital-analog hybrid circuit design,novel device structure design,multi-regulation mechanism,and crossbar array,are summarized,which can well simulate the motor decision-making mechanism,multi-information integration and parallel control of brain at the hardware level.It will be definitely conductive to promote the application of memristor-based neuromorphic circuits in areas such as intelligent robotics,artificial intelligence,and neural computing.Finally,a conclusion and future prospects are discussed.

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems

Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states

Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.

A Novel Framework to Construct S-Box Quantum Circuits Using System Modeling: Application to 4-Bit S-Boxes

Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the performance of attacks using quantum computers depends on the efficiency of the quantum circuit of the encryption algorithms,research research on the implementation of quantum circuits is essential.This paper presents a new framework to construct quantum circuits of substitution boxes(S-boxes)using system modeling.We model the quantum circuits of S-boxes using two layers:Toffoli and linear layers.We generate vector spaces based on the values of qubits used in the linear layers and apply them to find quantum circuits.The framework finds the circuit bymatching elements of vector spaces generated fromthe input and output of a given S-box,using the forward search or themeet-in-the-middle strategy.We developed a tool to apply this framework to 4-bit S-boxes.While the 4-bit S-box quantum circuit construction tool LIGHTER-R only finds circuits that can be implemented with four qubits,the proposed tool achieves the circuits with five qubits.The proposed tool can find quantum circuits of 4-bit odd permutations based on the controlled NOT,NOT,and Toffoli gates,whereas LIGHTER-R is unable to perform this task in the same environment.We expect this technique to become a critical step toward optimizing S-box quantum circuits.

Nullors, and Nullor Circuits;There Applications in Symbolic Circuit Analysis and Design

The objective in this presentation is to introduce some of the unique properties and applications of nullors in active circuit analysis and designs. The emphasis is to discuss the role nullors can play in symbolic representation of transfer functions. To show this we adopt the topological platform for the circuit analysis and use a recently developed Admittance Method (AM) to achieve the Sum of Tree Products (STP), replacing the determinant and cofactors of the Nodal Admittance Matrix (NAM) of the circuit. To construct a transfer function, we start with a given active circuit and convert all its controlled sources and I/O-ports to nullors. Now, with a solid nullor circuit (passive elements and nullors) we first eliminate the passive elements through AM operations. This produces the STPs. Second, the all-nullor circuit is then used to find the signs or the STPs. Finally, the transfer function (in symbolic, if chosen) is obtained from the ratio between the STPs.

基于MSPA-MCR-CIRCUIT的山西省运城市景观生态网络构建

山西省运城市位于黄河中下游三省交界处,其景观要素成分复杂,对运城景观生态网络斑块与廊道的研究有利于黄河生态系统稳定性的保护。基于形态空间格局理论(MSPA)确定连通性强的核心斑块,识别核心生态源地,以最小累计阻力模型(MCR)为基础,叠加7种阻力因子构建综合阻力面,根据重力模型划分生态廊道等级。以基于电路理论(CIRCUIT)的Linkage Mapper工具识别生态夹点和障碍点作为生态节点,综合构建源地(面)-廊道(线)-节点(点)的运城市景观生态网络。结果表明:1)运城市核心生态源地有9处,综合重力模型和实际建设需求划分13条重要生态廊道和10条一般生态廊道,识别出关键生态节点17个,一般生态节点34个;2)现有重要生态廊道集中于运城南部,南北方向生态联系较弱,可优先加强贯穿稷山县、新绛县、闻喜县的重要生态廊道建设;3)MSPA模型与电路理论的综合运用可提升景观生态网络构建的科学性和准确性,有利于确定生态修复关键区域,为生态修复项目的布局提供有力支撑。

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Low-Volatile Binder Enables Thermal Shock-Resistant Thin-Film Cathodes for Thermal Batteries

Manufacturing thin-film components is crucial for achieving high-efficiency and high-power thermal batteries(TBs).However,developing binders with low-gas production at the operating temperature range of TBs(400-550°C)has proven to be a significant challenge.Here,we report the use of acrylic acid derivative terpolymer(LA136D)as a low-volatile binder for thin-film cathode fabrication and studied the chain scission and chemical bondbreaking mechanisms in pyrolysis.It is shown LA136D defers to randomchain scission and cross-linking chain scission mechanisms,which gifts it with a low proportion of volatile products(ψ,ψ=39.2 wt%)at even up to 550°C,well below those of the conventional PVDF(77.6 wt%)and SBR(99.2 wt%)binders.Surprisingly,LA136D contributes to constructing a thermal shock-resistant cathode due to the step-by-step bond-breaking process.This is beneficial for the overall performance of TBs.In discharging test,the thin-film cathodes exhibited a remarkable 440%reduction in polarization and 300%enhancement in the utilization efficiency of cathode materials,while with just a slight increase of 0.05 MPa in gas pressure compared with traditional“thick-film”cathode.Our work highlights the potential of LA136D as a low-volatile binder for thin-film cathodes and shows the feasibility of manufacturing high-efficiency and high-power TBs through polymer molecule engineering.

