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Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator
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作者 安兴涛 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第10期464-468,共5页
The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulat( is theoretically investigated. Due to the changes of the shape and position of the Fermi surface... The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulat( is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrie the transport processes can be divided into three kinds: the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the currenl voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltag and then a large peak-to-valley current ratio can be obtained. 展开更多
关键词 topological insulator negative differential conductance ferromagnetic barrier
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Magnetically Controlled Electronic Transport Properties of a Ferromagnetic Junction on the Surface of a Topological Insulator
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作者 刘正钦 王瑞强 +1 位作者 邓明勋 胡梁宾 《Communications in Theoretical Physics》 SCIE CAS CSCD 2015年第6期777-782,共6页
We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topologicM insulator. The current-voltage characteristic curve and the tunneling ... We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topologicM insulator. The current-voltage characteristic curve and the tunneling conductance are calculated theoretically. Two interesting transport features are predicted: observable negative differential conductances and linear conductances tunable from unit to nearly zero. These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization. Our results may contribute to the development of high-speed switching and functional applications or electricalIy controlled magnetization switching. 展开更多
关键词 topological insulator electronic transport negative differential conductance magnetic switch
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正常金属调制层对超导隧道结微分电导的影响
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作者 李红 杨渭 +2 位作者 杨新建 秦明辉 徐一红 《中国石油大学学报(自然科学版)》 EI CAS CSCD 北大核心 2007年第2期143-147,共5页
在考虑绝缘层厚度的基础上,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算了含有正常金属调制层的铁磁金属/绝缘层/正常金属/s波超导隧道结(FINS结)中的准粒子输运系数和微分电导。计算结果表明,微... 在考虑绝缘层厚度的基础上,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算了含有正常金属调制层的铁磁金属/绝缘层/正常金属/s波超导隧道结(FINS结)中的准粒子输运系数和微分电导。计算结果表明,微分电导随正常金属调制层厚度的变化呈周期性振荡,振荡周期与外加偏压有关;当金属调制层厚度较薄时,邻近效应将导致在金属层中有铁磁性和超导性共存的可能性。 展开更多
关键词 FINS结 方势垒 交换能 微分电导 邻近效应
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