This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitab...This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitable for both 2-D and 3-D applications.Firstly,the governing equations represented by scalar electric potential are discretized by the nodal finite element method(FEM)in space and the finite difference method in time.Secondly,the transient constrained electric field equation on the boundary(TCEFEB)is derived to calculate the normal component of the transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface.Finally,a 2-D numerical example is employed to demonstrate the validity of the proposed method.Furthermore,the comparisons of the numerical accuracy of the proposed method in this paper with the existing FEMs for electric field intensity and charge density on the dielectric interface are conducted.The results show that the numerical accuracy of the proposed method for calculating the normal component of transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface is close to that of nodal electric potential and an order of magnitude higher than those of existing FEMs.展开更多
基金This work was supported by the National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid(No.U1766219).
文摘This paper is devoted to solving the transient electric field and transient charge density on the dielectric interface under the electroquasistatic(EQS)field conditions with high accuracy.The proposed method is suitable for both 2-D and 3-D applications.Firstly,the governing equations represented by scalar electric potential are discretized by the nodal finite element method(FEM)in space and the finite difference method in time.Secondly,the transient constrained electric field equation on the boundary(TCEFEB)is derived to calculate the normal component of the transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface.Finally,a 2-D numerical example is employed to demonstrate the validity of the proposed method.Furthermore,the comparisons of the numerical accuracy of the proposed method in this paper with the existing FEMs for electric field intensity and charge density on the dielectric interface are conducted.The results show that the numerical accuracy of the proposed method for calculating the normal component of transient electric field intensities on the Dirichlet boundary and dielectric interface as well as the transient charge density on the dielectric interface is close to that of nodal electric potential and an order of magnitude higher than those of existing FEMs.
文摘多尺度复杂电子系统的电磁场问题难以用单一的计算电磁学方法进行高效数值计算.基于区域分解方法和惠更斯等效原理,提出了频域广义传输矩阵(generalized transition matrix,GTM)方法:将系统分解为多个子模块,通过电场积分方程(electric field integreal equation,EFIE)把各个子模块的电磁特性进行提炼,再考虑所有子模块之间的电磁耦合,计算系统整体电磁场分布.GTM方法把多尺度问题转化为尺度相对比较单一的问题进行处理,在分析各种复合结构、非均匀各向异性介质、大型相控阵天线等电磁散射特性时,提供了灵活的解决方案.论文给出了GTM在手征介质、开口腔体以及Vivaldi相控阵天线电磁特性分析中的应用算例,当未知量个数压缩到原来的十分之一时,GTM计算结果与直接用矩量法(methed of moment,MoM)求解的计算结果非常吻合.GTM可以简洁地表示目标问题的电磁散射特征,与传统MoM相比,大幅度减少了基函数的数量,具有较高的计算精度和效率.
