Design of Cold-Junction Compensation and Disconnection Detection Circuits of Various Thermocouples and Implementation of Multi-Channel Interfaces Using Them-A Secondary Publication

Cold-junction compensation(CJC)and disconnection detection circuit design of various thermocouples(TC)and multi-channel TC interface circuits were designed.The CJC and disconnection detection circuit consists of a CJC semiconductor device,an instrumentation amplifier(IA),two resistors,and a diode for disconnection detection.Based on the basic circuit,a multi-channel interface circuit was also implemented.The CJC was implemented using compensation semiconductor and IA,and disconnection detection was detected by using two resistors and a diode so that IA input voltage became-0.42 V.As a result of the experiment using R-type TC,the error of the designed circuit was reduced from 0.14 mV to 3μV after CJC in the temperature range of 0°C to 1400°C.In addition,it was confirmed that the output voltage of IA was saturated from 88 mV to-14.2 V when TC was disconnected from normal.The output voltage of the designed circuit was 0 V to 10 V in the temperature range of 0°C to 1400°C.The results of the 4-channel interface experiment using R-type TC were almost identical to the CJC and disconnection detection results for each channel.The implemented multi-channel interface has a feature that can be applied equally to E,J,K,T,R,and S-type TCs by changing the terminals of CJC semiconductor devices and adjusting the IA gain.

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Indispensable gutter layers in thin-film composite membranes for carbon capture

Industrial thin-film composite(TFC)membranes achieve superior gas separation properties from high-performance selective layer materials,while the success of membrane technology relies on high-performance gutter layers to achieve production scalability and low-cost manufacturing.However,the current literature predominantly focuses on the design of polymer architectures to obtain high permeability and selectivity,while the art of fabricating gutter layers is usually safeguarded by industrial manufacturers and appears lackluster to academic researchers.This is the first report aiming to provide a comprehensive and critical review of state-of-the-art gutter layer materials and their design and modification to enable TFC membranes with superior separation performance.We first elucidate the importance of the gutter layer on membrane performance through modeling and experimental results.Then various gutter layer materials used to obtain high-performance composite membranes are critically reviewed,and the strategies to improve their compatibility with the selective layer are highlighted,such as oxygen plasma treatment,polydopamine deposition,and surface grafting.Finally,we present the opportunities of the gutter layer design for practical applications.

Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

Numerical Study and Optimization of CZTS-Based Thin-Film Solar Cell Structure with Different Novel Buffer-Layer Materials Using SCAPS-1D Software

This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd0.4Zn0.6S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd0.4Zn0.6S, ZnS and CdS are comparable, Cd0.4Zn0.6S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd0.4Zn0.6S, ZnS and CdS showed that optimum buffer-layer thickness for Cd0.4Zn0.6S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously.

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Dynamic Calibration of the Cutting Temperature Sensor of NiCr/NiSi Thin-film Thermocouple

In high-speed cutting, natural thermocouple, artificial thermocouple and infrared radiation temperature measurement are usually adopted for measuring cutting temperature, but these methods have difficulty in measuring transient temperature accurately of cutting area on account of low response speed and limited cutting condition. In this paper, NiCr/NiSi thin-film thermocouples（TFTCs） are fabricated according to temperature characteristic of cutting area in high-speed cutting by means of advanced twinned microwave electro cyclotron resonance（MW-ECR） plasma source enhanced radio frequency（RF） reaction non-balance magnetron sputtering technique, and can be used for transient cutting temperature measurement. The time constants of the TFTCs with different thermo-junction film width are measured at four kinds of sampling frequency by using Ultra-CFR short pulsed laser system that established. One-dimensional unsteady heat conduction model is constructed and the dynamic performance is analyzed theoretically. It can be seen from the analysis results that the NiCr/NiSi TFTCs are suitable for measuring transient temperature which varies quickly, the response speed of TFTCs can be obviously improved by reducing the thickness of thin-film, and the area of thermo-junction has little influence on dynamic response time. The dynamic calibration experiments are made on the constructed dynamic calibration system, and the experimental results confirm that sampling frequency should be larger than 50 kHz in dynamic measurement for stable response time, and the shortest response time is 0.042 ms. Measurement methods and devices of cutting heat and cutting temperature measurement are developed and improved by this research, which provide practical methods and instruments in monitoring cutting heat and cutting temperature for research and production in high-speed machining.

All-Solid-State Thin-Film Lithium-Sulfur Batteries

Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Things microdevice.However,the volatility in high vacuum and intrinsic sluggish kinetics of S hinder researchers from empirically integrating it into allsolid-state thin-film batteries,leading to inexperience in fabricating all-solid-state thin-film Li-S batteries(TFLSBs).Herein,for the first time,TFLSBs have been successfully constructed by stacking vertical graphene nanosheets-Li2S(VGsLi2S)composite thin-film cathode,lithium-phosphorous-oxynitride(LiPON)thin-film solid electrolyte,and Li metal anode.Fundamentally eliminating Lipolysulfide shuttle effect and maintaining a stable VGs-Li2S/LiPON interface upon prolonged cycles have been well identified by employing the solid-state Li-S system with an“unlimited Li”reservoir,which exhibits excellent longterm cycling stability with a capacity retention of 81%for 3,000 cycles,and an exceptional high temperature tolerance up to 60℃.More impressively,VGs-Li2S-based TFLSBs with evaporated-Li thin-film anode also demonstrate outstanding cycling performance over 500 cycles with a high Coulombic efficiency of 99.71%.Collectively,this study presents a new development strategy for secure and high-performance rechargeable all-solid-state thin-film batteries.

