The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area o...The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.展开更多
With the development of semiconductor technology,the size of transistors continues to shrink.In complex radiation environments in aerospace and other fields,small-sized circuits are more prone to soft error(SE).Curren...With the development of semiconductor technology,the size of transistors continues to shrink.In complex radiation environments in aerospace and other fields,small-sized circuits are more prone to soft error(SE).Currently,single-node upset(SNU),double-node upset(DNU)and triple-node upset(TNU)caused by SE are relatively common.TNU’s solution is not yet fully mature.A novel and low-cost TNU self-recoverable latch(named NLCTNURL)was designed which is resistant to harsh radiation effects.When analyzing circuit resiliency,a double-exponential current source is used to simulate the flipping behavior of a node’s stored value when an error occurs.Simulation results show that the latch has full TNU self-recovery.A comparative analysis was conducted on seven latches related to TNU.Besides,a comprehensive index combining delay,power,area and self-recovery—DPAN index was proposed,and all eight types of latches from the perspectives of delay,power,area,and DPAN index were analyzed and compared.The simulation results show that compared with the latches LCTNURL and TNURL which can also achieve TNU self-recoverable,NLCTNURL is reduced by 68.23%and 57.46%respectively from the perspective of delay.From the perspective of power,NLCTNURL is reduced by 72.84%and 74.19%,respectively.From the area perspective,NLCTNURL is reduced by about 28.57%and 53.13%,respectively.From the DPAN index perspective,NLCTNURL is reduced by about 93.12%and 97.31%.The simulation results show that the delay and power stability of the circuit are very high no matter in different temperatures or operating voltages.展开更多
AZ31-4.6% Mg2Si （mass fraction） composite was prepared by conventional casting method. Repetitive upsetting （RU） was applied to severely deforming the as-cast composite at 400 ℃ for 1, 3, and 5 passes. Finite ele...AZ31-4.6% Mg2Si （mass fraction） composite was prepared by conventional casting method. Repetitive upsetting （RU） was applied to severely deforming the as-cast composite at 400 ℃ for 1, 3, and 5 passes. Finite element analysis of the material flow indicates that deformation concentrates in the bottom region of the sample after 1 pass, and much more uniform deformation is obtained after 5 passes. During multi-pass RU process, both dendritic and Chinese script type Mg2Si phases are broken up into smaller particles owing to the shear stress forced by the matrix. With the increasing number of RU passes, finer grain size and more homogeneous distribution of Mg2Si particles are obtained along with significant enhancement in both strength and ductility. AZ31-4.6%Mg2Si composite exhibits tensile strength of 284 MPa and elongation of 9.8%after 5 RU passes at 400 ℃ compared with the initial 128 MPa and 5.4%of original AZ31-4.6%Mg2Si composite.展开更多
We study the problem of multiple node upset （MNU） using three-dimensional device simulation. The results show the transient floating node and charge lateral diffusion are the key reasons for MNU. We compare the MNU ...We study the problem of multiple node upset （MNU） using three-dimensional device simulation. The results show the transient floating node and charge lateral diffusion are the key reasons for MNU. We compare the MNU with multiple bit upset （MBU）,and find that their characteristics are different. Methods to avoid MNU are also discussed.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.
基金The Open Project Program of the Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems(2023SZKF17)the University Synergy Innovation Program of Anhui Province(GXXT-2022-080)。
文摘With the development of semiconductor technology,the size of transistors continues to shrink.In complex radiation environments in aerospace and other fields,small-sized circuits are more prone to soft error(SE).Currently,single-node upset(SNU),double-node upset(DNU)and triple-node upset(TNU)caused by SE are relatively common.TNU’s solution is not yet fully mature.A novel and low-cost TNU self-recoverable latch(named NLCTNURL)was designed which is resistant to harsh radiation effects.When analyzing circuit resiliency,a double-exponential current source is used to simulate the flipping behavior of a node’s stored value when an error occurs.Simulation results show that the latch has full TNU self-recovery.A comparative analysis was conducted on seven latches related to TNU.Besides,a comprehensive index combining delay,power,area and self-recovery—DPAN index was proposed,and all eight types of latches from the perspectives of delay,power,area,and DPAN index were analyzed and compared.The simulation results show that compared with the latches LCTNURL and TNURL which can also achieve TNU self-recoverable,NLCTNURL is reduced by 68.23%and 57.46%respectively from the perspective of delay.From the perspective of power,NLCTNURL is reduced by 72.84%and 74.19%,respectively.From the area perspective,NLCTNURL is reduced by about 28.57%and 53.13%,respectively.From the DPAN index perspective,NLCTNURL is reduced by about 93.12%and 97.31%.The simulation results show that the delay and power stability of the circuit are very high no matter in different temperatures or operating voltages.
基金Projects(51074106,51374145)supported by the National Natural Science Foundation of ChinaProject(09JC1408200)supported by the Science and Technology Commission of Shanghai Municipality,China+1 种基金Project(2014M561466)supported by China Postdoctoral Science FoundationProject(14R21411000)supported by Shanghai Postdoctoral Scientific Program,China
文摘AZ31-4.6% Mg2Si （mass fraction） composite was prepared by conventional casting method. Repetitive upsetting （RU） was applied to severely deforming the as-cast composite at 400 ℃ for 1, 3, and 5 passes. Finite element analysis of the material flow indicates that deformation concentrates in the bottom region of the sample after 1 pass, and much more uniform deformation is obtained after 5 passes. During multi-pass RU process, both dendritic and Chinese script type Mg2Si phases are broken up into smaller particles owing to the shear stress forced by the matrix. With the increasing number of RU passes, finer grain size and more homogeneous distribution of Mg2Si particles are obtained along with significant enhancement in both strength and ductility. AZ31-4.6%Mg2Si composite exhibits tensile strength of 284 MPa and elongation of 9.8%after 5 RU passes at 400 ℃ compared with the initial 128 MPa and 5.4%of original AZ31-4.6%Mg2Si composite.
文摘We study the problem of multiple node upset （MNU） using three-dimensional device simulation. The results show the transient floating node and charge lateral diffusion are the key reasons for MNU. We compare the MNU with multiple bit upset （MBU）,and find that their characteristics are different. Methods to avoid MNU are also discussed.
