Interface optimization and defects suppression via Na F introduction enable efficient flexible Sb_(2)Se_(3) thin-film solar cells

Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.

Back contact interfacial modification mechanism in highly-efficient antimony selenide thin-film solar cells

Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar cells.Hence,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar cells.In this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were conducted.The growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable thickness.The MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in devices.Subsequently,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.

Design of periodic metal-insulator-metal waveguide back structures for the enhancement of light absorption in thin-film solar cells

To increase the absorption in a thin layer of absorbing material （amorphous silicon, a-Si）, a light trapping design is presented. The designed structure incorporates periodic metal-insulator-metal waveguides to enhance the optical path length of light within the solar cells. The new design can result in broadband optical absorption enhancement not only for transverse magnetic （TM）-polarized light, but also for transverse electric （TE）-polarized light. No plasmonic modes can be excited in TE-polarization, but because of the coupling into the a-Si planar waveguide guiding modes and the diffraction of light by the bottom periodic structures into higher diffraction orders, the total absorption in the active region is also increased. The results from rigorous coupled wave analysis show that the overall optical absorption in the active layer can be greatly enhanced by up to 40%. The designed structures presented in this paper can be integrated with back contact technology to potentially produce high-efficiency thin-film solar cell devices.

Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

β-FeSi_2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study

Using β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the β-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/μc-Si/β-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a- Si, μ-Si, and/3-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/μc-Si//3-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/μc-Si/β-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using β-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/μc-Si/β-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency.

Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In,Ga)Se_2 thin-film solar cells

The lowest energies which make Cu,In,Ga,and Se atoms composing Cu（In,Ga）Se_2（CIGS） material displaced from their lattice sites are evaluated,respectively.The non-ionizing energy loss（NIEL） for electron in CIGS material is calculated analytically using the Mott differential cross section.The relation of the introduction rate（k） of the recombination centers to NIEL is modified,then the values of k at different electron energies are calculated.Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers.The validity of the modeling approach is verified by comparison with the experimental data.

Numerical Study and Optimization of CZTS-Based Thin-Film Solar Cell Structure with Different Novel Buffer-Layer Materials Using SCAPS-1D Software

This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd0.4Zn0.6S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd0.4Zn0.6S, ZnS and CdS are comparable, Cd0.4Zn0.6S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd0.4Zn0.6S, ZnS and CdS showed that optimum buffer-layer thickness for Cd0.4Zn0.6S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.

Surface-functionalized hole-selective monolayer for high efficiency single-junction wide-bandgap and monolithic tandem perovskite solar cells

Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovskite solar cells(PSCs).Herein,we report a facile but powerful method to functionalize the surface of 2PACz-SAM,by which reproducible,highly stable,high-efficiency wide-bandgap PSCs can be obtained.The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM,which increases perovskite grain size,retards halide segregation,and accelerates hole extraction.The surface functionalization achieves a high power conversion efficiency(PCE)of 17.62%for a single-junction wide-bandgap(~1.77 e V)PSC.We also demonstrate a monolithic all-perovskite tandem solar cell using surfaceengineered HSC,showing high PCE of 24.66%with large open-circuit voltage of 2.008 V and high fillfactor of 81.45%.Our results suggest this simple approach can further improve the tandem device,when coupled with a high-performance narrow-bandgap sub-cell.

Modeling the performance of perovskite solar cells with inserting porous insulating alumina nanoplates

Peng et al.[Science 379683(2023)]reported an effective method to improve the performance of perovskite solar cells by using thicker porous insulator contact(PIC)-alumina nanoplates.This method overcomes the trade-off between the open-circuit voltage and the fill factor through two mechanisms:reduced surface recombination velocity and increased bulk recombination lifetime due to better perovskite crystallinity.From arguments of drift-diffusion simulations,we find that an increase in mobility and carrier recombination lifetime in bulk are the key factors for minimizing the resistance-effect from thicker PICs and achieving a maximum power conversion efficiency(PCE)at approximately 25%reduced contact area.Furthermore,the partially replacement of perovskite films with thicker PICs would result in a reduction in short-current density,but the relative low refractive index of the PICs imbedded into the high refractive index perovskite creates light trapping structures that compensate for this loss.

