双层结构对ZnO TFT稳定性的影响

室温下采用射频磁控溅射方法在SiO_(2)/Si衬底上沉积了单层ZnO薄膜和高氧/低氧双层ZnO薄膜,采用电子束蒸发设备蒸镀Al电极,制备单沟道ZnO TFTs和双层沟道ZnO TFTs。比较两种结构ZnO TFTs的各种性能参数,分析双层结构对TFTs产生的影响。实验结果表明,底部高含氧量ZnO层和顶部低含氧量ZnO层构成了DAL同质结且高氧/低氧薄膜存在载流子浓度产差,利用载流子从高浓度向低浓度扩散的性质,可以填补栅介电层和沟道层之间的界面态缺陷,使器件界面类受主陷阱减少,有效降低TFTs的滞回现象。与单有源层TFTs相比,双沟道层TFTs还具有电学调制作用,其电学性能和稳定性均有明显的提高,得到最佳TFTs的开/关电流比达到3.44×10^(9),亚阈值摆幅为0.68 V/dec,阈值电压偏移为1.2 V。

湿法刻蚀条件对TFT中Cu电极坡度角和均一性的影响及工艺参数优化

目的 在高世代薄膜晶体管(Thin Film Transistor,TFT)产线的栅极刻蚀制程,明确大气压等离子体(Atmosphere Pressure Plasma,APP)清洗功率、清洗时间及刻蚀时间对刻蚀性能(关键尺寸偏差、均一性、坡度角)的影响规律,并获得最佳工艺条件,进而提升良率。方法 以APP清洗功率、清洗时间和刻蚀时间为影响因素,以关键尺寸偏差(CD Bias)、均一性、坡度角作为因变量,开展正交试验,明确因素影响重要性顺序;然后,对Cu电极坡度角的形成和刻蚀均一性变化进行分析;最后,采用回归分析获得刻蚀性能与刻蚀时间的函数关系式。结果 结果表明:刻蚀时间对刻蚀性能的影响最大,对APP清洁时间和功率的影响较小。刻蚀时间延长,关键尺寸偏差(CD Bias)增加、均一性变差、坡度角变大。为改善均一性和平缓坡度角,应缩短刻蚀时间。最佳工艺组合为:刻蚀时间85 s,APP电压9 kV,APP传输速度5 400 r/min。结论 刻蚀时间延长,未被光刻胶覆盖的Cu膜层被完全刻蚀,形成台阶,该台阶使刻蚀液形成回流路径。沿着回流路径,刻蚀液浓度、温度逐渐下降,刻蚀均一性由此恶化,坡度角因此增加。采用回归分析得到的刻蚀性能与刻蚀时间的函数关系式,为预测刻蚀效果和优选刻蚀时间提供了依据。

不同宽长比的柔性LTPS TFT的电应力可靠性

为了研究不同宽长比的柔性低温多晶硅薄膜晶体管(LTPS TFT)的电应力可靠性,测试了器件的I-V特性,以表征器件在强电场直流应力下由于自热效应和热载流子效应带来的电学性能退化。通过瞬态电流法表征了器件在强电场直流应力下的时间常数谱,并对其产生的新陷阱进行定位,分析了产生陷阱的内在机理。结果表明,在相同的强电场直流应力下宽长比为3/2.5的器件,其电学参数变化最大,自热效应以及热载流子效应带来的影响也最大。自热效应导致器件性能退化的主要原因是较大的栅源电压导致Si/SiO2界面处和栅氧化层中的陷阱增多,而热载流子效应导致器件性能退化的主要原因则是由于较大的漏源电压使得漏极晶界陷阱态密度急剧升高。

调整彩色滤光膜的致密性和疏水性以减少TFT-LCD制造中的气体释放

TFT-LCD产业正朝着高效率、低成本的方向发展。在TFT-LCD制造过程中,发现不同的光刻胶需要不同的真空干燥时间。为了减少制造时间,提高面板成品率,有必要明确影响真空时间的因素。本文探讨了抽运时间与光刻胶材料性能的关系。发现光刻胶的热稳定性与抽运时间的关系可以忽略不计。光刻胶的致密性和疏水性与真空干燥时间密切相关。致密性和高疏水性可以有效避免水蒸气在制造过程中侵入和储存在光刻胶中,减少泵送次数。总的来说,这项工作可以为未来TFT-LCD工业新型光刻胶的开发提供一定的参考。

High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals

The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy conversion.Unfortunately,these semiconductors have almost poor charge transport properties,which range from∼10^(−4) cm^(2)·V^(−1)·s^(−1) to∼10^(−2) cm^(2)·V^(−1)·s^(−1).Vat orange 3,as one of these organic semiconductors,has great potential due to its highly conjugated structure.We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional(2D)growth on h-BN surfaces with thickness of 10–100 nm using physical vapor transport.Raman’s results confirm the stability of the chemical structure of Vat orange 3 during growth.Furthermore,by leveraging the structural advantages of 2D materials,an organic field-effect transistor with a 2D vdW vertical heterostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes,resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14 cm^(2)·V^(−1)·s^(−1).Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications.Furthermore,we showcase an approach that integrates organic semiconductors with 2D materials,aiming to offer new insights into the study of organic semiconductors.

