Study on the transient radiation for apertures excited by rectangle pulse

The analytic representation of the transient radiation for an aperture excited by a rectangle pulse is obtained. It shows that the field duration and amplitude depend on the observation distance, the elevation angle, the pulse width of the rectangle pulse and the aperture size.

Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

An experimental system is developed for the transient radiation effects testing of an anti-radiation hardened processor. Based on this system, the transient radiation effects in a microprocessor based on SPARC-V8 architecture was investigated. The dose-rate-soft-error index parameters of the processor were determined according to the test results, as were the influences on the function and timing parameters of the processor. The power supply balance is affected, which caused the system to reset and be the main source of soft errors. The results showed the circuit recovery time is primarily determined by the internal PLL, while the core power and the output-low-IO ports are more sensitive to the transient dose rate effect. The power-integrity-hardened design is proposed to mitigate the transient radiation effect.

Development of Transient Electric Field Radiation Simulation Device during Gas Insulation Switch Operation

In gas insulation switch(GIS)substation,secondary devices such as linemonitoring devices are placed in the switching field,and these electronic devices are vulnerable to transient electromagnetic interference caused by switching operation.In order to facilitate the measurement and research of electromagnetic disturbance data under different working conditions,a simulation test device is developed in this paper,which can be used to simulate electromagnetic disturbance of GIS substation sensor and secondary device port under switch operation.A four-channel parallel gas switch was designed,and the main characteristic parameters of electromagnetic disturbance generated by the simulation device were measured by using high-frequency pulse power supply as the excitation source.The comparison between the measured waveform and the measured disturbance characteristic parameters of GIS substation shows that it is in good agreement with the measured waveform characteristics,conforms to the basic characteristics of damped oscillation wave,and can be used in the secondary equipment port disturbance voltage coupling characteristics,protection measures evaluation and assessment method research.

Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation

This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.