H-and J-aggregation of conjugated small molecules in organic solar cells

As H-and J-aggregation receive more and more attention in the research of organic solar cells(OSCs),especially in small molecular systems,deep understanding of aggregation behavior is needed to guide the design of conjugated small molecular structure and the fabrication process of OSC device.For this end,this review is written.Here,the review firstly introduced the basic information about H-and J-aggregation of conjugated small molecules in OSCs.Then,the characteristics of H-and J-aggregation and the methods to identify them were summarized.Next,it reviewed the research progress of H-and J-aggregation of conjugated small molecules in OSCs,including the factors influencing H-and J-aggregation in thin film and the effects of H-and J-aggregation on OPV performance.

A short overview of the lead iodide residue impact and regulation strategies in perovskite solar cells

Lead iodide(PbI2) is a vital raw material for preparing perovskite solar cells(PSCs),and it not only takes part in forming the light absorption layer but also remains in the grain boundary as a passivator.In other words,the PbI2 content in the precursor and as formed film will affect the efficiency and stability of the PSCs.With moderate residual PbI2,it passivates the bulk/surface defects of perovskite,reduces the interfacial recombination,promotes the perovskite stability,minimizes the device hysteresis,and so on.Deficient PbI2 residue will reduce the interfacial passivation effect and device performance.In addition to facilitating the non-radiative recombination,over PbI2 residue can also lead to electronic insulation in the grain boundary and deteriorate the device performance.However,the impact and regulation of PbI2 residue on the device performance and stability is still not fully understood.Herein,a comprehensive and detailed review is presented by discussing the PbI2 residue impact and its regulation strategies(i.e., elimination,facilitation and conversion of the residue PbI2) to manipulate the PbI2 content,distribution and forms.Finally,we also show future outlooks in this field,with an aim to help further the progression of high-efficiency and stable PSCs.

Dimethylamine oxalate manipulating CsPbI_(3) perovskite film crystallization process for high efficiency carbon electrode based perovskite solar cells

Crystallization process determines the quality of perovskite films and the performances of resultant perovskite solar cells(PSCs).Dimethylamine oxalate has been proven as a multifunctional modulator,and is explored as an efficient additive in manipulating the crystallization process of CsPbI_(3) perovskite films.On one hand,oxalate serves as the precipitator that facilitates the nucleation process of intermediate.The larger size of intermediate is conductive to the larger size and smaller grain boundaries of resultant perovskite.On the other hand,in subsequent annealing process,the phase conversion and growth process of transient perovskite can be decelerated due to the strong interactions of oxalate with both dimethylamine cation(DMA^(+))and Pb^(2+).Due to the optimized crystallization kinetics,the morphology and quality of CsPbI_(3) perovskite films are comprehensively improved with lower defect concentrations,and charge recombination loss is effectively suppressed.Benefiting from the optimized crystal quality of perovskite films,the carbon electrode-based CsPbI_(3) PSCs exhibit a champion efficiency of 18.48%.This represents one of the highest levels among all hole transport layer-free inorganic perovskite solar cells.

Efficient flexible dye-sensitized solar cells from rear illumination based on different morphologies of titanium dioxide photoanode

The TiO_(2) with nanoparticles(NPs),nanowires(NWs),nanorods(NRs)and nanotubes(NTs)structures were prepared by using a in-situ hydrothermal technique,and then proposed as a photoanode for flexible dye-sensitized solar cell(FDSSC).The influences of the morphology of TiO_(2) on the photovoltaic performances of FDSSCs were investigated.Under rear illumination of 100 mW·cm^(−2),the power conversion efficiencies of FDSSCs achieved 6.96%,7.36%,7.65%,and 7.83%with the TiO_(2) photoanodes of NPs,NWs,NRs,and NTs and PEDOT counter electrode.The FDSSCs based on TiO_(2) NRs and NTs photoanodes have higher short circuit current densities and power conversion efficiencies than that of the others.The enhanced power conversion efficiency is responsible for their nanotubes and rod-shaped ordered structures,which are more beneficial to transmission of electron and hole in semiconductor compared to the TiO_(2) nanoparticles and nanowires disordered structure.