Dynamic response of a thermal transistor to time-varying signals

Thermal transistor,the thermal analog of an electronic transistor,is one of the most important thermal devices for microscopic-scale heat manipulating.It is a three-terminal device,and the heat current flowing through two terminals can be largely controlled by the temperature of the third one.Dynamic response plays an important role in the application of electric devices and also thermal devices,which represents the devices’ability to treat fast varying inputs.In this paper,we systematically study two typical dynamic responses of a thermal transistor,i.e.,the response to a step-function input(a switching process)and the response to a square-wave input.The role of the length L of the control segment is carefully studied.It is revealed that when L is increased,the performance of the thermal transistor worsens badly.Both the relaxation time for the former process and the cutoff frequency for the latter one follow the power-law dependence on L quite well,which agrees with our analytical expectation.However,the detailed power exponents deviate from the expected values noticeably.This implies the violation of the conventional assumptions that we adopt.

One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units

Artificial neural networks(ANN) have been extensively researched due to their significant energy-saving benefits.Hardware implementations of ANN with dropout function would be able to avoid the overfitting problem. This letter reports a dropout neuronal unit(1R1T-DNU) based on one memristor–one electrolyte-gated transistor with an ultralow energy consumption of 25 p J/spike. A dropout neural network is constructed based on such a device and has been verified by MNIST dataset, demonstrating high recognition accuracies(> 90%) within a large range of dropout probabilities up to40%. The running time can be reduced by increasing dropout probability without a significant loss in accuracy. Our results indicate the great potential of introducing such 1R1T-DNUs in full-hardware neural networks to enhance energy efficiency and to solve the overfitting problem.

Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.

TFT-LCD液晶玻璃断面分析装置的设计与仿真

薄膜晶体管液晶显示器(TFT-LCD)液晶玻璃的大尺寸裁切断面无法使用显微镜采集图片,针对这个问题,设计了相应的玻璃断面分析装置,并应用Adams软件对该装置中的滑动螺旋机构进行仿真分析和结构优化。所设计的玻璃断面分析装置操作简单,可快速获取大尺寸玻璃边料断面缺陷图片,经优化改进后的滑动螺旋机构需添加的扭矩值比未优化前减小1倍。

TFT基板低功耗显示驱动方法研究

TFT的低功耗特性能够减少电子设备的能量消耗,从而达到节省能源、延长电池寿命、降低使用设备温度、提高显示质量的目的。因此,低功耗TFT在电子设备的设计和制造中具有十分重要的作用。TFT基板的结构有很多种类,通常可分为一般型、高温多晶硅型、低温多晶硅型、金属氧化物半导体型和柔性材料基板型。本文对现有的TFT基板显示器件的低功耗研究进行总结分析,主要包括两大方面:对TFT基板本身驱动进行优化;对TFT基板外设驱动进行优化。本文对两大方面的低功耗研究进行了综述,并对近年来国内外TFT低功耗方法研究进行详细介绍。根据所介绍的方法的特点与其尚未攻克的困境,对TFT基板显示设备低功耗驱动的未来发展进行了展望。

退火温度对溶液法制备IGZO-TFT器件性能影响

随着人们进入信息时代,半导体技术快速发展,对薄膜晶体管(Thin film transistor,简称TFT)的性能要求逐渐提高.IGZO由于具有较高的载流子迁移率、相对良好的均匀性等优势而受到广泛关注;而传统的真空技术制备薄膜晶体管,因制备工艺复杂、制备成本高等问题,在快速发展的信息时代逐渐显露出局限性,本文采用制备工艺更为简单的溶液法在Si/SiO_(2)基底上制备IGZO有源层薄膜,并测试不同退火温度(450℃,550℃,650℃)条件下对薄膜性能的影响.结果表明,适当提高退火温度可以有效改善IGZO-TFT器件的电学性能,本实验测试得出:当溶液法制备薄膜在550℃退火温度下退火器件性能最优,溶液法制备的器件电流开关闭达到105,器件性能相对比较稳定.

