Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices

Doping of semiconductors,i.e.,accurately modulating the charge carrier type and concentration in a controllable manner,is a key technology foundation for modern electronics and optoelectronics.However,the conventional doping technologies widely utilized in silicon industry,such as ion implantation and thermal diffusion,always fail when applied to two-dimensional(2D)materials with atomically-thin nature.Surface charge transfer doping(SCTD)is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials,in particular 2D semiconductors.Herein,we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices.The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced.Its impact on tuning the fundamental properties of various 2D systems is highlighted.We particularly emphasize on the SCTD-enabled high-performance 2D functional devices.Finally,the challenges and opportunities for the future development of SCTD are discussed.

Surface charge transfer doping of graphene using a strong molecular dopant CN6-CP

Surface charge transfer doping of graphene plays an important role in graphene-based electronics due to its simplicity,high doping efficiency,and easy-controllability.Here,we demonstrate the effective surface charge transfer hole doping of graphene by using a strong p-type molecular dopant hexacyanotrimethylene-cyclopropane (CN6-CP).The CN6-CP exhibits a very high intrinsic work function of 6.37 e V,which facilitates remarkable electron transfer from graphene to CN6-CP as revealed by in situ photoelectron spectroscopy investigations.Consequently,hole accumulation appears in the graphene layer at the direct contact with CN6-CP.As evidenced by Hall effect measurements,the areal hole density of graphene significantly increased from 8.3×10^(12)cm^(-2) to 2.21×10^(13)cm^(-2) upon 6 nm CN6-CP evaporation.The CN6-CP acceptor with strong p-doping effect has great implications for both graphene-based and organic electronics.

Frequency Up-conversion Luminescence Properties and Mechanism of Tm^(3+) /Er^(3+)/Yb^(3+) Co-doped Oxyfluorogermanate Glasses

Oxyfluoride glasses were developed with composition 60GeO 2 ·10AlF 3 ·25BaF 2 ·（1.95-x）GdF 3 · 3YbF 3 ·0.05TmF 3 ·xErF 3 （x=0.02,0.05,0.08,0.11,0.14,0.17）in mole percent.Intense blue（476 nm）,green（524 and 546 nm）and red（658 nm）emissions which identified from the 1G 4 →3H 6 transition of Tm3＋and the（2H 11/2 ,4S 3/2 ）→4I 15/2 ,4F 9/2 →4I 15/2 transitions of Er3＋,respectively,were simultaneously observed under 980 nm excitation at room temperature.The results show that multicolor luminescence including white light can be adjustably tuned by changing doping concentrations of Er3＋ion or the excitation power.In addition,the energy transfer processes among Tm3＋,Er3＋and Yb3＋ions,and up-conversion mechanisms are discussed.

Thickness-dependent enhanced optoelectronic performance of surface charge transfer-doped ReS2 photodetectors

Surface charge transfer doping has been widely utilized to tune the electronic and optical properties of semiconductor photodetectors based on low-dimensional materials.Although many studies have been conducted on the performance(response time,responsivity,etc.)of doped photodetectors and their mechanisms,they merely examined a specific thickness and did not systematically explore the dependence of doping effects on the number of layers.This work performs a series of investigations on ReS_(2)photodetectors with different numbers of layers and demonstrates that the p-dopant tetrafluorotetracyanoquinodimethane(F_(4)-TCNQ)converts the deep trap states into recombination centers for few-layer ReS_(2)and induces a vertical p-n junction for thicker ReS_(2).A response time of 200 ms is observed in the decorated 2-layer ReS_(2)photodetector,more than two orders of magnitude faster than the response of the pristine photodetector,due to the disappearance of deep trap states.A current rectification ratio of 30 in the F_(4)-TCNQ-decorated sandwiched ReS_(2)device demonstrates the formation of a vertical p-n junction in a thicker ReS_(2)device.The responsivity is as high as 2,000 A/W owing to the strong carrier separation of the p-n junction.Different thicknesses of ReS_(2)enable switching of the prominent operating mechanism between transforming deep trap states into recombination centers and forming a vertical p-n junction.The thicknessdependent doping effect of a two-dimensional material serves as a new mechanism and provides a scheme toward improving the performance of other semiconductor devices,especially optical and electronic devices based on low-dimensional materials.

Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate

The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan- nel is introduced to provide an ascending electrical potential gradient in the transfer transistor channel. With the adjustments to the overlap length between the R1 region and the transfer gate, the doping dose of the R1 region, and the overlap length between the anti-punch-through （APT） implantations and transfer gate, the potential barrier and potential pocket in the connecting region of transfer transistor channel and the pinned photodiode （PPD） are reduced to improve the electrical potential connection. The simulation results show that the percentage of residual charges to total charges drops from 1/10^4 to 1/10^7, and the transfer time is reduced from 500 to 110 ns. This means the charge transfer efficiency is improved.

Significantly enhanced of tungsten diselenide functionalization optoelectronic performance phototransistor via surface

Two-dimensional （2D） layered transition metal dichalcogenides （TMDs） have attracted enormous research interests and efforts towards the development of versatile electronic and optical devices, owing to their extraordinary and unique fundamental properties and remarkable prospects in nanoelectronic applications. Among the TMDs, tungsten diselenide （WSe2） exhibits tunable ambipolar transport characteristics and superior optical properties such as high quantum efficiency. Herein, we demonstrate significant enhancement in the device performance of WSe2 phototransistor by in situ surface functionalization with cesium carbonate （Cs2CO3）. WSe2 was found to be strongly doped with electrons after Cs2CO3 modification. The electron mobility of WSe2 increased by almost one order of magnitude after surface functionalization with 1.6-nm-thick Cs2CO3 decoration. Furthermore, the photocurrent of the WSe2-based phototransistor increased by nearly three orders of magnitude with the deposition of 1.6-nm-thick Cs2CO3. Characterizations by in situ photoelectron spectroscopy techniques confirmed the significant surface charge transfer occurring at the Cs2COB/WSe2 interface. Our findings coupled with the tunable nature of the surface transfer doping method establish WSe2 as a promising candidate for future 2D materials- based optoelectronic devices.

Research on the hydrogen terminated single crystal diamond MOSFET with MoO_3 dielectric and gold gate metal

The single crystal diamond with maximum width about 10 mm has been grown by using microwave plasma chemical vapor deposition equipment. The quality of the grown diamond was characterized using an X-ray diffractometer. The FWHM of the（004） rocking curve is 37.91 arcsec, which is comparable to the result of the electronic grade single crystal diamond commercially obtained from Element Six Ltd. The hydrogen terminated diamond field effect transistors with Au/Mo03 gates were fabricated based on our CVD diamond and the characteristics of the device were compared with the prototype Al/MoO3 gate. The device with the Au/MoO3 gate shows lower on-resistance and higher gate leakage current. The detailed analysis indicates the presence of aluminum oxide at the Al/MoO3 interface, which has been directly demonstrated by characterizing the interface between A1 and MoO3 by X-ray photoelectron spectroscopy. In addition, there should be a surface transfer doping effect of the MoO3 layer on H-diamond even with the atmospheric-adsorbate induced 2 DHG preserved after MoO3 deposition.