Minimizing interfacial energy losses in inverted perovskite solar cells by a dipolar stereochemical 2D perovskite interface

Inverted perovskite solar cells(PSCs) have attracted broad research and industrial interest owing to their suppressed hysteresis,cost-effectiveness,and easy-fabrication.However,the issue of non-radiative recombination losses at the n-type interface between the perovskite and fullerene has impeded further improvement of photovoltaic performance.Here,we modify the n-type interface of FAPbI_(3) perovskite films by constructing a stereochemical two-dimensional(2D) perovskite interlayer,in which the organic cations comprise both pyridine and ammonium groups.The pyridine N donor can create stable bonding with the surface-uncoordinated Pb on the perovskite,thereby passivating the shallow-level defects and enhancing the air stability of the film.Furthermore,the pyridine N donor also offers a positive polar interface to decrease the surface work function of the perovskite film,enabling n-type modification.Ultimately,we employ a p-i-n photovoltaic(PV) device with the positive dipole interlayer at perovskite/fullerene contact and achieve remarkable photoelectric conversion efficiency(PCE) of 22.0%.

Maskless fabrication of quasi-omnidirectional V-groove solar cells using an alkaline solution-based method

Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.

Interfacial modification using the cross-linkable tannic acid for highly-efficient perovskite solar cells with excellent stability

Although the performance of perovskite solar cells(PSCs)has been dramatically increased in recent years,stability is still the main obstacle preventing the PSCs from being commercial.PSC device instability can be caused by a variety of reasons,including ions diffusion,surface and grain boundary defects,etc.In this work,the cross-linkable tannic acid(TA)is introduced to modify perovskite film through post-treatment method.The numerous organic functional groups(–OH and C=O)in TA can interact with the uncoordinated Pb^(2+)and I^(-)ions in perovskite,thus passivating defects and inhibiting ions diffusion.In addition,the formed TA network can absorb a small amount of the residual moisture inside the device to protect the perovskite layer.Furthermore,TA modification regulates the energy level of perovskite,and reduces interfacial charge recombination.Ultimately,following TA treatment,the device efficiency is increased significantly from 21.31%to 23.11%,with a decreased hysteresis effect.Notably,the treated device shows excellent air,thermal,and operational stability.In light of this,the readily available,inexpensive TA has the potential to operate as a multipurpose interfacial modifier to increase device efficiency while also enhancing device stability.

End-group modulation of phenazine based non-fullerene acceptors for efficient organic solar cells with high open-circuit voltage

Phenazine-based non-fullerene acceptors(NFAs)have demonstrated great potential in improving the power conversion efficiency(PCE)of organic solar cells(OSCs).Halogenation is known to be an effective strategy for increasing optical absorption,refining energy levels,and improving molecular packing in organic semiconductors.Herein,a series of NFAs(Pz IC-4H,Pz IC-4F,Pz IC-4Cl,Pz IC-2Br)with phenazine as the central core and with/without halogen-substituted(dicyanomethylidene)-indan-1-one(IC)as the electron-accepting end group were synthesized,and the effect of end group matched phenazine central unit on the photovoltaic performance was systematically studied.Synergetic photophysical and morphological analyses revealed that the PM6:Pz IC-4F blend involves efficient exciton dissociation,higher charge collection and transfer rates,better crystallinity,and optimal phase separation.Therefore,OSCs based on PM6:Pz IC-4F as the active layer exhibited a PCE of 16.48%with an open circuit voltage(Voc)and energy loss of 0.880 V and 0.53 e V,respectively.Accordingly,this work demonstrated a promising approach by designing phenazine-based NFAs for achieving high-performance OSCs.

