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High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals
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作者 闫宁 熊志仁 +1 位作者 秦成兵 李小茜 《Chinese Physics Letters》 SCIE EI CAS CSCD 2024年第2期122-128,共7页
The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy conversi... The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy conversion.Unfortunately,these semiconductors have almost poor charge transport properties,which range from∼10^(−4) cm^(2)·V^(−1)·s^(−1) to∼10^(−2) cm^(2)·V^(−1)·s^(−1).Vat orange 3,as one of these organic semiconductors,has great potential due to its highly conjugated structure.We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional(2D)growth on h-BN surfaces with thickness of 10–100 nm using physical vapor transport.Raman’s results confirm the stability of the chemical structure of Vat orange 3 during growth.Furthermore,by leveraging the structural advantages of 2D materials,an organic field-effect transistor with a 2D vdW vertical heterostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes,resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14 cm^(2)·V^(−1)·s^(−1).Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications.Furthermore,we showcase an approach that integrates organic semiconductors with 2D materials,aiming to offer new insights into the study of organic semiconductors. 展开更多
关键词 TRANSISTOR ORANGE SEMICONDUCTORS
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Flexible Graphene Field‑Effect Transistors and Their Application in Flexible Biomedical Sensing
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作者 Mingyuan Sun Shuai Wang +5 位作者 Yanbo Liang Chao Wang Yunhong Zhang Hong Liu Yu Zhang Lin Han 《Nano-Micro Letters》 SCIE EI CAS 2025年第2期252-313,共62页
Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabricati... Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing. 展开更多
关键词 FLEXIBLE GRAPHENE Field-effect transistor Wearable IMPLANTABLE BIOSENSOR
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Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
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作者 Xiao Li Zhikang Ma +6 位作者 Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu 《Journal of Semiconductors》 EI CAS CSCD 2024年第10期54-59,共6页
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun... This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT. 展开更多
关键词 oxide semiconductor thin-film transistors two-dimensional electron gas HETEROJUNCTION high mobility
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Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors
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作者 张丽萍 孙宗耀 +1 位作者 李佳妮 苏俊燕 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第4期683-689,共7页
The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas w... The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions. 展开更多
关键词 graphene field-effect transistors external magnetic field radiation frequency instability increment
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Device design principles and bioelectronic applications for flexible organic electrochemical transistors
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作者 Lin Gao Mengge Wu +1 位作者 Xinge Yu Junsheng Yu 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2024年第1期126-153,共28页
Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. ... Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications. 展开更多
关键词 flexible organic electrochemical transistors wearable bioelectronics manufacturing approaches device physics neuromorphic applications
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Transient Response and Ionic Dynamics in Organic Electrochemical Transistors
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作者 Chao Zhao Jintao Yang Wei Ma 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第11期191-223,共33页
The rapid development of organic electrochemical transistors(OECTs)has ushered in a new era in organic electronics,distinguishing itself through its application in a variety of domains,from high-speed logic circuits t... The rapid development of organic electrochemical transistors(OECTs)has ushered in a new era in organic electronics,distinguishing itself through its application in a variety of domains,from high-speed logic circuits to sensitive biosensors,and neuromorphic devices like artificial synapses and organic electrochemical random-access memories.Despite recent strides in enhancing OECT performance,driven by the demand for superior transient response capabilities,a comprehensive understanding of the complex interplay between charge and ion transport,alongside electron–ion interactions,as well as the optimization strategies,remains elusive.This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses,emphasizing advancements in device physics and optimization approaches.We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications,as well as the impact of materials,morphology,device structure strategies on optimizing transient responses.This paper not only offers a detailed overview of the current state of the art,but also identifies promising avenues for future research,aiming to drive future performance advancements in diversified applications. 展开更多
关键词 Organic electrochemical transistors Transient response Ion dynamics Electronic dynamics Volatility and non-volatility
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Photo-driven fin field-effect transistors
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作者 Jintao Fu Chongqian Leng +4 位作者 Rui Ma Changbin Nie Feiying Sun Genglin Li Xingzhan Wei 《Opto-Electronic Science》 2024年第5期12-20,共9页