Interplay between topology and localization on superconducting circuits

Topological insulators occupy a prominent position in the realm of condensed matter physics. Nevertheless, the presence of strong disorder has the potential to disrupt the integrity of topological states, leading to the localization of all states.This study delves into the intricate interplay between topology and localization within the one-dimensional Su–Schrieffer–Heeger(SSH) model, which incorporates controllable off-diagonal quasi-periodic modulations on superconducting circuits.Through the application of external alternating current(ac) magnetic fluxes, each transmon undergoes controlled driving,enabling independent tuning of all coupling strengths. Within a framework of this model, we construct comprehensive phase diagrams delineating regions characterized by extended topologically nontrivial states, critical localization, and coexisting topological and critical localization phases. The paper also addresses the dynamics of qubit excitations, elucidating distinct quantum state transfers resulting from the intricate interplay between topology and localization. Additionally, we propose a method for detecting diverse quantum phases utilizing existing experimental setups.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Numerical Simulation of Flow Field and Flow State Division in Thin-Film Evaporators

The flow field and flow state of thin-film evaporators are complex,and it is significant to effectively divide and quantify the flow field and flow state,as well as to study the internal flow field distribution and material mixing characteristics to improve the efficiency of thin-film evaporators.By using computational fluid dynamics(CFD)numerical simulation,the distribution pattern of the high-viscosity fluid flow field in the thin-film evaporators was obtained.It was found that the staggered interrupted blades could greatly promote material mixing and transportation,and impact the film formation of high-viscosity materials on the evaporator wall.Furthermore,a flow field state recognition method based on radial volume fraction statistics was proposed,and could quantitatively describe the internal flow field of thin-film evaporators.The method divides the high-viscosity materials in the thin-film evaporators into three flow states,the liquid film state,the exchange state and the liquid mass state.The three states of materials could be quantitatively described.The results show that the materials in the exchange state can connect the liquid film and the liquid mass,complete the material mixing and exchange,renew the liquid film,and maintain continuous and efficient liquid film evaporation.

In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits

The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface,where Nb2O5 is considered the main loss source.Here,we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film.With TiN capping layers,no Nb2O5 forms on the surface of the Nb film.The quality factor Qi of the Nb resonator increases from 5.6×10^(5) to 7.9×10^(5) at low input power and from 6.8×10^(6) to 1.1×10^(7)at high input power.Furthermore,the TiN capping layer also shows good aging resistance in Nb resonator devices,with no significant performance fluctuations after one month of aging.These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.

The circuitry landscape of perovskite solar cells:An in-depth analysis

The extensive research and development in perovskite solar cells (PSCs) have rekindled the hopes of converting solar energy into electricity.An elusive understanding of underlying mechanisms is required for the development of efficient PSCs.Over the years,Impedance Spectroscopy (IS) characterization,along with complementary techniques,has proven to be an effective way to understand and analyze the charge transport and recombination at interface and bulk of PSCs.The IS of PSCs have been analyzed,interpreted,and improvised continuously,revealing intricate details about the work.However,there is a lack of centralized source of these details,which make it tougher to account for the generalized approach to understand the device properties.The present work is focused on compiling the research done on various PSC device architectures via IS to construct a comprehensive foundation of information on impedance plots,equivalent circuits,and associated processes.

Correction of microwave pulse reflection by digital filters in superconducting quantum circuits

Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch in the control chain.Here,we demonstrate a reflection cancelation method when considering that there are two reflection nodes on the control line.We propose to generate the pre-distortion pulse by passing the envelopes of the microwave signal through digital filters,which enables real-time reflection correction when integrated into the field-programmable gate array(FPGA).We achieve a reduction of single-qubit gate infidelity from 0.67%to 0.11%after eliminating microwave reflection.Real-time correction of microwave reflection paves the way for precise control and manipulation of the qubit state and would ultimately enhance the performance of algorithms and simulations executed on quantum processors.