Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Indispensable gutter layers in thin-film composite membranes for carbon capture

Industrial thin-film composite(TFC)membranes achieve superior gas separation properties from high-performance selective layer materials,while the success of membrane technology relies on high-performance gutter layers to achieve production scalability and low-cost manufacturing.However,the current literature predominantly focuses on the design of polymer architectures to obtain high permeability and selectivity,while the art of fabricating gutter layers is usually safeguarded by industrial manufacturers and appears lackluster to academic researchers.This is the first report aiming to provide a comprehensive and critical review of state-of-the-art gutter layer materials and their design and modification to enable TFC membranes with superior separation performance.We first elucidate the importance of the gutter layer on membrane performance through modeling and experimental results.Then various gutter layer materials used to obtain high-performance composite membranes are critically reviewed,and the strategies to improve their compatibility with the selective layer are highlighted,such as oxygen plasma treatment,polydopamine deposition,and surface grafting.Finally,we present the opportunities of the gutter layer design for practical applications.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Numerical Study and Optimization of CZTS-Based Thin-Film Solar Cell Structure with Different Novel Buffer-Layer Materials Using SCAPS-1D Software

This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd0.4Zn0.6S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd0.4Zn0.6S, ZnS and CdS are comparable, Cd0.4Zn0.6S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd0.4Zn0.6S, ZnS and CdS showed that optimum buffer-layer thickness for Cd0.4Zn0.6S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

All-Solid-State Thin-Film Lithium-Sulfur Batteries

Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Things microdevice.However,the volatility in high vacuum and intrinsic sluggish kinetics of S hinder researchers from empirically integrating it into allsolid-state thin-film batteries,leading to inexperience in fabricating all-solid-state thin-film Li-S batteries(TFLSBs).Herein,for the first time,TFLSBs have been successfully constructed by stacking vertical graphene nanosheets-Li2S(VGsLi2S)composite thin-film cathode,lithium-phosphorous-oxynitride(LiPON)thin-film solid electrolyte,and Li metal anode.Fundamentally eliminating Lipolysulfide shuttle effect and maintaining a stable VGs-Li2S/LiPON interface upon prolonged cycles have been well identified by employing the solid-state Li-S system with an“unlimited Li”reservoir,which exhibits excellent longterm cycling stability with a capacity retention of 81%for 3,000 cycles,and an exceptional high temperature tolerance up to 60℃.More impressively,VGs-Li2S-based TFLSBs with evaporated-Li thin-film anode also demonstrate outstanding cycling performance over 500 cycles with a high Coulombic efficiency of 99.71%.Collectively,this study presents a new development strategy for secure and high-performance rechargeable all-solid-state thin-film batteries.

Stability of high-salinity-enhanced foam:Surface behavior and thin-film drainage

Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg/L.However,the synergistic effects between CHSB and salt have not been fully understood.This study utilized bulk foam tests and thin-film interferometry to comprehensively investigate the macroscopic and microscopic decay processes of CHSB foams with NaCl concentrations ranging from 2.3×10^(4)to 2.1×10^(5)mg/L.We focused on the dilatational viscoelasticity and dynamic thin-film thickness to elucidate the high-salinity-enhanced foam stability.The increase in dilatational viscoelasticity and supramolecular oscillating structural force(Π_(OS))with salinity dominated the superior stability of CHSB foam.With increasing salinity,more CHSB molecules accumulated on the surface with a lower diffusion rate,leading to high dilatational moduli and surface elasticity,thus decelerating coarsening and coalescence.Meanwhile,the number density of micelles in the thin film increased with salinity,resulting in increasedΠOS.Consequently,the energy barrier for stepwise thinning intensified,and the thin-film drainage slowed.This work conduces to understand the mechanisms behind the pronounced stability of betaine foam and can promote the widespread application of foam in harsh reservoirs.

Revisiting “Non-Thermal” Batch Microwave Oven Inactivation of Microorganisms

Over the last few decades there has been active discussion concerning the mechanisms involved in “non-thermal” microwave-assisted inactivation of microorganisms. This work presents a novel non-invasive acoustic measurement of a domestic microwave oven cavity-magnetron operating at fo = 2.45 ± 0.05 GHz (λo ~ 12.2 cm) that is modulated in the time-domain (0 to 2 minutes). The measurements reveal the cavity-magnetron cathode filament cold-start warm-up period and the pulse width modulation periods (time-on time-off and base-time period, where time-on minus base-time = duty cycle). The waveform information is used to reconstruct historical microwave “non-thermal” homogeneous microorganism inactivation experiments: where tap-water is used to mimic the microorganism suspension;and ice, crushed ice, and ice slurry mixture are used as the cooling media. The experiments are described using text, diagrams, and photographs. Four key experimental parameters are indentified that influence the suspension time-dependent temperature profile. First, where the selected process time > the time-base, the cavity-magnetron continuous wave rated power should be used for each second of microwave illumination. Second, external crushed ice and ice slurry baths induce different cooling profiles due to difference in their heat absorption rates. In addition external baths may shield the suspension resulting in a retarding of the time-dependent heating profile. Third, internal cooling systems dictate that the suspension is directly exposed to microwave illumination due to the absence of surrounding ice volume. Fourth, four separated water dummy-loads isolate and control thermal heat transfer (conduction) to and from the suspension, thereby diverting a portion of the microwave power away from the suspension. Energy phase-space projections were used to compare the “non-thermal” energy densities of 0.03 to 0.1 kJ·m-1 at 800 W with reported thermal microwave-assisted microorganism inactivation energy densities of 0.5 to 5 kJ·m-1 at 1050 ± 50 W. Estimations of the “non-thermal” microwave-assisted root mean square of the electric field strength are found to be in the range of 22 to 41.2 V·m-1 for 800 W.

