Magnetic properties of tin-doped ferrites nanoparticles Sn_xFe_(3-x)O_4

Nanoparticles of tin-doped ferrites SnxFe3-xO4 (x=0, 0.1, 0.2, 0.3, 0.4, 1.0) were prepared by the precipitation exchange method. The particles of all specimens are crystalline with mean diameter in the range of 4-8 nm, and the lattice parameters enlarge with increasing tin content. Magnetization and Mssbauer data indicate that the specimens are paramagnetic. The saturation magnetization decreases, as well as the magnetization and the coercive field increase, with increasing tin-content, the possible causes of which were discussed.

Effect of fabrication conditions on the properties of indium tin oxide powders

This paper reports that indium tin oxide （ITO） crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity c and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350℃ and Sn doping content 6～8wt% are determined. The application of ITO in the military camouflage field is proposed.

Doped ceramics of indium oxides for negative permittivity materials in MHz-kHz frequency regions

Negative permittivity has been widely studied in various metamaterials and percolating composites, of which the anomalous dielectric behavior was attributed to critical structural properties of building blocks.Herein, mono-phase ceramics of indium tin oxides(ITO) were sintered for epsilon-negative materials in MHz-k Hz frequency regions. Electrical conductivity and complex permittivity were analyzed with DrudeLorentz oscillator model. Carriers’ characters were measured based on Hall effect and the magnitude and frequency dispersion of negative permittivity were mainly determined by carrier concentration.Temperature-dependent dielectric properties further proved the epsilon-negative behaviors were closely associated with free carriers’ collective responses. It’s found that negative permittivity of ITO ceramics was mainly caused by plasma oscillations of free carriers, while the dielectric loss was mainly attributed to conduction loss. Negative permittivity realized here was related to materials intrinsic nature and this work preliminarily determined the mechanism of negative permittivity in doped ceramics from the perspective of carriers.

A Comparative Study on the Microstructure and Properties of ITO Targets and Thin Films Prepared from Two Different Powders

With the rapid development of indium tin oxide(ITO)in the electronic display industry,choosing which raw powders to prepare high-quality ITO targets has always been a controversial topic.In the work,in order to clearly understand the effect of the raw powders on the microstructure and properties of ITO targets and thin films,tin-doped indium oxide(dITO)and In_(2)O_3-SnO_(2)mixed(mITO)powders were chosen to prepare ITO targets for depositing the films and a comparative study on their microstructure and properties was conducted.It is found that,(1)dITO targets possess a higher solid solubility of tin in indium oxide and more uniform elemental distribution,while there are a higher density,a finer grain size and a higher mass ratio of In_(2)O_3 to SnO_(2)for the mITO targets;(2)dITO films with more coarser columnar grains and a rougher surface prefer to grow along the[100]direction in an Ar atmosphere;(3)the conductive property of ITO films only depends on the doping amount of tin and is independent of the raw powders and the preparation process of the target source;(4)dITO films possess the superior optical property and narrower optical band gap;(5)the etching property of mITO films is superior to that of dITO films due to the lower solid solubility of tin in indium oxide.