飞行时间二次离子质谱仪(Time of flight secondary ion mass spectrometry,TOF-SIMS)对所有元素具有极高的检测灵敏度,应用此方法研究了经550℃退火处理,Au/AuBe/Au与GaP金属-半导体的各元素强度分布特性,依次分析金属表面、金属层内...飞行时间二次离子质谱仪(Time of flight secondary ion mass spectrometry,TOF-SIMS)对所有元素具有极高的检测灵敏度,应用此方法研究了经550℃退火处理,Au/AuBe/Au与GaP金属-半导体的各元素强度分布特性,依次分析金属表面、金属层内、金属-半导体界面、半导体内部,使用O2+正离子与Cs+负离子分析Au、Be、O、Ga、P五类元素在各层内的强度,观察金属层与半导体界面内Be、O、Au、P峰位置的各元素SIMS图,表明在金属表面3~10nm内含有Au、Be、O、Ga、P元素,在金属内部,O元素在AuBe层有明显分布,在半导体材料GaP层内含有Be、Au元素,且Be的扩散深度比Au要深,在AuBe层及界面处用XPS分析化学组分。展开更多
This study synthesised a zincic salt(ZS)as a depressant for marmatite-galena separation.The effect of ZS on the flotation of marmatite and galena was investigated through micro-flotation tests.88.89%of the galena was ...This study synthesised a zincic salt(ZS)as a depressant for marmatite-galena separation.The effect of ZS on the flotation of marmatite and galena was investigated through micro-flotation tests.88.89%of the galena was recovered and 83.39%of the marmatite was depressed with ZS dosage of 750 mg·L^(−1)at pH=4.The depression mechanism of ZS on marmatite was investigated by a variety of techniques,including adsorption measurements,Fourier transform infrared(FTIR),X-ray photoelectron spectroscopic(XPS)analysis,and time of flight secondary ion mass spectrometry(ToF-SIMS).Results of adsorption tests and FTIR reveal that ZS adsorbed on marmatite surface and impeded the subsequent adsorption of butyl xanthate(BX).The results of XPS and ToF-SIMS indicate that the ZnO_(2)^(3-)released by ZS could be chemisorbed on the marmatite surface and depress marmatite flotation.展开更多
In accordance with the confusion on classification of source rocks, the authors raised a source rock classification for its enriched and dispersed organic matter types based on both Alpern’s idea and maceral genesis/...In accordance with the confusion on classification of source rocks, the authors raised a source rock classification for its enriched and dispersed organic matter types based on both Alpern’s idea and maceral genesis/composition. The determined rock type is roughly similar to palynofacies of Combaz , whereas it is "rock maceral facies (for coal viz. coal facies)" in strictly speaking. Therefore, it is necessary to use the organic ingredients classification proposed by the authors so that it can be used for both maceral analysis and environment research . This source rock classification not only shows sedimentology and diagenetic changes but also acquires organic matter type even if hydrocarbon potential derived from maceral’s geochemical parameters. So, it is considered as genetic classification. The "rock maceral facies" may be transformed to sedimentary organic facies , which is used as quantitative evaluation means if research being perfect.Now, there are many models in terms of structure either for coal or for kerogen. In our opinion, whatever coal or kerogen ought be polymer, then we follow Combaz’s thought and study structure of amorphous kerogens which are accordance with genetic mechanism showing biochemical and geochemical process perfectly. Here, we use the time of flight secondary ion mass spectrometry (TOFSIMS) to expand Combaz’s models from three to five. They are also models for coal.展开更多
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting ...This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.展开更多
飞行时间质谱仪(ti me-of-flight mass spectrometer,TOF-MS)在分子团簇的激光电离/解离动力学研究中广泛使用。文章报道了在用脉冲355nm的YAG激光进行水/甲醇二元团簇的多光子电离研究中,发现在电离激光相对于脉冲分子束的不同延时下,...飞行时间质谱仪(ti me-of-flight mass spectrometer,TOF-MS)在分子团簇的激光电离/解离动力学研究中广泛使用。文章报道了在用脉冲355nm的YAG激光进行水/甲醇二元团簇的多光子电离研究中,发现在电离激光相对于脉冲分子束的不同延时下,即激光作用于脉冲束的不同位置,飞行时间质谱仪测得的离子的质谱峰值发生漂移。在激光作用于脉冲束的中段时,离子的信号最强,同时离子的峰值漂移达到最大。分析认为:这种峰值漂移不是因为新质量数谱峰的出现,而是离子在穿越质谱仪的离子引出区和加速区极板时发生部分离子吸附,引起极板间电压的起伏造成的。离子在电场起伏下的数值模拟与实验中观测到的离子峰值漂移规律一致。展开更多
文摘飞行时间二次离子质谱仪(Time of flight secondary ion mass spectrometry,TOF-SIMS)对所有元素具有极高的检测灵敏度,应用此方法研究了经550℃退火处理,Au/AuBe/Au与GaP金属-半导体的各元素强度分布特性,依次分析金属表面、金属层内、金属-半导体界面、半导体内部,使用O2+正离子与Cs+负离子分析Au、Be、O、Ga、P五类元素在各层内的强度,观察金属层与半导体界面内Be、O、Au、P峰位置的各元素SIMS图,表明在金属表面3~10nm内含有Au、Be、O、Ga、P元素,在金属内部,O元素在AuBe层有明显分布,在半导体材料GaP层内含有Be、Au元素,且Be的扩散深度比Au要深,在AuBe层及界面处用XPS分析化学组分。
基金financially supported by the National Natural Science Foundation of China(No.52274283)the Fundamental Research Funds for the Central Universities(No.2022JCCXHH09)+1 种基金the Yueqi Outstanding Scholar award of CUMTB,the Science and Technology Major Project of Ordos City-Iconic Innovation Team(No.202204)the National Key R&D Program of China(Nos.2022YFC2900065 and 2021YFC2902602).