Vertical plane depth-resolved surface potential and carrier separation characteristics in flexible CZTSSe solar cells with over 12% efficiency

Cu2ZnSn(S,Se)4(CZTSSe)solar cells have resource distribution and economic advantages.The main cause of their low efficiency is carrier loss resulting from recombination of photo-generated electron and hole.To overcome this,it is important to understand their electron-hole behavior characteristics.To determine the carrier separation characteristics,we measured the surface potential and the local current in terms of the absorber depth.The elemental variation in the intragrains(IGs)and at the grain boundaries(GBs)caused a band edge shift and bandgap(Eg)change.At the absorber surface and subsurface,an upward Ec and Ev band bending structure was observed at the GBs,and the carrier separation was improved.At the absorber center,both upward Ec and Ev and downward Ec-upward Ev band bending structures were observed at the GBs,and the carrier separation was degraded.To improve the carrier separation and suppress carrier recombination,an upward Ec and Ev band bending structure at the GBs is desirable.

Interfacial engineering through lead binding using crown ethers in perovskite solar cells

In the domain of perovskite solar cells(PSCs),the imperative to reconcile impressive photovoltaic performance with lead-related issue and environmental stability has driven innovative solutions.This study pioneers an approach that not only rectifies lead leakage but also places paramount importance on the attainment of rigorous interfacial passivation.Crown ethers,notably benzo-18-crown-6-ether(B18C6),were strategically integrated at the perovskite-hole transport material interface.Crown ethers exhibit a dual role:efficiently sequestering and immobilizing Pb^(2+)ions through host-guest complexation and simultaneously establishing a robust interfacial passivation layer.Selected crown ether candidates,guided by density functional theory(DFT)calculations,demonstrated proficiency in binding Pb2+ions and optimizing interfacial energetics.Photovoltaic devices incorporating these materials achieved exceptional power conversion efficiency(PCE),notably 21.7%for B18C6,underscoring their efficacy in lead binding and interfacial passivation.Analytical techniques,including time-of-flight secondary ion mass spectrometry(ToF-SIMS),ultraviolet photoelectron spectroscopy(UPS),time-resolved photoluminescence(TRPL),and transient absorption spectroscopy(TAS),unequivocally affirmed Pb^(2+)ion capture and suppression of non-radiative recombination.Notably,these PSCs maintained efficiency even after enduring 300 h of exposure to 85%relative humidity.This research underscores the transformative potential of crown ethers,simultaneously addressing lead binding and stringent interfacial passivation for sustainable PSCs poised to commercialize and advance renewable energy applications.

Stabilizing perovskite precursors with the reductive natural amino acid for printable mesoscopic perovskite solar cells

Solution processability significantly advances the development of highly-efficient perovskite solar cells.However,the precursor solution tends to undergo irreversible degradation reactions,impairing the device performance and reproducibility.Here,we utilize a reductive natural amino acid,Nacetylcysteine(NALC),to stabilize the precursor solution for printable carbon-based hole-conductorfree mesoscopic perovskite solar cells.We find that I_(2) can be generated in the aged solution containing methylammonium iodide(MI) in an inert atmosphere and speed up the MA-FA^(+)(formamidinium) reaction which produces large-size cations and hinders the formation of perovskite phase.NALC effectively stabilizes the precursor via its sulfhydryl group which reduces I_(2) back to I^(-)and provides H^(+).The NALC-stabilized precursor which is aged for 1440 h leads to devices with a power conversion efficiency equivalent to 98% of that for devices prepared with the fresh precursor.Furthermore,NALC improves the device power conversion efficiency from 16.16% to 18.41% along with enhanced stability under atmospheric conditions by modifying grain boundaries in perovskite films and reducing associated defects.