This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the t...This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.展开更多
Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics...Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures.展开更多
In the field of high-speed circuits, the analysis of mixed circuit networks containing both distributed parameter elements and lumped parameter elements becomes ever important. This paper presents a new method for ana...In the field of high-speed circuits, the analysis of mixed circuit networks containing both distributed parameter elements and lumped parameter elements becomes ever important. This paper presents a new method for analyzing mixed circuit networks. It adds transmission line end currents to the circuit variables of the classical modified nodal approach and can be applied directly to the mixed circuit networks. We also introduce a frequency-domain technique without requiring decoupling for multiconductor transmission lines. The two methods are combined together to efficiently analyze high-speed circuit networks containing uniform,nonuniform,and frequency-dependent transmission lines. Numerical experiment is presented and the results are compared with that computed by PSPICE.展开更多
In scaled CMOS processes, the single-event effects generate missing output pulses in Delay-Locked Loop (DLL). Due to its effective sequence detection of the missing pulses in the proposed Error Correction Circuit (ECC...In scaled CMOS processes, the single-event effects generate missing output pulses in Delay-Locked Loop (DLL). Due to its effective sequence detection of the missing pulses in the proposed Error Correction Circuit (ECC) and its portability to be applied to any DLL type, the ECC mitigates the impact of single-event effects and completes its operation with less design complexity without any concern about losing the information. The ECC has been implemented in 180 nm CMOS process and measured the accuracy of mitigation on simulations at LETs up to 100 MeV-cm<sup>2</sup>/mg. The robustness and portability of the mitigation technique are validated through the results obtained by implementing proposed ECC in XilinxArtix 7 FPGA.展开更多
Hybrid circuit breaker （HCB） technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum ...Hybrid circuit breaker （HCB） technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum interrupter has an excellent ability to deal with the steep rising part of the transient recovery voltage （TRV）, while the SF6 interrupter can withstand the peak part of the voltage easily. An HCB can take advantage of the interrupters in the current interruption process. In this study, an HCB model based on the vacuum ion diffusion equations, ion density equation, and modified Cassie-Mayr arc equation is explored. A simulation platform is constructed by using a set of software called the alternative transient program （ATP）. An HCB prototype is also designed, and the short circuit current is interrupted by the HCB under different action sequences of contacts. The voltage distribution of the HCB is analyzed through simulations and tests. The results demonstrate that if the vacuum interrupter withstands the initial TRV and interrupts the post-arc current first, then the recovery speed of the dielectric strength of the SF6 interrupter will be fast. The voltage distribution between two interrupters is determined by their post-arc resistance, which happens after current-zero, and subsequently, it is determined by the capacitive impedance after the post-arc current decays to zero.展开更多
为了合理评估高比例新能源并网的多馈入高压直流输电(multi-infeed HVDC,MIDC)系统电压支撑能力,该文首先分析MIDC系统结构特点,随后基于多馈入短路比(multi-infeed short circuit ratio,MISCR)指标,并结合新能源短路电流幅值和相位随...为了合理评估高比例新能源并网的多馈入高压直流输电(multi-infeed HVDC,MIDC)系统电压支撑能力,该文首先分析MIDC系统结构特点,随后基于多馈入短路比(multi-infeed short circuit ratio,MISCR)指标,并结合新能源短路电流幅值和相位随机端电压变化的特性(以下简称“幅相特性”),提出多馈入暂态短路比(multi-infeed transient short circuit ratio,MITSCR)指标;其次,根据国家标准的要求分析以双馈风机(doubly-fed induction generator,DFIG)为代表的新能源在不同控制模式下的幅相特性,并通过MITSCR指标分析DFIG接入对MIDC系统节点电压支撑能力影响;最后,利用PSACD/EMTDC软件进行时域仿真分析,结果表明,MITSCR指标能有效表征节点的电压支撑能力,验证了该指标的有效性与优越性。展开更多
基金Supported by the National Native Science Foundation of China
文摘This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.
文摘Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures.
文摘In the field of high-speed circuits, the analysis of mixed circuit networks containing both distributed parameter elements and lumped parameter elements becomes ever important. This paper presents a new method for analyzing mixed circuit networks. It adds transmission line end currents to the circuit variables of the classical modified nodal approach and can be applied directly to the mixed circuit networks. We also introduce a frequency-domain technique without requiring decoupling for multiconductor transmission lines. The two methods are combined together to efficiently analyze high-speed circuit networks containing uniform,nonuniform,and frequency-dependent transmission lines. Numerical experiment is presented and the results are compared with that computed by PSPICE.
文摘In scaled CMOS processes, the single-event effects generate missing output pulses in Delay-Locked Loop (DLL). Due to its effective sequence detection of the missing pulses in the proposed Error Correction Circuit (ECC) and its portability to be applied to any DLL type, the ECC mitigates the impact of single-event effects and completes its operation with less design complexity without any concern about losing the information. The ECC has been implemented in 180 nm CMOS process and measured the accuracy of mitigation on simulations at LETs up to 100 MeV-cm<sup>2</sup>/mg. The robustness and portability of the mitigation technique are validated through the results obtained by implementing proposed ECC in XilinxArtix 7 FPGA.
基金supported in part by National Natural Science Foundation of China(No.50977004)Key Projects in the National Science and Technology Pillar Program during the Eleventh Five-year Plan Period.Research of China(2009BAA19B03,2009BAA19B05)+1 种基金Fok Ying Tung Education Foundation(No.131057)New Century Excellent Talents in University of China(No.NCET-10-0282)
文摘Hybrid circuit breaker （HCB） technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum interrupter has an excellent ability to deal with the steep rising part of the transient recovery voltage （TRV）, while the SF6 interrupter can withstand the peak part of the voltage easily. An HCB can take advantage of the interrupters in the current interruption process. In this study, an HCB model based on the vacuum ion diffusion equations, ion density equation, and modified Cassie-Mayr arc equation is explored. A simulation platform is constructed by using a set of software called the alternative transient program （ATP）. An HCB prototype is also designed, and the short circuit current is interrupted by the HCB under different action sequences of contacts. The voltage distribution of the HCB is analyzed through simulations and tests. The results demonstrate that if the vacuum interrupter withstands the initial TRV and interrupts the post-arc current first, then the recovery speed of the dielectric strength of the SF6 interrupter will be fast. The voltage distribution between two interrupters is determined by their post-arc resistance, which happens after current-zero, and subsequently, it is determined by the capacitive impedance after the post-arc current decays to zero.