文摘This study synthesised a zincic salt(ZS)as a depressant for marmatite-galena separation.The effect of ZS on the flotation of marmatite and galena was investigated through micro-flotation tests.88.89%of the galena was recovered and 83.39%of the marmatite was depressed with ZS dosage of 750 mg·L^(−1)at pH=4.The depression mechanism of ZS on marmatite was investigated by a variety of techniques,including adsorption measurements,Fourier transform infrared(FTIR),X-ray photoelectron spectroscopic(XPS)analysis,and time of flight secondary ion mass spectrometry(ToF-SIMS).Results of adsorption tests and FTIR reveal that ZS adsorbed on marmatite surface and impeded the subsequent adsorption of butyl xanthate(BX).The results of XPS and ToF-SIMS indicate that the ZnO_(2)^(3-)released by ZS could be chemisorbed on the marmatite surface and depress marmatite flotation.
基金National Natural Science Foundation of China(4 9672 13 1)
文摘In accordance with the confusion on classification of source rocks, the authors raised a source rock classification for its enriched and dispersed organic matter types based on both Alpern’s idea and maceral genesis/composition. The determined rock type is roughly similar to palynofacies of Combaz , whereas it is "rock maceral facies (for coal viz. coal facies)" in strictly speaking. Therefore, it is necessary to use the organic ingredients classification proposed by the authors so that it can be used for both maceral analysis and environment research . This source rock classification not only shows sedimentology and diagenetic changes but also acquires organic matter type even if hydrocarbon potential derived from maceral’s geochemical parameters. So, it is considered as genetic classification. The "rock maceral facies" may be transformed to sedimentary organic facies , which is used as quantitative evaluation means if research being perfect.Now, there are many models in terms of structure either for coal or for kerogen. In our opinion, whatever coal or kerogen ought be polymer, then we follow Combaz’s thought and study structure of amorphous kerogens which are accordance with genetic mechanism showing biochemical and geochemical process perfectly. Here, we use the time of flight secondary ion mass spectrometry (TOFSIMS) to expand Combaz’s models from three to five. They are also models for coal.
基金the Fundamental Research Funds for the National Key Research and Development Project of China(Grant No.2020YFB1807403)the National Natural Science Foundation of China(Grant Nos.62174125 and 62131014)+1 种基金the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX22022 and YJS2213)the Innovation Fund of Xidian University.
文摘This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.
文摘飞行时间质谱仪(ti me-of-flight mass spectrometer,TOF-MS)在分子团簇的激光电离/解离动力学研究中广泛使用。文章报道了在用脉冲355nm的YAG激光进行水/甲醇二元团簇的多光子电离研究中,发现在电离激光相对于脉冲分子束的不同延时下,即激光作用于脉冲束的不同位置,飞行时间质谱仪测得的离子的质谱峰值发生漂移。在激光作用于脉冲束的中段时,离子的信号最强,同时离子的峰值漂移达到最大。分析认为:这种峰值漂移不是因为新质量数谱峰的出现,而是离子在穿越质谱仪的离子引出区和加速区极板时发生部分离子吸附,引起极板间电压的起伏造成的。离子在电场起伏下的数值模拟与实验中观测到的离子峰值漂移规律一致。
