In recent years,topological quantum materials(TQMs)have attracted intensive attention in the area of condensed matter physics due to their novel topologies and their promising applications in quantum computing,spin el...In recent years,topological quantum materials(TQMs)have attracted intensive attention in the area of condensed matter physics due to their novel topologies and their promising applications in quantum computing,spin electronics and next-generation integrated circuits.Scanning tunneling microscopy/spectroscopy(STM/STS)is regarded as a powerful technique to characterize the local density of states with atomic resolution,which is ideally suited to the measurement of the bulk-boundary correspondence of TQMs.In this review,using STM/STS,we focus on recent research on bismuth-based TQMs,including quantum-spin Hall insulators,3D weak topological insulators(TIs),high-order TIs,topological Dirac semi-metals and dual TIs.Efficient methods for the modulation of the topological properties of the TQMs are introduced,such as interlayer interaction,thickness variation and local electric field perturbation.Finally,the challenges and prospects for this field of study are discussed.展开更多
基金supported by the Beijing Municipal Natural Science Foundation(Grant No.Z180007)the National Natural Science Foundation of China(Grant Nos.11874003,11904015 and 52073006)the Australian Research Council(ARC)(LP180100722).
文摘In recent years,topological quantum materials(TQMs)have attracted intensive attention in the area of condensed matter physics due to their novel topologies and their promising applications in quantum computing,spin electronics and next-generation integrated circuits.Scanning tunneling microscopy/spectroscopy(STM/STS)is regarded as a powerful technique to characterize the local density of states with atomic resolution,which is ideally suited to the measurement of the bulk-boundary correspondence of TQMs.In this review,using STM/STS,we focus on recent research on bismuth-based TQMs,including quantum-spin Hall insulators,3D weak topological insulators(TIs),high-order TIs,topological Dirac semi-metals and dual TIs.Efficient methods for the modulation of the topological properties of the TQMs are introduced,such as interlayer interaction,thickness variation and local electric field perturbation.Finally,the challenges and prospects for this field of study are discussed.