Stability of high-salinity-enhanced foam:Surface behavior and thin-film drainage

Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg/L.However,the synergistic effects between CHSB and salt have not been fully understood.This study utilized bulk foam tests and thin-film interferometry to comprehensively investigate the macroscopic and microscopic decay processes of CHSB foams with NaCl concentrations ranging from 2.3×10^(4)to 2.1×10^(5)mg/L.We focused on the dilatational viscoelasticity and dynamic thin-film thickness to elucidate the high-salinity-enhanced foam stability.The increase in dilatational viscoelasticity and supramolecular oscillating structural force(Π_(OS))with salinity dominated the superior stability of CHSB foam.With increasing salinity,more CHSB molecules accumulated on the surface with a lower diffusion rate,leading to high dilatational moduli and surface elasticity,thus decelerating coarsening and coalescence.Meanwhile,the number density of micelles in the thin film increased with salinity,resulting in increasedΠOS.Consequently,the energy barrier for stepwise thinning intensified,and the thin-film drainage slowed.This work conduces to understand the mechanisms behind the pronounced stability of betaine foam and can promote the widespread application of foam in harsh reservoirs.

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems

Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

Enhanced efficiency of the Sb_(2)Se_(3)thin-film solar cell by the anode passivation using an organic small molecular of TCTA

Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.

High-performance amorphous In–Ga–Zn–O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO_(2) heterojunction charge trapping stack

Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.

Advances in mobility enhancement of ITZO thin-film transistors:a review

Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.

连续热电偶检定炉的设计与研制

连续热电偶是基于塞贝克效应制成的一种新型温度传感器。在校准连续热电偶时,热电偶检定炉是较为重要的热源之一。该研究在传统检定炉的基础之上设计四温区检定炉,通过对炉体和温度控制的改造,对多种控温模式的设计,研制出能够适用连续热电偶等多种高温传感器校准的热源。

NADCAP热处理认证高温测量技术研究

NADCAP认证是国际航空工业范围内一致认可的审核标准,取得NADCAP认证资质是企业进军国际航空市场,加入航空供应链的必备条件,基于NADCAP热处理认证要求,结合自身NADCAP认证项目工作经验,深入论述了AMS2750G高温测量技术,首先介绍了AMS2750G高温测量法对于热处理设备的等级分类要求和6种不同类型的仪表配置,然后展示了8种标准热电偶的材料成分和热电特性,归纳总结出了不同用途下廉金属热电偶和贵金属热电偶的校准周期、允差要求,其次解析了高温测量的基本方法,包括温度均匀性测试中传感器的布置要求、测试温度点的选择方法,最后介绍了系统精度测试的原理、技术要求和过程注意事项,该研究为冶金热处理行业和高温测量技术人员提供了思路,为航空制造业国际贸易往来提供了技术基础。

旋转部件温度参数同步无线测量技术研究

针对旋转部件温度参数原位同步测量和数据无线传输应用需求,研究了电能无线传输技术和空间光通信技术,设计了一套8通道小型温度参数遥测系统。该系统通过热电偶和铂电阻传感器实现8路温度参数的高精度准确测量,采用电磁感应和红外光通信技术实现电能和采集数据的同步无线传输。系统分析软件完成数据的实时存储、解析和可视化显示。搭建了20000 r/min的模拟旋转环境测试平台,进行系统功能和性能验证。系统温度采集精度优于0.15%,无线传输距离为15 mm,电能传输输出峰值功率可达5 V/400 mA,实测通信速率为10 Mbit/s,8通道同步采样速率为56 kHz。该系统实现了温度参数的分布式、高精度获取,为旋转部件的研制和维护提供了准确的温度依据。

高精度NiCr/NiSi薄膜热电偶高温测试系统

针对航空发动机涡轮叶片和燃烧室内壁等高温恶劣环境下对温度测量的迫切需求,提出了一种基于薄膜热电偶的高精度测温方法。采用磁控溅射法在SiC衬底上制备了NiCr/NiSi薄膜热电偶。完成了薄膜热电偶的设计与制备,并设计了一套高精度温度数据采集系统,主控芯片采用STM32,数据采集芯片采用16位高精度芯片ADS1118,实现了对高温恶劣环境下温度数据的实时采集。结果表明:设计制备的NiCr/NiSi薄膜热电偶能够实现-40~1000℃温度区间稳定测温,高精度测温系统与标准温度测量系统相比误差优于±0.4%,为高温恶劣环境下温度测量提供了有效且可靠的解决方法。

连续热电偶的计量特性

通过研制四温区测量炉组成热电偶校准装置,对连续热电偶进行校准及不确定度评定,了解和掌握该型传感器的计量特性。最终得出连续热电偶对K型分度表的整体偏移修正为+28℃,扩展不确定度为3.2℃,均匀性为5~8℃,为使用人员和研究人员修正提供技术依据。

高温测量降本增效实践与研究

旨在研究高温测量过程降本增效的关键策略:聚焦加热炉测温优化、热偶使用管理降本方法、计量过程数据高效处理。在探究这些策略的过程中,炉顶穿孔引导测温方法、热偶维修技术以及帆软数据分析展示模块成为实现高温测量过程降本增效目标的重要手段。穿孔引导测温方法操作便捷,不仅提升了测温效率,还提升了测温过程的稳定性和准确性。同时,针对热电偶使用,开发出了热电偶维修裁剪工艺,增加了热电偶循环利用率,减少了热电偶使用成本。在数据处理方面,帆软数据报表模块的应用彰显了其在实现计量过程数据高效处理上的优势。通过该平台,生产数据可以更为直观、清晰地呈现,同时也提供了对数据进行深入分析的功能。通过实际生产案例的验证,这些优化措施显著提高了生产效率、降低了成本。更重要的是,这些策略的实施对于冶金行业的可持续发展和提升竞争力具有重要意义。