利用猕猴运动皮层神经元峰电位数信号估计其手指移动位置是一神经解码问题,通常采用时不变线性模型(Time-invariant linear model,TILM)来解决.本文分析了传统TILM模型的时间相关性问题,依据猕猴手指移动位置的连续性特点,采用一种新的...利用猕猴运动皮层神经元峰电位数信号估计其手指移动位置是一神经解码问题,通常采用时不变线性模型(Time-invariant linear model,TILM)来解决.本文分析了传统TILM模型的时间相关性问题,依据猕猴手指移动位置的连续性特点,采用一种新的模型去解码其手指移动位置,称之为卷积空间模型(Convolution space model,CSM).与传统的模型相比,卷积空间模型不但将当前时刻的状态与前一个时刻建立了相关,而且与前多个时刻的状态也有相关.在实验中,利用公开数据来评判本文方法的解码性能,实验结果表明,传统方法的解码误差要大于CSM模型的方法,因此CSM模型具有更好的解码准确性.展开更多
A solar panel is described,in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector-absorber tandem...A solar panel is described,in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector-absorber tandem,which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovoltaic efficiency can be maintained,with thermal performance slightly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.展开更多
A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture th...A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture the a-BZN antifuse.The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V.A large off-state resistance of more than 1 GΩfor the a-BZN antifuse was demonstrated.The surface micrograph of the ruptured a-BZN antifuses was illustrated.Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1Ωof the a-BZN antifuse were exhibited.The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate（cp-BZN） antifuse and gate oxide antifuse was compared and analyzed.展开更多
文摘利用猕猴运动皮层神经元峰电位数信号估计其手指移动位置是一神经解码问题,通常采用时不变线性模型(Time-invariant linear model,TILM)来解决.本文分析了传统TILM模型的时间相关性问题,依据猕猴手指移动位置的连续性特点,采用一种新的模型去解码其手指移动位置,称之为卷积空间模型(Convolution space model,CSM).与传统的模型相比,卷积空间模型不但将当前时刻的状态与前一个时刻建立了相关,而且与前多个时刻的状态也有相关.在实验中,利用公开数据来评判本文方法的解码性能,实验结果表明,传统方法的解码误差要大于CSM模型的方法,因此CSM模型具有更好的解码准确性.
文摘A solar panel is described,in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector-absorber tandem,which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovoltaic efficiency can be maintained,with thermal performance slightly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.
基金Project supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices(No.KFJJ200909)
文摘A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture the a-BZN antifuse.The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V.A large off-state resistance of more than 1 GΩfor the a-BZN antifuse was demonstrated.The surface micrograph of the ruptured a-BZN antifuses was illustrated.Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1Ωof the a-BZN antifuse were exhibited.The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate（cp-BZN） antifuse and gate oxide antifuse was compared and analyzed.
