Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect

Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models：（i） single electron and（ii） the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.

Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

We present first-principle calculations of electric and thermo spin transfer torques （STT） in Fe/Vacuum（Vac）/Fe magnetic tunnel junctions （MTJs）. Our quantitative studies demonstrate rich bias dependence of STT and tunnel inagneto resistance （TMR） behaviors with respect to the interface roughness. Thermoelectric effects in Fe/Vac/Fe MTJs is remarkable. We observe larger ZT of 6.2 in 8 ML clean Vacuum barrier, where responsible for. Thermo-STT in Fe/Vac/Fe with similar barrier thickness. the heavily restraitmd thermal conductance should be MTJs show same order as that in Fe/MgO/Fe MTJs with similar barrier thickness.

Thermal spin transfer torque in Fe｜Ag｜YIG multilayers

We investigated the thermal spin transfer effect in FM｜NM｜YIG multilayers using the first princi- ples scattering theory. At room temperature, the spin Seebeck torque TZSE -1.0 μJ/（K-m^2） in an Ag＋｜Fe｜Ag｜YIG multilayer, which is around 40% larger than that estimated from mixing conductance. The quantum effects such as interlayer exchange coupling between FM and YIG could be responsible for the enhancements. Based on the LLG equation, reverse the magnetic configurations, circularly, in a we predict that a temperature bias of -10 K can multilayer at room temperature.

Multi-segmented nanowires for vortex magnetic domain wall racetrack memory

A vortex domain wall's(VW) magnetic racetrack memory's high performance depends on VW structural stability,high speed, low power consumption and high storage density. In this study, these critical parameters were investigated in magnetic multi-segmented nanowires using micromagnetic simulation. Thus, an offset magnetic nanowire with a junction at the center was proposed for this purpose. This junction was implemented by shifting one portion of the magnetic nanowire horizontally in the x-direction(l) and vertically(d) in the y-direction. The VW structure became stable by manipulating magnetic properties, such as magnetic saturation(M_(4)) and magnetic anisotropy energy(K_(u)). In this case, increasing the values of M_(4) ≥ 800 kA/m keeps the VW structure stable during its dynamics and pinning and depinning in offset nanowires,which contributes to maintenance of the storage memory's lifetime for a longer period. It was also found that the VW moved with a speed of 500 m/s, which is desirable for VW racetrack memory devices. Moreover, it was revealed that the VW velocity could be controlled by adjusting the offset area dimensions(l and d), which helps to drive the VW by using low current densities and reducing the thermal-magnetic spin fluctuations. Further, the depinning current density of the VW(J_(d)) over the offset area increases as d increases and l decreases. In addition, magnetic properties, such as the M_(4) and K_(u),can affect the depinning process of the VW through the offset area. For high storage density, magnetic nanowires(multisegmented) with four junctions were designed. In total, six states were found with high VW stability, which means three bits per cell. Herein, we observed that the depinning current density(J_(d)) for moving the VW from one state to another was highly influenced by the offset area geometry(l and d) and the material's magnetic properties, such as the M_(4) and K_(u).

Symmetry ensemble theory of the spin wave emitting effect driven by current in nanoscale magnetic multilayers

This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves, in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble. The magnetization dynamics equation of the ensemble was developed. By analytically investigating the equation, many magnetization dynamics properties excited by polarized current reported in experiments, such as double spin wave modes and the abrupt frequency jump, can be successfully explained. It is pointed out that an external field is not necessary for spin wave emitting （SWE） and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field.

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

Spin transport in a Zigzag normal/ferromagnetic graphene junction

We study magnetic proximity effect induced low-energy spin transport in the normal/ferromagnetic junction of a semi-infinite zigzag graphene nanoribbon. Due to the absence of a spin flip in a single interface, the spin transfer in this model can be described by the ＂two-spin channel＂ model. We identify each spin channel as either a perfect conducting or a non-conducting channel. This feature leads to spin filter in symmetric zigzag graphene nanoribbon and spin precession in antisymmetric zigzag graphene nanoribbon, and helps to directly determine the exchange-splitting intensity directly, even without an external auxiliary bias.

Voltage control of magnetization switching and dynamics

The voltage controlled magnetic switching effect is verified experimentally. The Landau–Lifshitz–Gilbert（LLG）equation is used to study the voltage controlled magnetic switching. It is found that the initial values of magnetic moment components are critical for the switching effect, which should satisfy a definite condition. The external magnetic field which affects only the oscillation period should be comparable to the internal magnetic field. If the external magnetic field is too small, the switching effect will disappear. The precessions of mx and my are the best for the tilt angle of the external magnetic field θt = 0？, i.e., the field is perpendicular to the sample plane.

Ballistic current induced effective force on magnetic domain wall

The collective dynamics of magnetic domain wall under electric current is studied in the form of spin transfer torque(STT). The out-of-plane STT induced effective force is obtained based on the Landau-Lifshitz-Gilbert(LLG) equation including microscopic STT terms. The relation between microscopic calculations and collective description of the domain wall motion is established. With our numerical calculations based on tight binding free electron model, we find that the non adiabatic out-of-plane torque components have considerable non-local properties. It turns out that the calculated effective forces decay significantly with increasing domain wall widths.

