SnS and SnS：In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS：In films were studied by X-ray diffraction （XRD） and scanning electron microsco...SnS and SnS：In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS：In films were studied by X-ray diffraction （XRD） and scanning electron microscope （SEM） respectively. Energy dispersive spectroscopy （EDS） showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS：In films were evaluated from the optical transmission spectra.展开更多
1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor（Eg≈3.5eV）,has high transparency in thevisible spectral region（index of refraction,n≈1.9）and resistance to acids and bases at roomtemperature.The SnO&l...1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor（Eg≈3.5eV）,has high transparency in thevisible spectral region（index of refraction,n≈1.9）and resistance to acids and bases at roomtemperature.The SnO<sub>2</sub> thin film.the most useful form in application,has been prepared by avariety of physical and chemical deposition processes.It has been found that undoped SnO<sub>2</sub>films have high resistivity(about 10<sup>8--15</sup>Ω·cm)at room temperature[1].For manyapplications requiring not too low sheet resistance。展开更多
We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposit...We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.展开更多
采用水热法制备硼硫(B/S)共掺杂纳米二氧化钛(B-S-TiO_2),并配制成浆料,利用丝网印刷技术在FTO导电玻璃上制备B-S-TiO_2薄膜;用化学浴沉积(CBD)法制备了CdS量子点敏化B-S-TiO_2薄膜电极,并用X射线衍射(XRD)、电子显微镜(TEM)、元素分析...采用水热法制备硼硫(B/S)共掺杂纳米二氧化钛(B-S-TiO_2),并配制成浆料,利用丝网印刷技术在FTO导电玻璃上制备B-S-TiO_2薄膜;用化学浴沉积(CBD)法制备了CdS量子点敏化B-S-TiO_2薄膜电极,并用X射线衍射(XRD)、电子显微镜(TEM)、元素分析能谱(EDS)和紫外–可见光谱对其进行表征分析;结果显示:B/S共掺杂不会改变TiO_2的晶型,掺杂后的TiO_2吸收边带发生明显红移,吸收强度显著增强;同样用化学浴沉积的方法制备Ni S工作电极,用改性的聚硫化物((CH3)4N)2S/((CH3)4N)2Sn)电解液,组装CdS量子点敏化硼硫(B/S)共掺杂纳米二氧化钛(B-S-TiO_2)太阳能电池,并测试电池光电性能。测试结果表明,在AM1.5G的照射下,电池的能量转化效率(η)由3.21%增大到3.69%,提高了14.9%,电池获得高达(Voc)1.218 V的开路电压和3.42 m A/cm2的短路光电流(Jsc),以及高达88.7%的填充因子(ff)。展开更多
基金supported by the Science Foundation of Shanghai Municipal Commission of Science and Technology （Grant No.03DZ12033）, and the Shanghai Leading Academic Discipline （Grant No.T0101）
文摘SnS and SnS：In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS：In films were studied by X-ray diffraction （XRD） and scanning electron microscope （SEM） respectively. Energy dispersive spectroscopy （EDS） showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS：In films were evaluated from the optical transmission spectra.
基金Supported by the National Natural Science Foundation of China
文摘1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor（Eg≈3.5eV）,has high transparency in thevisible spectral region（index of refraction,n≈1.9）and resistance to acids and bases at roomtemperature.The SnO<sub>2</sub> thin film.the most useful form in application,has been prepared by avariety of physical and chemical deposition processes.It has been found that undoped SnO<sub>2</sub>films have high resistivity(about 10<sup>8--15</sup>Ω·cm)at room temperature[1].For manyapplications requiring not too low sheet resistance。
文摘We report here the influence of thickness on the photosensing properties of copper sulfide (CuS) thin films. The CuS films were deposited onto glass substrate by using a simple and cost effective chemical bath deposition method. The changes in film thickness as a function of time were monitored. The films were characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FE-SEM), optical measurement techniques and electrical measurement. X-ray diffraction results indicate that all the CuS thin films have an orthorhombic (covellite) structure with preferential orientation along (113) direction. The intensity of the diffraction peaks increases as thickness of the film increases. Uniform deposition having nanocrystalline granular morphology distributed over the entire glass substrate was observed through FE-SEM studies. The crystalline and surface properties of the CuS thin films improved with increase in the film thickness. Transmittance (except for 210 nm thick CuS film) together with band gap values was found to decrease with increase in thickness. I-V measurements under dark and illumination condition show that the CuS thin films give a good photoresponse.
文摘采用水热法制备硼硫(B/S)共掺杂纳米二氧化钛(B-S-TiO_2),并配制成浆料,利用丝网印刷技术在FTO导电玻璃上制备B-S-TiO_2薄膜;用化学浴沉积(CBD)法制备了CdS量子点敏化B-S-TiO_2薄膜电极,并用X射线衍射(XRD)、电子显微镜(TEM)、元素分析能谱(EDS)和紫外–可见光谱对其进行表征分析;结果显示:B/S共掺杂不会改变TiO_2的晶型,掺杂后的TiO_2吸收边带发生明显红移,吸收强度显著增强;同样用化学浴沉积的方法制备Ni S工作电极,用改性的聚硫化物((CH3)4N)2S/((CH3)4N)2Sn)电解液,组装CdS量子点敏化硼硫(B/S)共掺杂纳米二氧化钛(B-S-TiO_2)太阳能电池,并测试电池光电性能。测试结果表明,在AM1.5G的照射下,电池的能量转化效率(η)由3.21%增大到3.69%,提高了14.9%,电池获得高达(Voc)1.218 V的开路电压和3.42 m A/cm2的短路光电流(Jsc),以及高达88.7%的填充因子(ff)。