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only d... The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging.However,silicon,the cornerstone of modern microelectronics,can only detect light within a limited wavelength range(<1100 nm)due to its bandgap of 1.12 eV,which restricts its utility in the infrared detection realm.Herein,a photo-driven fin field-effect transistor is presented,which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection.This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting.The lead sulfide film wraps the silicon channel to form a“three-dimensional”infrared-sensitive gate,enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance.At room temperature,this device realizes a broadband photodetection from visible(635 nm)to short-wave infrared regions(2700 nm),surpassing the working range of the regular indium gallium arsenide and germanium detectors.Furthermore,it exhibits low equivalent noise powers of 3.2×10^(-12) W·Hz^(-1/2) and 2.3×10^(-11) W·Hz^(-1/2) under 1550 nm and 2700 nm illumination,respectively.These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection. 展开更多
关键词 PHOTODETECTION SILICON-ON-INSULATOR lead sulfide HETEROSTRUCTURE field-effect transistors
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Atomic layer deposition for nanoscale oxide semiconductor thin film transistors:review and outlook 被引量:4
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作者 Hye-Mi Kim Dong-Gyu Kim +2 位作者 Yoon-Seo Kim Minseok Kim Jin-Seong Park 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2023年第1期153-180,共28页
Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compos... Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors. 展开更多
关键词 atomic layer deposition(ALD) oxide semiconductor thin film transistor(TFT)
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Stretchable organic electrochemical transistors with micro-/nano-structures
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作者 Jianhua Chen Yiming Sun +2 位作者 Jie Sun Junqiao Ding Liming Ding 《Journal of Semiconductors》 EI CAS CSCD 2023年第12期1-3,共3页
Organic electrochemical transistors(OECTs)have attracted attention due to their unique function of converting ionic and biological signals into electronic signals,high transconductance,low energy consumption(below 1 V... Organic electrochemical transistors(OECTs)have attracted attention due to their unique function of converting ionic and biological signals into electronic signals,high transconductance,low energy consumption(below 1 V),stable operation in aqueous media,good biocompatibility[1,2].However,most OECTs are usually built on brittle and stiff substrates,and inappropriate to be adhered to or contacted with delicate human skin,thus impeding their use in wearable electronics.It is desirable to exploit stretchable OECTs to reduce the mechanical mismatch with soft tissues. 展开更多
关键词 transistors ELECTROCHEMICAL STIFF
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P-type cold-source field-effect transistors with TcX_(2) and ReX_(2)(X=S,Se)cold source electrodes:A computational study
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作者 汪倩文 武继璇 +2 位作者 詹学鹏 桑鹏鹏 陈杰智 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第12期54-60,共7页
Cold-source field-effect transistors(CS-FETs)have been developed to overcome the major challenge of power dissipation in modern integrated circuits.Cold metals suitable for n-type CS-FETs have been proposed as the ide... Cold-source field-effect transistors(CS-FETs)have been developed to overcome the major challenge of power dissipation in modern integrated circuits.Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing(SS).In this work,regarding the p-type CS-FETs,we propose TcX_(2) and ReX_(2)(X=S,Se)as the injection source to realize the sub-thermal switching for holes.First-principles calculations unveils the cold-metal characteristics of monolayer TcX_(2) and ReX_(2),possessing a sub-gap below the Fermi level and a decreasing DOS with energy.Quantum device simulations demonstrate that TcX_(2) and ReX_(2) can enable the cold source effects in WSe_(2) p-type FETs,achieving steep SS of 29-38 mV/dec and high on/off ratios of(2.3-5.6)×10^(7).Moreover,multilayer Re S2retains the cold metal characteristic,thus ensuring similar CS-FET performances to that of the monolayer source.This work underlines the significance of cold metals for the design of p-type CS-FETs. 展开更多
关键词 cold metal steep-slope transistor subthreshold swing quantum device simulations
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Homojunction structure amorphous oxide thin film transistors with ultra-high mobility
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作者 Rongkai Lu Siqin Li +8 位作者 Jianguo Lu Bojing Lu Ruqi Yang Yangdan Lu Wenyi Shao Yi Zhao Liping Zhu Fei Zhuge Zhizhen Ye 《Journal of Semiconductors》 EI CAS CSCD 2023年第5期19-26,共8页
Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficu... Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs. 展开更多
关键词 thin film transistors HOMOJUNCTION carrier mobility amorphous oxides
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A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors
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作者 芦宾 马鑫 +3 位作者 王大为 柴国强 董林鹏 苗渊浩 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第6期660-665,共6页
Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transi... Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure. 展开更多
关键词 tunneling field effect transistor relaxation time approximation non-quasi-static non-quasi-static
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications
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作者 潘霄宇 郭红霞 +4 位作者 冯亚辉 刘以农 张晋新 付军 喻国芳 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期535-544,共10页
We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is a... We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments. 展开更多
关键词 SiGe heterojunction bipolar transistors pulsed laser TCAD simulation single-event transient