Control of spins in a nano-sized magnet using electric-current

With the development of spintronics,spin-transfer torque control of magnetic properties receives considerable attention.In this paper the Landau-Lifshitz-Gilbert equation including the torque term is used to investigate the magnetic moment dynamics in the free layer of the ferromagnet/non-magnetic/ferromagnet（FM1/N/FM2） structures.It is found that the reverse critical time τ_c decreases with the current increasing.The critical time τ_c as a function of current for the perpendicular and parallel easy magnetic axes are the same.The critical time τ_c increases with the damping factor α increasing.In the case of large current the influence of the damping factor α is smaller,but in the case of little torque the critical time τ_c increases greatly with the damping increasing.The direction of the magnetization in the fixed layer influences the critical time,when the angle between the magnetization and the z direction changes from 0.1π to 0.4π,the critical time τ_c decreases from 26.7 to 15.6.

Mechanism of hydro-viscous soft start of belt conveyor

The mechanism of a hydro-viscous soft start is of great importance in the design of a hydro-viscous clutch and its control system. To explain the mechanism of a hydro-viscous soft start, the startup process of a belt conveyor was numerically analyzed with the modified Reynolds equation, an energy equation and a temperature-viscosity equation. The effect of temperature and grooves of the friction disk surface on torque transfer and load capacity of the oil film have also been analyzed. The results show that 1) the grooves are the basis of forming dynamic pressure but they may reduce the capacity of torque transfer to a certain extent, 2) during the startup process, temperature has little effect on torque transfer and load capacity and the variation in load capacity of the oil film is very small, indicating that it is preferable to use the flow rate as a control object than the pressure of the feed cylinder. The results have been verified by an experiment.

MgO(001) barrier based magnetic tunnel junctions and their device applications

Spintronics has received a great attention and significant interest within the past decades,and provided considerable and remarked applications in industry and electronic information etc.In spintronics,the MgO based magnetic tunnel junction(MTJ) is an important research advancement because of its physical properties and excellent performance,such as the high TMR ratio in MgO based MTJs.We present an overview of more than a decade development in MgO based MTJs.The review contains three main sections.(1) Research of several types of MgO based MTJs,including single-crystal MgO barrier based-MTJs,double barrier MTJs,MgO based MTJs with interlayer,novel electrode material MTJs based on MgO,novel barrier based MTJs,novel barrier MTJs based on MgO,and perpendicular MTJs.(2) Some typical physical effects in MgO based MTJs,which include six observed physical effects in MgO based MTJs,namely spin transfer torque(STT) effect,Coulomb blockade magnetoresistance(CBMR) effect,oscillatory magnetoresistance,quantum-well resonance tunneling effect,electric field assisted magnetization switching effect,and spincaloric effect.(3) In the last section,a brief introduction of some important device applications of MgO based MTJs,such as GMR & TMR read heads and magneto-sensitive sensors,both field and current switching MRAM,spin nano oscillators,and spin logic devices,have been provided.

Spin manipulations through electrical and thermoelectrical transport in magnetic tunnel junctions

A brief review is presented,which includes the direct current,alternate current,electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction(MTJ),ferromagnet(FM)-quantum dot(QD)/FM-FM,double barrier MTJ,FM-marginal Fermi liquid-FM,FM-unconventional superconductor-FM(FUSF),quantum ring and optical spin-field-effect transistor.The magnetoresistances in those structures,spin accumulation effect in FM-QD-FM and FUSF systems,spin injection and spin filter into semiconductor,spin transfer effect,photon-assisted spin transport,magnonassisted tunneling,electron-electron interaction effect on spin transport,laser-controlled spin dynamics,and thermoelectrical spin transport are discussed.

Simulation study of new 3-terminal devices for high speed STT-RAM

To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation.The best switching speed of the new structures is 120%faster than that of the rectangular 3-terminal device.The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.

Magnetization switching modes in nanopillar spin valve under the external field

The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization reversal.The first mode occurs at lower current density,which is realized by the formation of the reversal nucleus and domain wall motion;while the second mode occurs through complete magnetization reversal at higher current density.Furthermore,the switching time reduces as the spin-polarized current density increases,which can also be grouped into two reversal modes.

Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

We have investigated the performance of a spin transfer torque random access memory （STT-RAM） cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density （to switch the magnetization of the free layer of the STT RAM cell） is reduced.

A seventh-order model for dynamic response of an electro-hydraulic servo valve

In this paper, taking two degrees of freedom on the armature–flapper assembly into account, a seventh-order model is deduced and proposed for the dynamic response of a two-stage electro-hydraulic servo valve from nonlinear equations. These deductions are based on fundamental laws of electromagnetism, fluid, and general mechanics. The coefficients of the proposed seventhorder model are derived in terms of servo valve physical parameters and fluid properties explicitly.For validating the results of the proposed model, an AMESim simulation model based on physical laws and the existing low-order models validated by other researchers through experiments are used to compare with the seventh-order model. The results show that the seventh-order model can reflect the physical behavior of the servo valve more explicitly than the existing low-order models and it could provide guidance more easily for a linear control design approach and sensitivity analysis than the AMESim simulation model.