In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS pr...In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS process. By embedding a p+implant region into the drain of NMOS in the traditional LVTSCR, a reversed Zener diode is formed by the p+implant region and the n+bridge, which helps to improve the holding voltage and decrease the snapback region.The physical mechanisms of the LVTSCR and DC-LVTSCR are investigated in detail by transmission line pulse(TLP)tests and TCAD simulations. The TLP test results show that, compared with the traditional LVTSCR, the DC-LVTSCR exhibits a higher holding voltage of 6.2 V due to the embedded clamping diode. By further optimizing a key parameter of the DC-LVTSCR, the holding voltage can be effectively increased to 8.7 V. Therefore, the DC-LVTSCR is a promising ESD protection device for circuits with the operation voltage of 5.5–7 V.展开更多
为改善变流器单边可控下开绕组永磁同步发电机(permanent magnet synchronous generator,PMSG)的运行性能,提出了三电平中点钳位式(neutral point clamped,NPC)变流器和二极管整流桥集成供电的单边可控开绕组PMSG系统拓扑结构。通过建...为改善变流器单边可控下开绕组永磁同步发电机(permanent magnet synchronous generator,PMSG)的运行性能,提出了三电平中点钳位式(neutral point clamped,NPC)变流器和二极管整流桥集成供电的单边可控开绕组PMSG系统拓扑结构。通过建立开绕组PMSG数学模型,研究了基于三电平变流器的单边可控开绕组PMSG系统控制策略,并结合三电平变流器的中点电压(neutral point potential,NPP)波动机制,分析了在此结构下三电平变流器关于调制度范围和功率因数角范围的运行性能。最后,通过实验验证了所提控制策略的正确性和可行性。展开更多
基金National Natural Science Foundation of China(Grant No.61504049)the China Postdoctoral Science Foundation(Grant No.2016M600361).
文摘In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier(LVTSCR), a novel LVTSCR with embedded clamping diode(DC-LVTSCR) is proposed and verified in a 0.18-μm CMOS process. By embedding a p+implant region into the drain of NMOS in the traditional LVTSCR, a reversed Zener diode is formed by the p+implant region and the n+bridge, which helps to improve the holding voltage and decrease the snapback region.The physical mechanisms of the LVTSCR and DC-LVTSCR are investigated in detail by transmission line pulse(TLP)tests and TCAD simulations. The TLP test results show that, compared with the traditional LVTSCR, the DC-LVTSCR exhibits a higher holding voltage of 6.2 V due to the embedded clamping diode. By further optimizing a key parameter of the DC-LVTSCR, the holding voltage can be effectively increased to 8.7 V. Therefore, the DC-LVTSCR is a promising ESD protection device for circuits with the operation voltage of 5.5–7 V.
文摘为改善变流器单边可控下开绕组永磁同步发电机(permanent magnet synchronous generator,PMSG)的运行性能,提出了三电平中点钳位式(neutral point clamped,NPC)变流器和二极管整流桥集成供电的单边可控开绕组PMSG系统拓扑结构。通过建立开绕组PMSG数学模型,研究了基于三电平变流器的单边可控开绕组PMSG系统控制策略,并结合三电平变流器的中点电压(neutral point potential,NPP)波动机制,分析了在此结构下三电平变流器关于调制度范围和功率因数角范围的运行性能。最后,通过实验验证了所提控制策略的正确性和可行性。
