主要阐述了电荷泵技术在14 V HV MOS晶体管可靠性研究中的应用。使用了一种改进的电荷泵技术分析了经过热载流子加压后的器件特性。使用这种方法,我们可以精确描述器件损伤的位置和程度,以及可以精确评估由于HCI效应引起的界面缺陷的变...主要阐述了电荷泵技术在14 V HV MOS晶体管可靠性研究中的应用。使用了一种改进的电荷泵技术分析了经过热载流子加压后的器件特性。使用这种方法,我们可以精确描述器件损伤的位置和程度,以及可以精确评估由于HCI效应引起的界面缺陷的变化,为器件优化与工艺改进提供重要参考信息。展开更多
A diode-end-pumped electro-optic （EO） Q-switched Nd：YVO4 laser operating at repetition rate of 10 kpps （pulses per second） was reported. A block of La3Ga5SiO14 （LGS） single crystal was used as a Q-switch and th...A diode-end-pumped electro-optic （EO） Q-switched Nd：YVO4 laser operating at repetition rate of 10 kpps （pulses per second） was reported. A block of La3Ga5SiO14 （LGS） single crystal was used as a Q-switch and the driver was a metal oxide semiconductor field effect transistor （MOS-FET） pulser of high repetition rate and high voltage. At continuous wave （CW） operation, the slope efficiency of the laser was 46%, and maximum optical-to-optical efficiency was 38.5%. Using an output coupler with transmission of 70%, a 10-kpps Q-switched pulse train with 0.4-mJ monopulse energy and 8.2-ns pulse width was achieved, the optical conversion efficiency was around 15%, and the beam quality M^2 factor was less than 1.2.展开更多
文摘A diode-end-pumped electro-optic （EO） Q-switched Nd：YVO4 laser operating at repetition rate of 10 kpps （pulses per second） was reported. A block of La3Ga5SiO14 （LGS） single crystal was used as a Q-switch and the driver was a metal oxide semiconductor field effect transistor （MOS-FET） pulser of high repetition rate and high voltage. At continuous wave （CW） operation, the slope efficiency of the laser was 46%, and maximum optical-to-optical efficiency was 38.5%. Using an output coupler with transmission of 70%, a 10-kpps Q-switched pulse train with 0.4-mJ monopulse energy and 8.2-ns pulse width was achieved, the optical conversion efficiency was around 15%, and the beam quality M^2 factor was less than 1.2.