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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer
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作者 牛雪锐 侯斌 +7 位作者 张濛 杨凌 武玫 张新创 贾富春 王冲 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第10期678-683,共6页
GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double ... GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone. 展开更多
关键词 GaN double-channel heterostructure field-effect transistors p-GaN insertion layer C-doped buffer layer
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Single-electron transport in H_(2)O@C_(60) single-molecule transistors
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作者 刘博文 陈俊 +3 位作者 欧阳一平 张敏昊 谭元植 宋凤麒 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第6期80-84,共5页
Single-molecule transistors(SMTs) based on fullerenes and their derivatives have been recognized as a long-sought platform for studying the single-electron transport properties.H_(2)O@C_(60) is a combination of fuller... Single-molecule transistors(SMTs) based on fullerenes and their derivatives have been recognized as a long-sought platform for studying the single-electron transport properties.H_(2)O@C_(60) is a combination of fullerene and H_(2)O,a typical light molecule.Here we use the 'molecular surgery' technique to synthesize the H_(2)O@C_(60) molecule and then construct the H_(2)O@C_(60) SMTs,together with the C_(60) SMTs.Evidences for single-electron transport have been obtained in our measurements,including explicit Coulomb blockade and Coulomb oscillations.We then calculate the detailed parameters of the H_(2)O@C_(60) and C_(60) SMTs using a capacitance model derived from the Coulomb diamond feature,which gives a capacitance ratio of 1:5.05:8.52 for the H_(2)O@C_(60) SMT and 1:29.5:74.8 for the C_(60) SMT.Moreover,the gate efficiency factor a turns out to be 0.0686 in the H_(2)O@C_(60) SMT,about ten times larger than that in the C_(60) SMT.We propose that the enhanced gate efficiency in H_(2)O@C_(60) SMT may be induced by the closer attachment of molecular orbital electron clouds to the gate substrate due to polarization effects of H_(2)O. 展开更多
关键词 single-molecule transistor fullerenes and their derivatives light molecule the polarization effect
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Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors
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作者 Yanxin Wang Jiye Li +4 位作者 Fayang Liu Dongxiang Luo Yunping Wang Shengdong Zhang Lei Lu 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期57-61,共5页
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w... As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs. 展开更多
关键词 amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors(TFTs) current stress self-heating(SH) FLUORINATION
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W-doped In_(2)O_(3) nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity
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作者 杨洋 傅传玉 +4 位作者 柯硕 崔航源 方晓 万昌锦 万青 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第11期604-608,共5页
Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. ... Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper,neuromorphic transistors with W-doped In_(2)O_(3)nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current(EPSC), long-term potentiation(LTP), and depression(LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse.At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5×5 nanofiber device array.Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity. 展开更多
关键词 W-doped In_(2)O_(3)nanofibers neuromorphic transistors optoelectronic synaptic plasticity
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Effect of spin on the instability of THz plasma waves in field-effect transistors under non-ideal boundary conditions
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作者 张丽萍 李佳妮 +1 位作者 冯江旭 苏俊燕 《Plasma Science and Technology》 SCIE EI CAS CSCD 2023年第12期24-30,共7页
Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and... Terahertz(THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors(FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance;the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions;the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology. 展开更多
关键词 the instability of THz plasma waves spin effects non-ideal boundary conditions quantum effects field-effect transistors
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Advances in mobility enhancement of ITZO thin-film transistors:a review
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作者 Feilian Chen Meng Zhang +3 位作者 Yunhao Wan Xindi Xu Man Wong Hoi-Sing Kwok 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期11-25,共15页
Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in impr... Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented. 展开更多
关键词 thin-film transistor(TFT) indium-tin-zinc oxide(ITZO)TFT MOBILITY active matrix(AM)displays
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0.2~2.0GHz100W超宽带GaN功率放大器 被引量:1
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作者 张晓帆 银军 +4 位作者 倪涛 余若祺 斛彦生 王辉 高永辉 《半导体技术》 CAS 北大核心 2024年第3期252-256,共5页
设计并实现了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的100 W超宽带功率放大器。基于SiC无源工艺设计了集成无源器件(IPD)输入预匹配电路芯片;设计了基于陶瓷基片的T型集成输出预匹配电路;基于建立的传输线变压器(TLT)的精确... 设计并实现了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的100 W超宽带功率放大器。基于SiC无源工艺设计了集成无源器件(IPD)输入预匹配电路芯片;设计了基于陶瓷基片的T型集成输出预匹配电路;基于建立的传输线变压器(TLT)的精确模型,设计了宽带阻抗变换器,在超宽频带内将50Ω的端口阻抗变换至约12.5Ω,再通过多节微带电路与预匹配后的GaN HEMT芯片实现阻抗匹配。最终,以较小的电路尺寸实现了功率放大器的超宽带性能指标。测试结果表明,功率放大器在0.2~2.0 GHz频带内,在漏极电压36 V、输入功率9 W、连续波的工作条件下,输出功率大于103 W,漏极效率大于50%,输入电压驻波比(VSWR)≤2.5。 展开更多
关键词 GaN高电子迁移率功率管(HEMT) 功率放大器 集成无源器件(IPD) 超宽带 传输线变压器(TLT)
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