基于Swin Transformer轻量化的TFT-LCD面板缺陷分类算法

在TFT-LCD面板缺陷检测中,检测对象背景复杂、缺陷细微且种类繁多,而工业生产实时性要求高,传统的缺陷分类算法往往难以兼顾精度和速度要求,无法适用于实际生产应用。为均衡TFT-LCD面板缺陷分类的准确率和速率,提出一种基于Swin Transformer的轻量化深度学习图像分类模型。首先对模型每层输入的特征图进行Token融合以减少模型计算量,从而提高模型的轻量化水平。其次引入深度可分离卷积模块以帮助模型增加卷积归纳偏置,从而缓解模型对海量数据的依赖问题。最后使用知识蒸馏方法来克服模型轻量化导致的检测精度下降问题。在自制TFT-LCD面板缺陷分类数据集上的实验表明,本文提出的改进模型相比基线模型,FLOPs计算量降低了2.6 G,速度指标提升了17%,而Top-1 Acc精度仅损失1.3%,且与其他图像分类主流模型相比,在自制数据集和公开数据集上都具有更均衡的精度和速度。

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors:review and outlook

Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.

High-performance amorphous In–Ga–Zn–O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO_(2) heterojunction charge trapping stack

Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.

Advances in mobility enhancement of ITZO thin-film transistors:a review

Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.

TFT-LCD用黑色光刻胶材料对曝光过程Mark读取的影响

大尺寸薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display,TFT-LCD)显示器为节省黑色矩阵(Black Matrix,BM)制程降低面板成本,使用黑色膜柱(Black Photo Spacer,BPS)技术替代BM和PS(Photo Spacer)制程,同时为兼顾对组精度提升的需求,采用BOA(BPS on Array)技术,将BPS转移至阵列基板侧。原BM制程是第一道制作,而新的BPS制程则位于阵列最后一道制程。BPS曝光成型需使用阵列前制程的金属标(Metal Mark)进行精准对位,实现精细化图案。BPS的透过率低,致使CCD摄像机透过BPS抓取前制程的金属标进行对位非常困难。针对该技术难题,对曝光设备抓标的原理进行了分析,通过调整材料颜料组成,获取了不同透过率BPS材料。将不同透过率的BPS材料进行曝光成型,研究曝光对位过程对材料透过率的最低要求,同时遮光度尽可能大。实验结果表明,NSK曝光机对位灯源波长位于780~1000 nm红外区域,在该波段BPS材料透过率低于23%时会导致对位失败。通过使用有机-无机混合颜料组成取代有机混合颜料,在红外波段可获得接近90%的透过率,满足对位需求。同时固化成型后可获得1.2/μm光学密度,满足BPS产品遮光特性需求。以此制作的BPS面板光学指标满足产品规格。

高性能ZnSnO∶Li/ZnSnO双有源层TFT电学性能的研究

双有源层以迁移率高、开关比高、大面积均匀性好等优点成为近年研究热点。采用射频磁控溅射方法,制备了ZnSnO∶Li/ZnSnO薄膜晶体管(TFT),对其电学特性进行了测试,并研究了器件迁移率提高的原因及其内在的微观机制。研究发现,ZTO∶Li/ZTO TFT表现出了良好的电学特性,其场效应迁移为率为13.98 cm^(2)/(V·s),亚阈值摆幅为0.84 V/dec,开关比为1.13×10^(9)。通过XPS对其薄膜进行分析发现,Li的引入导致薄膜中氧和金属结合键的浓度增加,氧空位浓度减少,从而使得TFT的迁移率增大,开关比增大,亚阈值摆幅减小。

Mathematical analysis of organic-pass transistor using pseudo-p-OTFTs

Steady state behavior analysis of organic thin film transistor(OTFTs)has been thoroughly researched in the past few decades.Yet,this static logic analysis has drawbacks of high power dissipation and high power consumption,and a large number of prerequisites in the number of transistors for the digital logic circuit application.Hence,to overcome these basic fundamental drawbacks of static logic,the dynamic logic study of organic thin film transistor has been analyzed in this paper.The fundamental basic of dynamic logic is a pass transistor for which logic high and logic low model is designed at an operating voltage of 5 V and frequency of 5 kHz.Additionally,the novel approach of analytical model for organic pass transistor(OPT)circuit is included and verified using MATLAB.The transient individualities of organic pass transistor OPT are examined through Atlas 2-D numerical device simulator.The reduction in the power dissipation along with additional voltage scaling and reduction in the clock frequency such as pipelining may further enable the applications into more complex VLSI ICs.

一种带中控互联功能的7寸TFT屏组合仪表设计

本文主要介绍采用最新汽车电子技术,在7寸彩色TFT液晶屏平台上,通过采用CAN总线通信技术,开发出一款功能丰富、性能稳定、显示效果佳和人机交互体验良好的带中控互联功能显示的组合仪表。

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.