Benchmark Dose Assessment for Coke Oven Emissions-Induced Mitochondrial DNA Copy Number Damage Effects

Objective The study aimed to estimate the benchmark dose(BMD)of coke oven emissions(COEs)exposure based on mitochondrial damage with the mitochondrial DNA copy number(mtDNAcn)as a biomarker.Methods A total of 782 subjects were recruited,including 238 controls and 544 exposed workers.The mtDNAcn of peripheral leukocytes was detected through the real-time fluorescence-based quantitative polymerase chain reaction.Three BMD approaches were used to calculate the BMD of COEs exposure based on the mitochondrial damage and its 95%confidence lower limit(BMDL).Results The mtDNAcn of the exposure group was lower than that of the control group(0.60±0.29 vs.1.03±0.31;P<0.001).A dose-response relationship was shown between the mtDNAcn damage and COEs.Using the Benchmark Dose Software,the occupational exposure limits(OELs)for COEs exposure in males was 0.00190 mg/m^(3).The OELs for COEs exposure using the BBMD were 0.00170 mg/m^(3)for the total population,0.00158 mg/m^(3)for males,and 0.00174 mg/m^(3)for females.In possible risk obtained from animal studies(PROAST),the OELs of the total population,males,and females were 0.00184,0.00178,and 0.00192 mg/m^(3),respectively.Conclusion Based on our conservative estimate,the BMDL of mitochondrial damage caused by COEs is0.002 mg/m^(3).This value will provide a benchmark for determining possible OELs.

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems

Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

Enhanced efficiency of the Sb_(2)Se_(3)thin-film solar cell by the anode passivation using an organic small molecular of TCTA

Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.

High-performance amorphous In–Ga–Zn–O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO_(2) heterojunction charge trapping stack

Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.

Advances in mobility enhancement of ITZO thin-film transistors:a review

Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.

7.63 m焦炉PROven系统固定杯更换的改进

对PROven系统固定杯的更换方案进行了分析,通过优化作业步骤,克服了危险性大、吊装难度高等难题,为焦炉单炭化室压力调节系统的维护作业提供了参考和借鉴。

焦炉煤气脱碳法及甲烷化法制液化天然气的生命周期环境影响分析

作为焦化副产品,焦炉煤气富含氢气和甲烷,采用焦炉煤气制液化天然气(LNG)已成为当前焦炉煤气利用的主要途径之一。为系统评估焦炉煤气制LNG工艺的能源消耗和环境影响,尤其是碳排放,本文采用生命周期评价方法对脱碳法和甲烷化法两种焦炉煤气制LNG工艺进行系统评价。结果表明,无论采用哪种方法,LNG生产阶段均为焦炉煤气制LNG工艺生命周期环境负荷的控制阶段;在脱碳法工艺中,中压蒸汽是环境影响贡献的关键物质,可通过干熄焦回收红焦余热副产蒸汽补充LNG生产消耗来降低环境负荷;在甲烷化工艺中,电力为主要贡献物质,在碳排放中占比41.09%,若采用可再生能源电力(太阳能发电、风电、水电)替代后环境影响显著降低;相比于脱碳法,采用甲烷化工艺环境性能更优,主要源于甲烷增产优势。本文研究结果可从生命周期角度为焦化行业焦炉煤气的综合利用提供理论支持。

关于7.63m焦炉上升管结石墨原因分析及治理对策的研究

德国伍德公司开发的7.63 m特大型复热式焦炉在生产过程中上升管根部结石墨严重,成为制约焦炉正常生产的突出矛盾。从焦炉加热水平、焦炉加热制度、装煤量等因素综合分析影响上升管根部结石墨的成因,研究制定降低上升管根部结石墨速率的方法及自动清除上升管根部石墨的装置,达到避免因上升管根部结石墨影响焦炉生产的目的。

提高马钢焦炉K_(3)系数的生产实践

通过分析影响马钢焦炉K_(3)系数的因素,采取优化焦炉生产组织、提高设备保产能力、加强炼焦过程监控、全面对标找差、强化炉体维护等具体措施,使得焦炉K_(3)系数得到了稳定提升。

枸杞烘干箱温度场优化及仿真

目的:提高枸杞干制品品质。方法:采用标准Realizable k-ε湍流模型进行理论分析,利用Fluent软件仿真运算并结合实验验证,探究烘干室换热温度场分布规律,并对换热参数进行优化。以温度均匀性系数以及温度分布云图为评价标准,分析换热板入口流速、换热板流道宽度、换热板流道高度、换热板间距对烘干箱温度场均匀性的影响。结果:对烘干室结构参数进行优化后,温度云图显示出的高温区面积大且比较集中,两端和中间的温度梯度小。优化后的温度标准偏差比优化前降低了0.64%,模拟值与试验值的整体趋势大体相同,其误差值为2.56%。结论:枸杞烘干温度分布均匀性最佳的工艺条件为热水入口流速0.18 m/s,流道高度22 mm,流道宽度35 mm,换热板间距85 mm。

干熄焦放散气代替部分焦炉加热燃气的燃烧过程模拟研究

以JN-70型焦炉混合煤气加热为研究对象,利用Ansys Fluent软件对干熄焦放散气代替部分燃气的燃烧过程进行稳态模拟研究,分析了干熄焦放散气的配入对立火道内压力场、温度场、浓度场的影响。结果表明,在空气中配入5%干熄焦放散气时,立火道的最高温度不变,高向加热的均匀性有所提高,且烟气中的NO_(x)浓度变化不大。因此,焦炉燃烧室配入干熄焦放散气替代部分燃气具有一定的可行性。