An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical f...An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p^+/n^+region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n^+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm^2.展开更多
以磁阀式可控电抗器(magnetically controlled reactors,MCR)无功补偿装置作为研究对象,阐述其工作原理和电磁特性。选取2个相同参数的饱和变压器作为MCR的本体,在MATLAB/Sim Power System平台上搭建仿真模型,通过设定饱和变压器的额定...以磁阀式可控电抗器(magnetically controlled reactors,MCR)无功补偿装置作为研究对象,阐述其工作原理和电磁特性。选取2个相同参数的饱和变压器作为MCR的本体,在MATLAB/Sim Power System平台上搭建仿真模型,通过设定饱和变压器的额定容量、额定电压、自耦比、绕组电阻等参数,得到不同触发角的MCR工作电流和磁链波形。仿真结果与铁心运行时的电磁特性理论分析结果相符,说明仿真模型正确。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51677149)
文摘An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p^+/n^+region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n^+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm^2.
文摘以磁阀式可控电抗器(magnetically controlled reactors,MCR)无功补偿装置作为研究对象,阐述其工作原理和电磁特性。选取2个相同参数的饱和变压器作为MCR的本体,在MATLAB/Sim Power System平台上搭建仿真模型,通过设定饱和变压器的额定容量、额定电压、自耦比、绕组电阻等参数,得到不同触发角的MCR工作电流和磁链波形。仿真结果与铁心运行时的电磁特性理论分析结果相符,说明仿真模型正确。
